Abstract: a first compliance portion provided at a position on the first side of a coupling area in the common flow path where the common flow path is coupled to the plurality of individual flow paths; and a second compliance portion, different from the first compliance portion, provided at a position on a second side of the coupling area in the common flow path, the second side being the other side in the second direction and being opposite to the first side, and the first compliance portion and the second compliance portion have an overlapping portion where the first compliance portion and the second compliance portion partially overlap each other as viewed in the second direction.

Abstract: A liquid ejecting head includes: a nozzle substrate having a nozzle configured to eject liquid; a pressure chamber substrate having a pressure chamber in which a pressure for ejecting liquid through the nozzle is applied to liquid and an absorption chamber adjacent to an upstream portion of the pressure chamber and configured to absorb vibration of liquid that occurs when a pressure is applied to the liquid in the pressure chamber; a first piezoelectric element associated with the pressure chamber and configured to be driven by voltage application; and a second piezoelectric element associated with the absorption chamber and configured to be driven independently of the first piezoelectric element by voltage application.

Abstract: An object of the invention is to provide a photo-alignment copolymer which makes it possible to produce a photo-alignment film having excellent solvent resistance and liquid crystal aligning properties, and a photo-alignment film and an optical laminate produced using the photo-alignment copolymer. A photo-alignment copolymer of the invention is a photo-alignment copolymer having a repeating unit A including a photo-alignment group represented by Formula (A) and a repeating unit B including a crosslinkable group represented by Formula (B).

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: A coil device includes a bobbin, a main core, and wires. A connection portion located between a first bobbin flange portion and a second bobbin flange portion includes a raised portion protruding along a direction perpendicular to a first axis more than the connection portion located between a first terminal block and a first bobbin flange portion. Communication wire portions connecting first wires of a proximal first coil and first wires of a distal first coil are arranged in a wiring space formed between second wires wound in contact with an upper end of the raised portion and an outer surface of the winding core portion or the bobbin.

Abstract: Providing an electric tool with excellent cooling efficiency. An electric tool includes: a housing 2; a motor 3; a fan 34; a sensing portion 41; a switching portion 42; and a circuit board 40. The motor 3 is accommodated in the housing 2. The motor 3 includes a stator 33, a rotor 32, and a rotating shaft 31. The rotor 32 is rotatable relative to the stator 33. The rotating shaft 31 is rotatable together with the rotor 32. The fan 34 is configured to generate a cooling air flow inside the housing 2. The sensing portion 41 is configured to detect a rotated position of the rotor 32. The switching portion 41 controls a rotation of the rotor 32. The sensing portion 41 and the switching portion 42 are mounted on the circuit board 40.

Abstract: A method for converting an N,N-dialkylamide compound into an ester compound includes using a fourth period transition metal complex as a catalyst. The fourth period transition metal complex is obtained by a reaction of a precursor having a fourth period transition metal with a nitrogen-containing compound or a phosphorus-containing compound.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: To provide a rotary impact tool capable of: suppressing a rise in temperature in a motor or switching elements and a current flowing in the motor or switching elements while suppressing a degradation in tightening performance; and improving operability. The rotary impact tool includes: a motor; an end-bit holding part driven by the motor; an impact mechanism provided on a drive transmission path from the motor to the end-bit holding part and configured to intermittently produce rotary impacts, the rotary impacts transmitting a drive force of the motor to the end-bit holding part; a switching element configured to change a voltage supplied to the motor; and a control unit controlling the switching element. The control unit is configured such that the voltage supplied to the motor begins to gradually rise within a period of time from a timing when a first rotary impact ends to a timing when a second rotary impact subsequent to the first rotary impact starts.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: A method for converting an N,N-dialkylamide compound into an ester compound includes using a fourth period transition metal complex as a catalyst. The fourth period transition metal complex is obtained by a reaction of a precursor having a fourth period transition metal with a nitrogen-containing compound or a phosphorus-containing compound.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: Providing an electric tool with excellent cooling efficiency. An electric tool includes: a housing 2; a motor 3; a fan 34; a sensing portion 41; a switching portion 42; and a circuit board 40. The motor 3 is accommodated in the housing 2. The motor 3 includes a stator 33, a rotor 32, and a rotating shaft 31. The rotor 32 is rotatable relative to the stator 33. The rotating shaft 31 is rotatable together with the rotor 32. The fan 34 is configured to generate a cooling air flow inside the housing 2. The sensing portion 41 is configured to detect a rotated position of the rotor 32. The switching portion 41 controls a rotation of the rotor 32. The sensing portion 41 and the switching portion 42 are mounted on the circuit board 40.

Abstract: A portable working machine including: a driving source; a main body including the driving source; a handle joined with the main body; a fixing portion provided to one of the main body or the handle; and a vibration-proofing mechanism including an elastic body, the handle joined with the main body with the vibration-proofing mechanism and the fixing portion interposed therebetween; wherein the elastic body of the vibration-proofing mechanism is fixed to a first side of the fixing portion, and a stopper portion configured to come into contact with the other of the main body or the handle to regulate a movement amount of the handle is provided at a second side of the fixing portion, which is opposite to the first side of the fixing portion.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: To provide a rotary impact tool capable of: suppressing a rise in temperature in a motor or switching elements and a current flowing in the motor or switching elements while suppressing a degradation in tightening performance; and improving operability. The rotary impact tool includes: a motor; an end-bit holding part driven by the motor; an impact mechanism provided on a drive transmission path from the motor to the end-bit holding part and configured to intermittently produce rotary impacts, the rotary impacts transmitting a drive force of the motor to the end-bit holding part; a switching element configured to change a voltage supplied to the motor; and a control unit controlling the switching element. The control unit is configured such that the voltage supplied to the motor begins to gradually rise within a period of time from a timing when a first rotary impact ends to a timing when a second rotary impact subsequent to the first rotary impact starts.

Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers that are stacked in plurality in a first direction via an inter-layer insulating layer, that extend in a second direction which intersects the first direction, and that are disposed in plurality in a third direction which intersects the first direction and the second direction. In addition, the same nonvolatile semiconductor memory device comprises: a semiconductor layer that has the first direction as a longitudinal direction; a tunnel insulating layer that contacts a side surface of the semiconductor layer; a charge accumulation layer that contacts a side surface of the tunnel insulating layer; and a block insulating layer that contacts a side surface of the charge accumulation layer. Furthermore, in the same nonvolatile semiconductor memory device, an end in the third direction of the plurality of conductive layers is rounded.

Abstract: A working machine has an oil groove communicating a pump chamber with a gear chamber, and a small amount of oil is delivered to the gear chamber when oil is discharged from the pump chamber. Thus, the oil adheres to the outer peripheral surface of a rotating pump shaft and is kept remaining between a pump case and the pump shaft. Therefore, the viscosity is increased and a pressure loss between the pump chamber and the gear chamber is increased. Accordingly, the airtightness can be maintained, and the stable and inexpensive oil pump mechanism requiring less man-hour can be realized without depending on the accuracy of a gap between the pump case and the pump shaft. Since oil is kept remaining on the outer peripheral surface of the pump shaft, it is possible to prevent the pump case from being worn out and to improve the durability of components.

Abstract: A portable working machine including: a driving source; a main body including the driving source; a handle joined with the main body; a fixing portion provided to one of the main body or the handle; and a vibration-proofing mechanism including an elastic body, the handle joined with the main body with the vibration-proofing mechanism and the fixing portion interposed therebetween; wherein the elastic body of the vibration-proofing mechanism is fixed to a first side of the fixing portion, and a stopper portion configured to come into contact with the other of the main body or the handle to regulate a movement amount of the handle is provided at a second side of the fixing portion, which is opposite to the first side of the fixing portion.