Patents by Inventor Takahiko Sakamoto

Takahiko Sakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080290365
    Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.
    Type: Application
    Filed: March 19, 2008
    Publication date: November 27, 2008
    Inventors: Takahiko Sakamoto, Yasutaka Hamaguchi
  • Publication number: 20080251808
    Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
    Type: Application
    Filed: June 10, 2008
    Publication date: October 16, 2008
    Inventors: Takeshi Kususe, Takahiko Sakamoto
  • Publication number: 20080185606
    Abstract: The present invention provides a light emitting element capable or realizing at least one of, preferably, most of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure.
    Type: Application
    Filed: January 31, 2008
    Publication date: August 7, 2008
    Applicant: NICHIA CORPORATION
    Inventors: Masahiko Sano, Takahiko Sakamoto, Keiji Emura, Katsuyoshi Kadan
  • Publication number: 20080142821
    Abstract: It is an important factor in application to the illumination field and the like to obtain a characteristic excellent in power efficiency in a light emitting element. The present invention provides a semiconductor light emitting element including: first and second conductive type semiconductor layers; first and second electrodes respectively provided on the same plane sides as the first and second conductive type semiconductor layers; and a light emitting structure, provided with the second electrode and including the first and second conductive type semiconductor layers, wherein the first electrode provided on an exposed surface of the first conductive type semiconductor layer at least has a translucent first layer and a reflective second layer, and the first layer has projecting portions projected from both sides of the second layer in a cross section of the element crossing over the light emitting structure and the first electrode.
    Type: Application
    Filed: June 27, 2007
    Publication date: June 19, 2008
    Applicant: NICHIA CORPORATION
    Inventors: Takahiko Sakamoto, Masahiko Onishi, Yoshiki Inoue
  • Patent number: 7358544
    Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: April 15, 2008
    Assignee: Nichia Corporation
    Inventors: Takahiko Sakamoto, Yasutaka Hamaguchi
  • Publication number: 20070272937
    Abstract: A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: 0.3L?X?0.5L and 0.2L?Y?0.5L where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.
    Type: Application
    Filed: May 29, 2007
    Publication date: November 29, 2007
    Applicant: NICHIA CORPORATION
    Inventors: Takahiko Sakamoto, Yasutaka Hamaguchi
  • Publication number: 20070105868
    Abstract: The present invention relates to the compound represented by formula (I) (wherein R1 and R2 is hydrogen atom, C1-8 alkyl etc.; R3 is C1-8 alkyl which may be substituted with 1 to 3 halogen atom(s), phenyl; R4 is hydrogen atom etc.; R5 and R6 is hydrogen atom, C1-8 alkyl etc.; X is sulfur atom or oxygen atom etc.; ringA is cyclic group which may have a substituent(s).), or a salt thereof. Toxicity of the compound represented by formula (I) is very low, and it is safe enough to use as a pharmaceutical agent and since it has PPAR ? agonistic activity, it is useful as preventive and/or therapeutic agent for glucose.lipid metabolic disorder, hypertension, circulatory diseases etc.
    Type: Application
    Filed: September 21, 2004
    Publication date: May 10, 2007
    Inventors: Shinya Kusuda, Yoshisuke Nakayama, Hisao Tajima, Takahiko Sakamoto
  • Publication number: 20060231852
    Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.
    Type: Application
    Filed: August 1, 2003
    Publication date: October 19, 2006
    Applicant: NICHIA CORPORATION
    Inventors: Takeshi Kususe, Takahiko Sakamoto
  • Patent number: 7075115
    Abstract: A light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving the efficiency of outgoing light and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least a p-side connecting portion to be connected to a conductive member. The light-emitting diode further includes an n-side connecting area, in which the n-side connecting portion is provided, provided in proximity to one end in the longitudinal direction, a p-side connecting area, in which the p-side connecting portion is provided, provided in proximity to another end in the longitudinal direction, and a middle area provided between them, and the n-side extending portion is positioned in the middle area, and extends so as to be opposed to the p-side current diffusing member.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: July 11, 2006
    Assignee: Nichia Corporation
    Inventors: Takahiko Sakamoto, Takeshi Kususe
  • Publication number: 20060081865
    Abstract: A light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving the efficiency of outgoing light and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least a p-side connecting portion to be connected to a conductive member. The light-emitting diode further includes an n-side connecting area, in which the n-side connecting portion is provided, provided in proximity to one end in the longitudinal direction, a p-side connecting area, in which the p-side connecting portion is provided, provided in proximity to another end in the longitudinal direction, and a middle area provided between them, and the n-side extending portion is positioned in the middle area, and extends so as to be opposed to the p-side current diffusing member.
    Type: Application
    Filed: December 7, 2005
    Publication date: April 20, 2006
    Inventors: Takahiko Sakamoto, Takeshi Kususe
  • Publication number: 20060017061
    Abstract: A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-side pad electrode 14 formed for the connection with an outside circuit, and the n-side pad electrode 12 formed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrode 10 and/or the p-side nitride semiconductor layer are made different depending on the position.
    Type: Application
    Filed: March 30, 2005
    Publication date: January 26, 2006
    Applicant: NICHIA CORPORATION
    Inventors: Takahiko Sakamoto, Yasutaka Hamaguchi
  • Publication number: 20050212002
    Abstract: A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).
    Type: Application
    Filed: March 29, 2005
    Publication date: September 29, 2005
    Inventors: Daisuke Sanga, Takeshi Kususe, Takahiko Sakamoto, Hisashi Kasai
  • Publication number: 20040124422
    Abstract: The present invention provide a light-emitting diode capable of making its light emission more uniform without too high a concentration current and of improving efficiency of light outgoing and its life. In the light-emitting diode, the n-side electrode has an n-side connecting portion and an n-side extending portion, which extends in the longitudinal direction from a predetermined part of the n-side connecting portion, and the p-side pad member has at least p-side connecting portion to be connected to a conductive member.
    Type: Application
    Filed: October 1, 2003
    Publication date: July 1, 2004
    Inventors: Takahiko Sakamoto, Takeshi Kususe