Patents by Inventor Takahiko Sakamoto
Takahiko Sakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8742438Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: GrantFiled: December 11, 2012Date of Patent: June 3, 2014Assignee: Nichia CorporationInventors: Takeshi Kususe, Takahiko Sakamoto
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Patent number: 8698188Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: GrantFiled: March 5, 2011Date of Patent: April 15, 2014Assignee: Nichia CorporationInventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Patent number: 8674381Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: GrantFiled: January 3, 2011Date of Patent: March 18, 2014Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Patent number: 8330179Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: GrantFiled: October 11, 2011Date of Patent: December 11, 2012Assignee: Nichia CorporationInventors: Takeshi Kususe, Takahiko Sakamoto
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Patent number: 8120057Abstract: The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.Type: GrantFiled: June 7, 2011Date of Patent: February 21, 2012Assignee: Nichia CorporationInventors: Masahiko Sano, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan
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Publication number: 20120032225Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: ApplicationFiled: March 5, 2011Publication date: February 9, 2012Inventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Publication number: 20120025256Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: ApplicationFiled: October 11, 2011Publication date: February 2, 2012Inventors: Takeshi KUSUSE, Takahiko Sakamoto
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Patent number: 8035118Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: GrantFiled: June 10, 2008Date of Patent: October 11, 2011Assignee: Nichia CorporationInventors: Takeshi Kususe, Takahiko Sakamoto
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Publication number: 20110233596Abstract: The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.Type: ApplicationFiled: June 7, 2011Publication date: September 29, 2011Inventors: Masahiko SANO, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan
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Patent number: 7982236Abstract: The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.Type: GrantFiled: January 31, 2008Date of Patent: July 19, 2011Assignee: Nichia CorporationInventors: Masahiko Sano, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan
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Patent number: 7947996Abstract: It is an important factor in application to the illumination field and the like to obtain a characteristic excellent in power efficiency in a light emitting element. The present invention provides a semiconductor light emitting element including: first and second conductive type semiconductor layers; first and second electrodes respectively provided on the same plane sides as the first and second conductive type semiconductor layers; and a light emitting structure, provided with the second electrode and including the first and second conductive type semiconductor layers, wherein the first electrode provided on an exposed surface of the first conductive type semiconductor layer at least has a translucent first layer and a reflective second layer, and the first layer has projecting portions projected from both sides of the second layer in a cross section of the element crossing over the light emitting structure and the first electrode.Type: GrantFiled: June 27, 2007Date of Patent: May 24, 2011Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Masahiko Onishi, Yoshiki Inoue
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Publication number: 20110095265Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: ApplicationFiled: January 3, 2011Publication date: April 28, 2011Applicant: NICHIA CORPORATIONInventors: Takahiko SAKAMOTO, Yasutaka Hamaguchi
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Patent number: 7884379Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.Type: GrantFiled: May 29, 2007Date of Patent: February 8, 2011Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Patent number: 7791098Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.Type: GrantFiled: March 19, 2008Date of Patent: September 7, 2010Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Yasutaka Hamaguchi
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Patent number: 7615798Abstract: A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).Type: GrantFiled: March 29, 2005Date of Patent: November 10, 2009Assignee: Nichia CorporationInventors: Daisuke Sanga, Takeshi Kususe, Takahiko Sakamoto, Hisashi Kasai
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Patent number: 7560475Abstract: The present invention relates to the compound represented by formula (I) (wherein R1 and R2 is hydrogen atom, C1-8 alkyl etc.; R3 is C1-8 alkyl which may be substituted with 1 to 3 halogen atom(s), phenyl; R4 is hydrogen atom etc.; R5 and R6 is hydrogen atom, C1-8 alkyl etc.; X is sulfur atom or oxygen atom etc.; ringA is cyclic group which may have a substituent(s).), or a salt thereof. Toxicity of the compound represented by formula (I) is very low, and it is safe enough to use as a pharmaceutical agent and since it has PPAR ? agonistic activity, it is useful as preventive and/or therapeutic agent for glucoseā¢lipid metabolic disorder, hypertension, circulatory diseases etc.Type: GrantFiled: September 21, 2004Date of Patent: July 14, 2009Assignee: Ono Pharmaceutical Co., Ltd.Inventors: Shinya Kusuda, Yoshisuke Nakayama, Hisao Tajima, Takahiko Sakamoto
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Patent number: 7511311Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.Type: GrantFiled: August 1, 2003Date of Patent: March 31, 2009Assignee: Nichia CorporationInventors: Takeshi Kususe, Takahiko Sakamoto
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Patent number: 7495259Abstract: A light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving the efficiency of outgoing light and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least a p-side connecting portion to be connected to a conductive member. The light-emitting diode further includes an n-side connecting area, in which the n-side connecting portion is provided, provided in proximity to one end in the longitudinal direction, a p-side connecting area, in which the p-side connecting portion is provided, provided in proximity to another end in the longitudinal direction, and a middle area provided between them, and the n-side extending portion is positioned in the middle area, and extends so as to be opposed to the p-side current diffusing member.Type: GrantFiled: December 7, 2005Date of Patent: February 24, 2009Assignee: Nichia CorporationInventors: Takahiko Sakamoto, Takeshi Kususe
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Patent number: RE49298Abstract: The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.Type: GrantFiled: April 5, 2019Date of Patent: November 15, 2022Assignee: NICHIA CORPORATIONInventors: Masahiko Sano, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan
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Patent number: RE49406Abstract: The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.Type: GrantFiled: July 10, 2019Date of Patent: January 31, 2023Assignee: NICHIA CORPORATIONInventors: Masahiko Sano, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan