Abstract: When a numerical controller executes a tool-center-point control in which a path of a tool center point with respect to a workpiece is instructed, and the workpiece is machined along the instructed path based on a speed instruction, the numerical controller sets the speed instruction so that the speed instruction is a synthesis speed with respect to a synthesis distance of a relative moving distance between the workpiece and a tool center point and a tool-direction changing distance due to a relative change in a tool direction with respect to the workpiece by a rotary axis. The numerical controller interpolates a position of a linear axis and a position of a rotary axis by the tool-center-point control according to the synthesis speed and drives the linear axis and the rotary axis to the position of the linear axis and the position of the rotary axis created by the interpolation.

Abstract: A liquid-jet head includes nozzles disposed in a predetermined direction and configured to discharge a recording liquid, individual liquid chambers connected to the respective nozzles and configured to supply the recording liquid to the respective nozzles, a common liquid chamber connected to the individual liquid chambers and configured to supply the recording liquid to the individual liquid chambers, an air reservoir space disposed adjacent to the common liquid chamber and configured to retain air, a flexible division wall separating the common liquid chamber from the air reservoir space, a tube unit connected outside the liquid-jet head, a recording liquid supply tube passing through the air reservoir space to divide the air reservoir space into a plurality of spaces and configured to supply the recording liquid to the common chamber, and a connecting unit configured to connect the divided spaces to one another.

Abstract: Disclosed is a droplet discharge head including a nozzle substrate including a nozzle, an individual liquid chamber substrate including an individual liquid chamber, and a common liquid chamber substrate including a common liquid chamber, wherein the substrates are laminated, wherein a portion of a top surface of the common liquid chamber is flexible, wherein the top surface of the common liquid chamber is disposed at a side opposite to another side at which the nozzle plate is disposed, wherein the common liquid chamber has a shape such that one portion of the common liquid chamber is narrowed in a direction in which the substrates are laminated, wherein a height of a wall of the common liquid chamber in the direction in which the substrates are laminated is constant, and wherein the wall is substantially perpendicular to the top surface.

Abstract: Disclosed is a composite component molding metal mold including a first metal mold for molding a first molded product, and a second metal mold for molding a second molded product. Each of the first and second metal molds includes a movable mold and a stationary mold. Each of the stationary molds includes a male mold and a female mold, and each of the movable molds includes a male mold and a female mold. A cavity for molding the first molded product is formed by a combination of the female mold of the stationary mold and the male mold of the movable mold, and another cavity for molding the second molded product is formed by another combination. A space which is in communication with the cavity and the other cavity is provided. When an insertion member is inserted into the space, the cavity and the other cavity are isolated.

Abstract: A liquid droplet ejecting head is disclosed which includes at least one or more nozzles which eject liquid droplets; one or more dedicated liquid chambers which are communicatively connected to the nozzle; a common liquid chamber which is communicatively connected to the dedicated liquid chamber; and an energy generating unit which generates energy provided to the dedicated liquid chamber, wherein at least one wall face of the common liquid chamber includes a flexible wall, which has flexibility; a buffer chamber is included in an opposing area via the flexible wall and the common liquid chamber; and wherein the buffer chamber is communicatively connected to an external space in an area not opposing the common liquid chamber.

Abstract: A liquid-jet head includes nozzles disposed in a predetermined direction and configured to discharge a recording liquid, individual liquid chambers connected to the respective nozzles and configured to supply the recording liquid to the respective nozzles, a common liquid chamber connected to the individual liquid chambers and configured to supply the recording liquid to the individual liquid chambers, an air reservoir space disposed adjacent to the common liquid chamber and configured to retain air, a flexible division wall separating the common liquid chamber from the air reservoir space, a tube unit connected outside the liquid-jet head, a recording liquid supply tube passing through the air reservoir space to divide the air reservoir space into a plurality of spaces and configured to supply the recording liquid to the common chamber, and a connecting unit configured to connect the divided spaces to one another.

Abstract: A droplet discharge head includes a nozzle plate provided with a nozzle opening which discharges an ink drop, an actuator substrate which forms a pressurized liquid chamber communicating with the nozzle opening, and is provided with a pressure generator changing a pressure in the pressured liquid chamber, and a common liquid chamber-forming substrate which forms a common liquid chamber to which ink which is supplied to the pressurized liquid chamber is supplied, the common liquid chamber-forming substrate includes a first plate made of a metal material, a second plate made of a resin material provided on one surface of the first plate, and a third plate made of a resin material provided on the other surface of the first plate, and the first plate, the second plate, and the third plate being integrally molded in a thickness direction.

Abstract: A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

Abstract: A liquid droplet ejecting head is disclosed which includes at least one or more nozzles which eject liquid droplets; one or more dedicated liquid chambers which are communicatively connected to the nozzle; a common liquid chamber which is communicatively connected to the dedicated liquid chamber; and an energy generating unit which generates energy provided to the dedicated liquid chamber, wherein at least one wall face of the common liquid chamber includes a flexible wall, which has flexibility; a buffer chamber is included in an opposing area via the flexible wall and the common liquid chamber; and wherein the buffer chamber is communicatively connected to an external space in an area not opposing the common liquid chamber.

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract: There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

Abstract: An image forming apparatus creates a drive waveform containing a first pulse to discharge the droplet and a second pulse to cause a liquid to flow within a recording head. A data creation part creates data to select a first or second droplet discharge pulse. The first droplet discharge pulse contains the first pulse and the second pulse. The second droplet discharge pulse does not contain the second pulse. When the first or second droplet discharge pulse is selected in a subsequent drive period and when neither the first nor second droplet discharge pulse is selected in a current drive period, the second pulse is selected in the current drive period when selecting the second droplet discharge pulse in the subsequent drive period, and the second pulse is not selected in the current drive period when selecting the first droplet discharge pulse in the subsequent drive period.

Abstract: An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.

Abstract: A liquid-jet head includes nozzles, pressurized chambers to communicate with the nozzles, a common liquid chamber to communicate with each of the pressurized chambers, each of the common liquid chamber and the pressurized liquid chambers having a negative pressure of a predetermined value, first communicating paths to communicate between the common liquid chamber and the pressurized liquid chamber to serve as a filter to prevent air bubbles from intruding into the pressurized liquid chamber, the filter having openings, each opening having an opening area smaller than an opening area of each of the nozzles, and an air bubble discharge chamber including a second communicating path to communicate with the common liquid chamber having an air bubble remaining part in a region downstream in a liquid flow direction, and an opening part from which the air bubbles having entered via the second communicating path are discharged during a maintenance-restoration operation.

Abstract: A numerical controller for controlling a multi-axis machine calculates an axis-dependent translation error amount and an axis-dependent rotation error amount based on a command axis position. Translation and rotation compensation amounts are calculated based on the axis dependent translation and rotation error amounts, respectively. The translation and rotation compensation amounts are added to command linear and rotary axis positions, respectively. Three linear axes and three rotary axes are driven to the added positions, individually. Thus, there is provided a numerical controller that enables even machining with a side face of a tool or boring to be in commanded tool position and posture (orientation) in the multi-axis machine.

Abstract: A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

Abstract: When a numerical controller executes a tool-center-point control in which a path of a tool center point with respect to a workpiece is instructed, and the workpiece is machined along the instructed path based on a speed instruction, the numerical controller sets the speed instruction so that the speed instruction is a synthesis speed with respect to a synthesis distance of a relative moving distance between the workpiece and a tool center point and a tool-direction changing distance due to a relative change in a tool direction with respect to the workpiece by a rotary axis. The numerical controller interpolates a position of a linear axis and a position of a rotary axis by the tool-center-point control according to the synthesis speed and drives the linear axis and the rotary axis to the position of the linear axis and the position of the rotary axis created by the interpolation.

Abstract: When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

Abstract: Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

Abstract: A numerical controller for controlling a multi-axis machine tool having three linear axes and three rotating axes obtains an interpolated tool direction vector by interpolating a tool direction command and computes multiple solutions for three rotating axes from the vector. The three rotating axis positions are computed by synthesizing these multiple solutions. The three linear axis positions on a machine coordinate system are computed by adding to the interpolated tool center point position the product of the interpolated tool direction vector, or a verified tool direction vector based on the three rotating axis positions determined by the rotating axis position computing means, and a tool length compensation amount. The three rotating axes are moved to the positions computed above and the three linear axes are moved to the positions computed above.