Patents by Inventor Takahiro Ibe

Takahiro Ibe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8941301
    Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: January 27, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Hisao Ikeda, Junichi Koezuka, Kaoru Kato
  • Patent number: 8920562
    Abstract: An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: December 30, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Tomoya Aoyama, Takahiro Ibe, Yoshiharu Hirakata, Shunpei Yamazaki
  • Patent number: 8900675
    Abstract: One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: December 2, 2014
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Takahiro Ibe, Tomoya Aoyama, Rena Tsuruoka, Satoshi Inoue, Tohru Sonoda
  • Patent number: 8821963
    Abstract: A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate.
    Type: Grant
    Filed: January 29, 2009
    Date of Patent: September 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Takahiro Ibe, Kohei Yokoyama, Hisao Ikeda, Norifumi Takesue
  • Patent number: 8796911
    Abstract: There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: August 5, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Takahiro Ibe, Hisao Ikeda
  • Patent number: 8734915
    Abstract: A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: May 27, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takahiro Ibe, Takuya Tsurume, Koichiro Tanaka, Satoshi Seo
  • Patent number: 8734914
    Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: May 27, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Tomoya Aoyama
  • Patent number: 8592852
    Abstract: To provide a light-emitting device from which uniform light emission can be obtained by providing an auxiliary wiring; a light-emitting device in which a short circuit between electrodes or between an electrode and an auxiliary wiring, which is attributed to a step caused by the auxiliary wiring, hardly occurs; and a light-emitting device which has high reliability by preventing a short circuit. In an EL light-emitting device including an auxiliary wiring, by covering a step caused by the auxiliary wiring is covered with an insulator, a short circuit between electrodes or between an electrode and the auxiliary wiring, which is attributed to the step caused by the auxiliary wiring, is prevented. Thus, the above objects are achieved.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: November 26, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Hisao Ikeda
  • Patent number: 8581234
    Abstract: Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer.
    Type: Grant
    Filed: February 24, 2009
    Date of Patent: November 12, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka, Takahiro Ibe, Satoshi Seo
  • Patent number: 8551557
    Abstract: A method for manufacturing a light-emitting device including a layer containing different evaporation materials, by which a desired layer containing the different evaporation materials is formed easily using a plurality of evaporation materials. A light-emitting device is manufactured in such a manner that a plurality of layers each containing a different evaporation material from each other is stacked over a first substrate; a second substrate which has a first electrode is placed at a position facing the first substrate; the plurality of layers containing evaporation materials is heated to form a layer containing different evaporation materials is formed on the first electrode provided for the second substrate; and a second electrode is formed on the layer containing different evaporation materials.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: October 8, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Yosuke Sato, Kohei Yokoyama
  • Patent number: 8531104
    Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
    Type: Grant
    Filed: January 22, 2013
    Date of Patent: September 10, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Junichi Koezuka, Kaoru Kato
  • Patent number: 8435811
    Abstract: An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: May 7, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kohei Yokoyama, Takahiro Ibe, Takuya Tsurume, Koichiro Tanaka
  • Patent number: 8367152
    Abstract: For a full-color flat panel display, demands for high definition, high aperture ratio and high reliability have been increasing. Therefore, increasing in the number of pixels and narrowing a pixel pitch have been major issues. According to the present invention, a layer including an organic compound is selectively formed with a light-exposure apparatus used in a photolithography technique without a resist mask. A material layer including a photopolymerization initiator, a material polymerized with the photopolymerization initiator, and an organic compound are formed on a plate, and then are exposed to light and selectively cured. A film-formation substrate is disposed so as to face the plate. The film-formation substrate or the material layer is heated so that the organic compound included in a region exposed to light or a region not exposed to light is evaporated to be selectively deposited on the surface of the film-formation substrate.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: February 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kohei Yokoyama, Hisao Ikeda, Yosuke Sato, Tomoya Aoyama, Takahiro Ibe, Yoshiharu Hirakata
  • Patent number: 8368301
    Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: February 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Junichi Koezuka, Kaoru Kato
  • Patent number: 8368298
    Abstract: To improve an image quality of an organic EL display by utilizing characteristics of a dual emission type organic light emitting element. A display device includes a first substrate over which a plurality of organic light emitting elements are provided and a second substrate over which an organic light emitting element is provided. The first and second substrates are facing each other. At least either the organic light emitting elements provided over the first substrate or the organic light emitting element provided over the second substrate emit/emits light toward both surfaces of the first or second substrate. Light emitting regions of the organic light emitting elements provided over the first substrate are overlapped with a light emitting region of the organic light emitting element provided over the second substrate as seen from the second substrate.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: February 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Takahiro Ibe
  • Publication number: 20130005121
    Abstract: One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
    Type: Application
    Filed: February 28, 2011
    Publication date: January 3, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Tomoya Aoyama, Rena Sturuoka, Satoshi Inoue, Tohru Sonoda
  • Publication number: 20130003396
    Abstract: There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 3, 2013
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junichiro Sakata, Takahiro Ibe, Hisao Ikeda
  • Publication number: 20120305907
    Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.
    Type: Application
    Filed: August 13, 2012
    Publication date: December 6, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro IBE, Hisao IKEDA, Junichi KOEZUKA, Kaoru KATO
  • Patent number: 8319212
    Abstract: The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: November 27, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Hisao Ikeda, Junichi Koezuka, Kaoru Kato
  • Patent number: 8313603
    Abstract: An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: November 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Tomoya Aoyama, Takahiro Ibe, Yoshiharu Hirakata, Shunpei Yamazaki