Abstract: IGBT 10 comprises an n+-type emitter region, an n?-type drift region, a p-type body region disposed between the emitter region and the drift region, a trench gate extending in the body region from the emitter region toward the drift region, and a projecting portion of an insulating material being in contact with a surface of the trench gate. At least a part of the projecting portion projects within the drift region.

Abstract: The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.

Abstract: A power generating apparatus includes an engine for driving a generator; a fuel tank for storing fuel to be supplied to the engine therein, and a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from the fuel tank to inhibit release of the fuel vapor into the atmosphere. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is in communication with an intake system of the engine. The canister is positioned proximate an exhaust system of the engine to improve the purge characteristics of the adsorbent so that a usable life of the adsorbent is increased.

Abstract: A power generating apparatus has a frame, an engine disposed inwardly of the frame and configured to drive a generator, a fuel tank for storing fuel to be supplied to the engine, and a canister containing an adsorbent for adsorbing fuel vapor from the fuel tank. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is also in communication with an intake system. The canister is movably positioned in a space S between the frame and the intake system so as to prevent an increase in the size of the power generating apparatus when the canister is added to the power generating apparatus.

Abstract: A power generating apparatus has a simplified structure for introducing fuel vapor from a fuel tank and blow-by gas produced in an engine into the engine's intake system so as to facilitate the manufacturing of the power generating apparatus. The power generating apparatus includes an engine for driving a generator, a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from a fuel tank, an evaporative fuel inlet pipe for introducing fuel vapor purged from the adsorbent into an engine intake system, and a blow-by gas inlet pipe for introducing blow-by gas produced in the engine into the intake system. A first end of the evaporative fuel inlet pipe is connected to the canister, and a second end of the evaporative fuel inlet pipe is connected to an intermediate portion of the blow-by gas inlet pipe.

Abstract: The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.

Abstract: With conventional device, the quantity of complex defects differs with each semiconductor device because the concentration of impurities intrinsically contained differs for each silicon wafer. Consequently, there is an undesirable variation in characteristics among the semiconductor devices. The invention provides a method for manufacturing PIN type diode which comprises an intermediate semiconductor region in which complex defects are formed. The method comprises introducing impurities (for example, carbon), which are the same kind of impurities intrinsically contained in the intermediate semiconductor region, into the intermediate semiconductor region, and irradiating the intermediate semiconductor region with helium ions to form point defects.

Abstract: An engine generator can have an engine duct for releasing to the outside a cooling air which is used to cool an engine and a muffler, and a generator duct for releasing to the outside a cooling air which is used to cool a generator. The engine duct and the generator duct can be formed in one body as an exhaust duct. The muffler and the generator can be laterally aligned in parallel with each other, and the engine duct and the generator duct can be located in a manner such that the directions of release of the cooling winds from the engine duct and the generator duct are parallel to each other. The exhaust duct can be located with the generator duct secured to a crankcase. An opening of the engine duct, and an opening of the generator duct can be laterally aligned with each other, and the opening of the generator duct can be positioned above the generator.

Abstract: With conventional device, the quantity of complex defects differs with each semiconductor device because the concentration of impurities intrinsically contained differs for each silicon wafer. Consequently, there is an undesirable variation in characteristics among the semiconductor devices. The invention provides a method for manufacturing PIN type diode which comprises an intermediate semiconductor region in which complex defects are formed. The method comprises introducing impurities (for example, carbon), which are the sane kind of impurities intrinsically contained in the intermediate semiconductor region, into the intermediate semiconductor region, and irradiating the intermediate semiconductor region with helium ions to form point defects.

Abstract: A power generating apparatus has a simplified structure for introducing fuel vapor from a fuel tank and blow-by gas produced in an engine into the engine's intake system so as to facilitate the manufacturing of the power generating apparatus. The power generating apparatus includes an engine for driving a generator, a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from a fuel tank, an evaporative fuel inlet pipe for introducing fuel vapor purged from the adsorbent into an engine intake system, and a blow-by gas inlet pipe for introducing blow-by gas produced in the engine into the intake system. A first end of the evaporative fuel inlet pipe is connected to the canister, and a second end of the evaporative fuel inlet pipe is connected to an intermediate portion of the blow-by gas inlet pipe.

Abstract: A power generating apparatus has a frame, an engine disposed inwardly of the frame and configured to drive a generator, a fuel tank for storing fuel to be supplied to the engine, and a canister containing an adsorbent for adsorbing fuel vapor from the fuel tank. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is also in communication with an intake system. The canister is movably positioned in a space S between the frame and the intake system so as to prevent an increase in the size of the power generating apparatus when the canister is added to the power generating apparatus.

Abstract: A power generating apparatus includes an engine for driving a generator, a muffler cover for covering a muffler for exhaust supplied from the engine from an external side of the muffler, a fuel tank for storing fuel to be supplied to the engine, and a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from the fuel tank. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is also in communication with an intake system of the engine. The communicating tube of the canister has its opening at a position near to the muffler as well as to an inner surface, on the side of the muffler, of the muffler cover, to improve the purge characteristics of the adsorbent so that the usable live of the adsorbent is increased.

Abstract: Mounts can be provided at the four corners of a bottom portion of an engine generator. Projections for mounting handles can be provided at a top portion of the engine generator in vertical alignment above the mounts. The bottom face of each mount can be formed with a fitting groove having an open end. Fitting the projections in the fitting grooves allows stacking plural engine generators. The mount can be constituted with a bottom portion, a side portion, and a reinforcing metal fitting. The projections can be disposed on a front frame and a rear frame, respectively, each formed in one body. The mounts can also be attached to the front frame and the rear frame.

Abstract: The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p? type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n? type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

Abstract: A power generating apparatus includes an engine for driving a generator; a fuel tank for storing fuel to be supplied to the engine therein, and a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from the fuel tank to inhibit release of the fuel vapor into the atmosphere. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is in communication with an intake system of the engine. The canister is positioned proximate an exhaust system of the engine to improve the purge characteristics of the adsorbent so that a usable life of the adsorbent is increased.

Abstract: With conventional device, the quantity of complex defects differs with each semiconductor device because the concentration of impurities intrinsically contained differs for each silicon wafer. Consequently, there is an undesirable variation in characteristics among the semiconductor devices. The invention provides a method for manufacturing PIN type diode which comprises an intermediate semiconductor region in which complex defects are formed. The method comprises introducing impurities (for example, carbon), which are the same kind of impurities intrinsically contained in the intermediate semiconductor region, into the intermediate semiconductor region, and irradiating the intermediate semiconductor region with helium ions to form point defects.

Abstract: The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p? type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n? type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).

Abstract: A framework of an engine generator can be made up of a front frame and a rear frame which can be made from aluminum die castings. Securing frames can be configured to removeably connect the opposing bottom edges of the front frame and the rear frame, on their both sides through bolts and nuts. Handles can be configured to removeably connect the opposing top edges of the front frame and the rear frame, on their both sides through bolts and nuts. The front frame and the rear frame can be formed integral with rib portions for mounting panels respectively, and handle mounting portions and respectively, for mounting the handles.

Abstract: The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.

Abstract: The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.