Patents by Inventor Takahiro Ibe

Takahiro Ibe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120285379
    Abstract: Demands such as higher definition, higher opening aperture, and higher reliability on a full-color flat panel display have been increased. Such demands are big objects in advancing higher definition (increase in the number of pixels) of a light-emitting device and miniaturization of each display pixel pitch with reduction in size of the light-emitting device. An organic compound-containing layer is selectively deposited using a laser beam which passes through openings of a mask. An irradiated substrate provided with a light absorption layer and a material layer containing an organic compound and a deposition substrate provided with first electrodes are placed so as to face each other. The light absorption layer is heated by a laser beam which has passed through the openings of the mask, and the organic compound at a position overlapping with the heated region is vaporized, and accordingly the organic compound is selectively deposited over the deposition substrate.
    Type: Application
    Filed: July 26, 2012
    Publication date: November 15, 2012
    Inventors: Yoshiharu Hirakata, Hisao Ikeda, Takahiro Ibe, Shunpei Yamazaki
  • Patent number: 8310142
    Abstract: There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Takahiro Ibe, Hisao Ikeda
  • Patent number: 8293319
    Abstract: By irradiating a first substrate which is an evaporation donor substrate including a function layer in which films having different refractive indexes (high-refractive index films and low refractive index films) are stacked with first light (wavelength=?1), a material layer over the first substrate is patterned, and by irradiating the first substrate with second light (wavelength=?2) which is different from ?1, the material layer which is patterned is evaporated onto a second substrate which is a deposition target substrate.
    Type: Grant
    Filed: April 24, 2009
    Date of Patent: October 23, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe
  • Patent number: 8253327
    Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: August 28, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Hisao Ikeda, Junichi Koezuka, Kaoru Kato
  • Patent number: 8252378
    Abstract: To improve the use efficiency of a vapor-deposition material, reduce the manufacturing cost of a light-emitting device including a layer containing an organic compound, and shorten the manufacturing time for manufacturing a light-emitting device. Inside of a film formation chamber is made in a reduced pressure state, and conductive-surface substrate is energized, so that the conductive-surface substrate is heated rapidly, and a material layer over the conductive-surface substrate is evaporated in a short period of time to be vapor-deposited on a film formation substrate, whereby film formation of the material layer is performed on the film formation substrate. Note that the heating area of the conductive-surface substrate which is rapidly heated is set to be the same size as the film formation substrate so that film formation on one film formation substrate is completed by one heating.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: August 28, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ibe, Hisao Ikeda
  • Patent number: 8232038
    Abstract: Demands such as higher definition, higher opening aperture, and higher reliability on a full-color flat panel display have been increased. Such demands are big objects in advancing higher definition (increase in the number of pixels) of a light-emitting device and miniaturization of each display pixel pitch with reduction in size of the light-emitting device. An organic compound-containing layer is selectively deposited using a laser beam which passes through openings of a mask. An irradiated substrate provided with a light absorption layer and a material layer containing an organic compound and a deposition substrate provided with first electrodes are placed so as to face each other. The light absorption layer is heated by a laser beam which has passed through the openings of the mask, and the organic compound at a position overlapping with the heated region is vaporized, and accordingly the organic compound is selectively deposited over the deposition substrate.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: July 31, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Hisao Ikeda, Takahiro Ibe, Shunpei Yamazaki
  • Patent number: 8207665
    Abstract: An organic EL element has excellent features as compared with other electroluminescent elements, but on the other hand, has a problem that the life of the element is not sufficiently long. In addition, since the organic EL element is expected to be applied to a mobile display and the like, it is also important to improve power efficiency. Hence, an object of the invention is to provide an element structure to realize an improvement in power efficiency and an improvement in the life of the element at the same. In the construction of an organic EL element of the invention, the first electroluminescent film 303 is sandwiched by the first anode 302 and a cathode 304, and the second electroluminescent film 305 and the second anode 306 are laminated over the cathode 304. At this time, the first anode 302 is put into contact with the second anode 306 to form a parallel circuit to decrease an electric current passing through the respective electroluminescent films.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: June 26, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Takahiro Ibe
  • Publication number: 20120148730
    Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
    Type: Application
    Filed: February 17, 2012
    Publication date: June 14, 2012
    Inventors: Hisao Ikeda, Takahiro Ibe, Tomoya Aoyama
  • Patent number: 8187917
    Abstract: Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: May 29, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Junichi Koezuka, Kaoru Kato
  • Publication number: 20120088324
    Abstract: An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
    Type: Application
    Filed: December 19, 2011
    Publication date: April 12, 2012
    Inventors: Kohei YOKOYAMA, Takahiro IBE, Takuya TSURUME, Koichiro TANAKA
  • Publication number: 20120080714
    Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
    Type: Application
    Filed: December 13, 2011
    Publication date: April 5, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisao IKEDA, Takahiro Ibe, Junichi Koezuka, Kaoru Kato
  • Patent number: 8119204
    Abstract: A binder material layer including an evaporation material is formed over a main surface of an evaporation source substrate, a substrate on which a film is formed is placed so that the binder material layer and a main surface thereof face each other, and heat treatment is performed on a rear surface of the evaporation source substrate so that the evaporation material in the binder material layer is heated to be subjected to sublimation or the like, whereby a layer of the evaporation material is formed on the substrate on which a film is formed. When a low molecular material is used for the evaporation material and a high molecular material is used for the binder material, the viscosity can be easily adjusted, and thus, film formation is possible with higher throughput than conventional film formation.
    Type: Grant
    Filed: March 26, 2008
    Date of Patent: February 21, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Tomoya Aoyama
  • Patent number: 8093806
    Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
    Type: Grant
    Filed: June 9, 2008
    Date of Patent: January 10, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe, Junichi Koezuka, Kaoru Kato
  • Patent number: 8080811
    Abstract: An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: December 20, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kohei Yokoyama, Takahiro Ibe, Takuya Tsurume, Koichiro Tanaka
  • Publication number: 20110284913
    Abstract: To provide a light-emitting device from which uniform light emission can be obtained by providing an auxiliary wiring; a light-emitting device in which a short circuit between electrodes or between an electrode and an auxiliary wiring, which is attributed to a step caused by the auxiliary wiring, hardly occurs; and a light-emitting device which has high reliability by preventing a short circuit. In an EL light-emitting device including an auxiliary wiring, by covering a step caused by the auxiliary wiring is covered with an insulator, a short circuit between electrodes or between an electrode and the auxiliary wiring, which is attributed to the step caused by the auxiliary wiring, is prevented. Thus, the above objects are achieved.
    Type: Application
    Filed: May 19, 2011
    Publication date: November 24, 2011
    Inventors: Takahiro Ibe, Hisao Ikeda
  • Publication number: 20110279029
    Abstract: To improve an image quality of an organic EL display by utilizing characteristics of a dual emission type organic light emitting element. A display device includes a first substrate over which a plurality of organic light emitting elements are provided and a second substrate over which an organic light emitting element is provided. The first and second substrates are facing each other. At least either the organic light emitting elements provided over the first substrate or the organic light emitting element provided over the second substrate emit/emits light toward both surfaces of the first or second substrate. Light emitting regions of the organic light emitting elements provided over the first substrate are overlapped with a light emitting region of the organic light emitting element provided over the second substrate as seen from the second substrate.
    Type: Application
    Filed: July 28, 2011
    Publication date: November 17, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshiharu Hirakata, Takahiro Ibe
  • Patent number: 7999462
    Abstract: To improve an image quality of an organic EL display by utilizing characteristics of a dual emission type organic light emitting element. A display device includes a first substrate over which a plurality of organic light emitting elements are provided and a second substrate over which an organic light emitting element is provided. The first and second substrates are facing each other. At least either the organic light emitting elements provided over the first substrate or the organic light emitting element provided over the second substrate emit/emits light toward both surfaces of the first or second substrate. Light emitting regions of the organic light emitting elements provided over the first substrate are overlapped with a light emitting region of the organic light emitting element provided over the second substrate as seen from the second substrate.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: August 16, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Takahiro Ibe
  • Patent number: 7993945
    Abstract: An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: August 9, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe
  • Publication number: 20110111554
    Abstract: Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: January 18, 2011
    Publication date: May 12, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisao IKEDA, Takahiro IBE, Junichi KOEZUKA, Kaoru KATO
  • Patent number: 7919340
    Abstract: In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: April 5, 2011
    Assignee: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Hisao Ikeda, Takahiro Ibe