Abstract: There is provided an electric power conversion circuit system having a primary side electric power conversion circuit, a secondary side electric power conversion circuit, and a control circuit. The control circuit sets at least one of a half-bridge phase difference between a lower-left-arm transistor and a lower-right-arm transistor of the primary side electric power conversion circuit and a half-bridge phase difference of the secondary side electric power conversion circuit based on OFF periods of the primary side and secondary side electric power conversion circuits, dead-times of the primary side and secondary side electric power conversion circuits, and an amount of change of a power supply voltage so that a current in a non-transmission period of electric power is zero between the primary side and secondary side electric power conversion circuits.

Abstract: An electric power conversion circuit and a control circuit are provided. The electric power conversion circuit includes a primary conversion circuit and a secondary conversion circuit. The primary conversion circuit has switching transistors and a primary coil of a transformer. The secondary conversion circuit has switching transistors and a secondary coil of the transformer. Reactors and a connection port are connected between a connection point of the switching transistors and a connection point of the other the switching transistors in the primary conversion circuit.

Abstract: A power conversion device includes a transformer, a first power conversion unit that performs power conversion on a primary side of the transformer to convert DC power to AC power on the primary side of the transformer, and a second power conversion unit that performs power conversion on a secondary side of the transformer to convert AC power on the secondary side of the transformer to single-phase AC power. The second power conversion unit performs the power conversion using bidirectional switching elements, and switches the bidirectional switching elements in the first power conversion unit at a zero voltage by synchronizing with switching actions in the first power conversion unit. Consequently, a loss can be lessened by making the configuration simpler.

Abstract: A magnetically coupled reactor includes a coupled core member, a first coil, and a second coil. The coupled core member includes a first core and a second core made of a magnetic material and disposed to face each other, a coil channel, and a sheet-like magnetic body by which a coupling portion between cores is put between the first core and the second core at an outer portion of the first and second cores. Each coil is wound around a leg through the coil channel in a lap winding manner such that the coils are overlapped on top of each other in the coil channel when seen in an axial direction. The sheet-like magnetic body extends from the coupling portion between coils into the coil channel and includes a portion arranged between coils located between the coils in the axial direction.

Abstract: A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Abstract: There is provided an electric power conversion circuit system having a primary side electric power conversion circuit, a secondary side electric power conversion circuit, and a control circuit. The control circuit sets at least one of a half-bridge phase difference between a lower-left-arm transistor and a lower-right-arm transistor of the primary side electric power conversion circuit and a half-bridge phase difference of the secondary side electric power conversion circuit based on OFF periods of the primary side and secondary side electric power conversion circuits, dead-times of the primary side and secondary side electric power conversion circuits, and an amount of change of a power supply voltage so that a current in a non-transmission period of electric power is zero between the primary side and secondary side electric power conversion circuits.

Abstract: A magnetic coupling inductor includes a pair of windings that are magnetically coupled. A same phase current and a reverse phase current both flow through the pair of windings, and each winding has a plurality of turns in one layer in the axial direction of the windings. The windings through which the currents of opposite phases flow of the one layer of the pair of windings are oppositely arranged to each other in the axial direction of the windings.

Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.

Abstract: A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

Abstract: A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.

Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.

Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.

Abstract: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

Abstract: A fuel tank has a tank body and a fuel inlet projecting upwardly from the tank body. The fuel tank includes a cylindrical member extending into the tank body, a canister, and a discharging passage in communication with the canister housing an adsorbent for absorbing fuel vapor from the fuel tank. A space between an outer circumferential surface of the cylindrical member and an inner circumferential surface of the fuel inlet is hermetically sealed by a seal. The cylindrical member has a passage for communicating an inside of the cylindrical member with a portion of an outside of the cylindrical member that is lower than the hermetically sealed space. The passage allows air in the tank body to enter the fuel inlet when fuel overflows from the fuel inlet, thereby inhibiting flow of fuel into the canister through the discharging passage.