Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle ?1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°<?1?180°.

Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract: A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

Abstract: A method of manufacturing a low-phosphorus whey, the method including subjecting a raw whey liquid to a demineralization treatment using a nanofiltration method to obtain a low-chloride whey liquid in which the chloride content has been reduced to not more than 30 mmol per 100 g of solids, and passing the low-chloride whey liquid through an ion exchange resin to obtain an ion-exchanged whey liquid having a reduced phosphorus content, wherein the ion exchange resin is composed of an anion exchange resin, and at least an anion exchange resin in chloride form is used as the anion exchange resin. The method of manufacturing a low-phosphorus whey can reduce the phosphorus content within the whey while suppressing reduction in the calcium and magnesium content.

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract: A method of manufacturing a low-phosphorus whey, the method including subjecting a raw whey liquid to a demineralization treatment using a nanofiltration method to obtain a low-chloride whey liquid in which the chloride content has been reduced to not more than 30 mmol per 100 g of solids, and passing the low-chloride whey liquid through an ion exchange resin to obtain an ion-exchanged whey liquid having a reduced phosphorus content, wherein the ion exchange resin is composed of an anion exchange resin, and at least an anion exchange resin in chloride form is used as the anion exchange resin. The method of manufacturing a low-phosphorus whey can reduce the phosphorus content within the whey while suppressing reduction in the calcium and magnesium content.

Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle ?1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°<?1?180°.

Abstract: An owner code (service-recipient code) assigned to a package, which is an object to which a service is provided by transportation installations or facilities (i.e., shared service resource) including a pickup branch office 2, a first transit station 3, a second transit station 4 and a delivery transit station 5, is read at the transit stations 3, 4. An owner (recipient) designated by the service-recipient code is authorized with a control right which enables the owner to control a service (i.e., package delivery treatment performed in the transit stations 3, 4) provided by the shared service resource with respect to the package (service-provided object).

Abstract: A handy terminal allowing an object of interest such as a cargo to be efficiently searched utilizing an RFID tag is provided. A detection unit detects the distance and direction of an RFID tag attached to an object of search from a point for observing the distance and direction. A reading unit reads information on the external shape of the object of search written in a memory portion of the RFID tag. An image processing unit displays a three-dimensional graphic of the disposition of the RFID tag based on the distance and direction detected by the detection unit and compositely displaying a three-dimensional appearance image of the object of search estimated from the external shape information of the object of search read by the reading unit in the position where the three-dimensional graphic of the RFID tag is displayed.

Abstract: A handy terminal allowing an object of interest such as a cargo to be efficiently searched utilizing an RFID tag is provided. A detection unit detects the distance and direction of an RFID tag attached to an object of search from a point for observing the distance and direction. A reading unit reads information on the external shape of the object of search written in a memory portion of the RFID tag. An image processing unit displays a three-dimensional graphic of the disposition of the RFID tag based on the distance and direction detected by the detection unit and compositely displaying a three-dimensional appearance image of the object of search estimated from the external shape information of the object of search read by the reading unit in the position where the three-dimensional graphic of the RFID tag is displayed.

Abstract: A discharge lamp of the short arc type in which a lead pin, located within a hermetically sealed tube, is prevented from being irradiated with light. Such a construction prevents the lead pin from undergoing a temperature rise thereby preventing the destruction of the hermetically sealed tube. The discharge lamp of the short arc type includes an arc tube adjoined laterally by hermetically sealed tubes through which a lead pin, which supports an electrode, is routed. The hermetically sealed tubes are sealed by graded glass on the lead pins, and the lead pin is prevented from being irradiated with light by providing the outside surface of the hermetically sealed tube, at least in part, with a high emissivity material and then providing a reflectivity material on the exterior surface of the emissivity material.

Abstract: A discharge lamp of the short arc type in which a lead pin, located within a hermetically sealed tube, is prevented from being irradiated with light. Such a construction prevents the lead pin from undergoing a temperature rise thereby preventing the destruction of the hermetically sealed tube. The discharge lamp of the short arc type includes an arc tube adjoined laterally by hermetically sealed tubes through which a lead pin, which supports an electrode, is routed. The hermetically sealed tubes are sealed by graded glass on the lead pins, and the lead pin is prevented from being irradiated with light by providing the outside surface of the hermetically sealed tube, at least in part, with a high emissivity material and then providing a reflectivity material on the exterior surface of the emissivity material.

Abstract: A method for growing a dielectric film containing Sr on a substrate includes the steps of: dissolving a Sr compound containing Sr((CH.sub.3).sub.5 C.sub.5).sub.2 into an organic solvent or mixing Sr(thd).sub.2 and an amine compound to form a source material; vaporizing the source material to produce a gaseous source material; and decomposing the gaseous source material, obtained in the step of vaporization, in the vicinity of a surface of a substrate held in a reaction chamber, to cause a deposition of a dielectric film containing Sr upon the surface of the substrate.

Abstract: A photograph developing apparatus includes a main processing tank and a sub-tank which is connected to the main processing tank. The sub-tank is provided with a filter, a sensor, and the like in order to filter processing solution and feed the filtered processing solution back to the main processing tank. The sub-tank has a lid for covering the top of the sub-tank. The lid has an evaporation prevention block which is extended to a point below the surface of the processing solution. Cavity portions are formed in the evaporation prevention block at least at positions corresponding to the filter and the sensor. Alternatively, evaporation of the processing solution is suppressed through employment of an evaporation prevention block which floats on the surface of the processing solution. In this case as well, cavity portions are formed in the block at least at positions corresponding to the filter and the sensor.

Abstract: An apparatus for a chemical vapor deposition of a compound film on a substrate, comprising: a plurality of gas-generating chambers each containing an evaporating boat for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element for heating and evaporating the solid source, having an inlet for a carrier gas and a gas outlet, and arranged such that effective gas-generating portions thereof are thermally isolated from each other; a gas-mixing chamber for mixing gases from said gas-generating chambers, provided with a heater element for heating a gas passing therethrough and having inlets for gases flowing from said gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber containing a substrate on which a compound film is formed by a gas phase reaction, provided with a heating element for heating the substrate, and having an inlet for a gas mixture flowing from said gas-mixing chamber and an exhaust gas outlet.

Abstract: A method of evaluating the characteristics of superconductors, comprising: irradiating light to a superconductor held at a predetermined temperature; detecting light transmitted through the superconductor and composing a spectrum of the transmitted light; and using the obtained spectrum, calculating a ratio of the number of electrons contributing to a normal conduction to the number of electrons contributing to a superconduction in the superconductor, the ratio being effective at said predetermined temperature. A process and an apparatus for forming superconductor films by using the method are also disclosed.