Abstract: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.

Abstract: An electronic device includes a substrate, a sidewall that is disposed on the substrate and forms a cavity, a first layer that is disposed on the sidewall and covers the cavity, a second layer that is formed on the first layer and has a region disposed outside an outline of the first layer in a plan view, a dielectric layer disposed below the region of the second layer disposed outside the outline of the first layer in a plan view, and a functional element disposed inside the cavity.

Abstract: A method for producing an oscillator includes: (a) forming a first layer on a substrate; (b) ion implanting a first impurity into a first region of the first layer; (c) forming a first electrode having a tapered plane on a side surface thereof by patterning the first layer; (d) forming a sacrificial layer on the first electrode and on the tapered plane of the first electrode; (e) forming a second electrode on the substrate and the sacrificial layer; and (f) removing the sacrificial layer. The step (b) is performed so that the concentration of the first impurity monotonically decreases from the upper surface side to the lower surface side in a region located at a depth of more than 10 nm from the upper surface of the first electrode.

Abstract: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

Abstract: A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

Abstract: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

Abstract: An electronic device according to an aspect of the invention include: a substrate; an underlayer having an opening and being formed on the substrate; a functional element provided on the underlayer; and a surrounding wall forming a cavity that accommodates the functional element, at least a part of the surrounding wall being disposed in the opening.

Abstract: A method for manufacturing a vibrator according to the present invention includes: forming a coating layer that covers a silicon substrate; patterning the coating layer; forming a semiconductor layer that covers the silicon substrate and the coating layer; forming a vibrating portion having a beam shape on the coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate; forming a recess portion by removing the silicon substrate through the opening; and removing the coating layer. In the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the coating layer is formed.

Abstract: A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

Abstract: A method for producing an oscillator includes: (a) forming a first layer on a substrate; (b) ion implanting a first impurity into a first region of the first layer; (c) forming a first electrode having a tapered plane on a side surface thereof by patterning the first layer; (d) forming a sacrificial layer on the first electrode and on the tapered plane of the first electrode; (e) forming a second electrode on the substrate and the sacrificial layer; and (f) removing the sacrificial layer. The step (b) is performed so that the concentration of the first impurity monotonically decreases from the upper surface side to the lower surface side in a region located at a depth of more than 10 nm from the upper surface of the first electrode.

Abstract: An electronic device includes a substrate, a sidewall that is disposed on the substrate and forms a cavity, a first layer that is disposed on the sidewall and covers the cavity, a second layer that is formed on the first layer and has a region disposed outside an outline of the first layer in a plan view, a dielectric layer disposed below the region of the second layer disposed outside the outline of the first layer in a plan view, and a functional element disposed inside the cavity.

Abstract: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

Abstract: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.

Abstract: A method for manufacturing a structure includes forming a layer of photosensitive material above a substrate, disposing a mask above the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a first region of the layer of photosensitive material, exposing the first region, moving the mask along a surface of the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a second region that is a portion of the first region and a third region that is adjacent to the second region and is a portion of the region shielded in the step, and exposing the second region and the third region, and developing the layer of photosensitive material to form surfaces in the layer of photosensitive material at different heights along a direction in which the mask is moved.

Abstract: A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

Abstract: The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

Abstract: The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

Abstract: The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

Abstract: An insulating film having dielectric constant not greater than 2.7 is provided above a semiconductor substrate. A via comprises a conductive material, which is provided in a via hole formed in the insulating film. A first interconnection comprises a conductive material, which is provided in an interconnection trench formed on the via in the insulating film. A first high-density region is formed in the insulating film, and has a cylindrical shape surrounding the via, an inner surface common to the boundary of the via hole, and a film density higher than the insulating film.

Abstract: The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.