Abstract: Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

Abstract: A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.