Abstract: An apparatus, method, and system each of which obtains sound data based on a plurality of sound signals respectively output from a plurality of microphones, receives a user instruction for enhancing directivity of sensitivity characteristics of at least one of the plurality of microphones in a specific direction, and generates sound data having the directivity in the specific direction, based on the obtained sound data.

Abstract: A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

Abstract: An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeing ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber.

Abstract: A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

Abstract: A portable device operated by a rechargeable battery includes a connecting unit that connects the portable device and a power supply that supplies a driving current and a charging current; a detection unit that detects a battery voltage of the rechargeable battery; and a charging control unit that controls starting and stopping of charging of the rechargeable battery. When the battery voltage is greater than a predetermined threshold value, the charging control unit causes the power supply to stop supplying the charging current until the battery voltage becomes less than the predetermined threshold value. When the battery voltage is less than the predetermined threshold value, the charging control unit causes the power supply to start supplying the charging current until the rechargeable battery is fully charged.

Abstract: In a semiconductor device having a through-hole electrode and a manufacturing method thereof, a dummy groove hole portion for forming insulating portion insulating wirings from each other is provided, to surround a rewiring layer including a through-hole electrode on a back surface of a semiconductor substrate. This allows the wirings to be insulated from each other just by removing the metal layer existing at a bottom portion of the dummy groove hole portion. Thus, a reduction in the processing time can be realized.

Abstract: A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Abstract: An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate.

Abstract: A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.

Abstract: A PDP, which has a plurality of display electrodes formed therein, and is provided with a front plate in which the display electrodes are covered with a first dielectric layer and a protective film and a back plate having a plurality of address electrodes that are formed in a direction orthogonal to the display electrode, and covered with a second dielectric layer (backing dielectric layer, is designed so that the protective film has a structure in which grain-state crystals are aggregated and a grain size of the crystals is large, with a void between adjacent crystals being formed with a small size.

Abstract: A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.

Abstract: A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.

Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

Abstract: A circuit substrate has a flexible thin film, electric wires supported on the film, and an electronic component supported on the film and positioned between the wires so that the wires and the component are electrically connected serially. Also, a thickness of the component is less than that of the electric wires.

Abstract: A circuit substrate has a flexible thin film, electric wires supported on the film, and an electronic component supported on the film and positioned between the wires so that the wires and the component are electrically connected serially. Also, a thickness of the component is less than that of the electric wires.

Abstract: A fluorine-containing precoating (not shown) is formed to cover a phosphor particle (7) by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating (8) covering the phosphor particle (7) is formed by supplying fluorine into the precoating. Thus obtained phosphor particle (7) with the coating (8) is applied in the form of a paste to a substrate (1) on each electrode (2) is between adjacent two ribs (4) to form a phosphor layer (6) including the phosphor particles (7) between the ribs (4) on the substrate (1). The substrate (1) is positioned with respect to another substrate (not shown) having electrodes thereon to form discharge spaces between the substrates. The discharge spade is filled with a discharge gas to produce a plasma display panel (PDP).

Abstract: A circuit substrate has a flexible thin film, electric wires supported on the film, and an electric component supported on the film and positioned between the wires so that the wires and the components are electrically connected serially. Also, a thickness of the component is less than that of the electric wire.