Abstract: A cellulose acetate resin composition may include a cellulose acetate (A) having a total degree of acetyl substitution of 2.60 or less; a filler (B); and a plasticizer (C). The filler (B) may be selected from the group consisting of (b1) a predetermined inorganic compound, (b2) a predetermined metal salt, (b3) cellulose or hemicellulose, and (b4) wood flour. The plasticizer (C) may be selected from (c1) a glycerin ester-based plasticizer, (c2) an ether-based plasticizer, and (c3) a glycol ester-based plasticizer. A content of the component (A) may be from 45 to 90 mass %. A total content of the component (B) may be from 5 to 50 mass %. A total content of the component (C) may be from 5 to 35 mass %.

Abstract: A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Abstract: A light-emitting component includes: a substrate; multiple light-emitting elements provided on the substrate, each having a light-emitting area; and multiple thyristors which are provided on each of the light-emitting elements, which include gate layers, and which cause light to be emitted, or increase an amount of light emitted, from the light-emitting areas of the light-emitting elements by being in an ON state. The substrate absorbs light emitted from the thyristors and emits light not absorbed by the gate layers.

Abstract: A light emitting component includes: a substrate; a plural light emitting elements that are provided on the substrate and respectively have light emission regions; and a plural thyristors that are turned on to cause the light emission regions of the respective light emitting elements to emit light, or that increase amounts of emitted light of the light emission regions, in which the light emitting elements absorb light emitted from a corresponding thyristor among the plural thyristors.

Abstract: A semiconductor-laminated substrate includes: a substrate; and a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor, in which the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Abstract: A light-emitting component includes a substrate and a light-emitting element provided on the substrate and configured to emit light in a direction intersecting a surface of the substrate. The light-emitting element includes a thyristor having an opening through which light is emitted, and an inner surface of the opening is covered with a light shield that suppresses transmission of light.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Abstract: A light emitting element formed of a laminate having a current constriction layer includes: a semiconductor substrate; a light emitting portion having plural first recess portions having a depth reaching the current constriction layer, and a current constriction structure formed in the current constriction layer and having an oxidized region where the current constriction layer is oxidized and a non-oxidized region surrounded by the oxidized region; an electrode pad disposed between the light emitting portion and an outer edge portion of the semiconductor substrate; and a step portion disposed between the electrode pad and the light emitting portion and formed from an upper surface of the laminate to the current constriction layer, and the current constriction layer in a region surrounded by the step portion is the oxidized region except for the non-oxidized region.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Abstract: A light emitting element includes: a light emitting unit that has multiple semiconductor layers laminated, the light emitting unit having a length from a center of the light emitting unit to an end portion in a first direction shorter than a length from the center to an end portion in a second direction intersecting the first direction, in plan view; and a connection part that extends from the light emitting unit in the first direction and connects the light emitting unit to another semiconductor layer.

Abstract: A light emitting element includes: a substrate; a light emitting unit that is laminated on the substrate; and a thyristor that is laminated on the light emitting unit and performs setting so as to cause the light emitting unit to emit light or increase an amount of emitted light by being turned into an ON state, the thyristor having a low resistance layer with a resistance which does not electrically separate the thyristor at a position where a current flows from an electrode being in contact with the thyristor.

Abstract: A light emitter includes: a substrate; a driving section provided on the substrate; a light source that is provided on the substrate and is driven by the driving section; a cover section through which light emitted from the light source is transmitted and that is disposed in an optical axial direction of the light source; and a support section that is provided on a part of the substrate excluding a part between the driving section and the light source and supports the cover section.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltage output from the amplifier of each of the plurality of pixels to a digital value and output the digital value, a correction unit configured to correct the digital value output from the A/D converter so that an influence of a variation in a gain and an offset value among the plurality of pixels is curbed, a calculation unit configured to output a summed value obtained by summing the corrected digital values corresponding to at least two pixels, and a conversion unit configured to convert the summed value output from the calculation unit to a number of photons.

Abstract: A detection apparatus includes a light emitting unit including a first light emitting region that has at least one light emitting element and radiates light to a first radiation region and a second light emitting region that has at least one light emitting element and radiates light to a second radiation region, a drive unit that drives the light emitting unit, and a detection unit that detects an object based on a time until light radiated from the light emitting unit is reflected by the object and is received, in which the first radiation region is positioned outside with respect to the second radiation region, and an amount of light radiated from the first light emitting region is greater than an amount of light radiated from the second light emitting region.

Abstract: A light emitter includes: a substrate; a driving section provided on the substrate; a light source that is provided on the substrate and is driven by the driving section; a cover section through which light emitted from the light source is transmitted and that is disposed in an optical axial direction of the light source; and a support section that is provided on a part of the substrate excluding a part between the driving section and the light source and supports the cover section.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

Abstract: A light emitting device includes light emitting elements that are arranged on a front surface of a substrate and emit light, a first electrode that is connected to a first line controlling light emission of a light emitting element included in a first light emitting element group, and a second electrode that is connected to a second line controlling light emission of a light emitting element included in a second light emitting element group, in which the first line is provided through a space above the light emitting element of the second light emitting element group, and a position at which the first electrode is disposed with respect to a center of the light emitting element and a position at which the second electrode is disposed with respect to a center of the light emitting element are different from each other.