Patents by Inventor Takahiro Imai

Takahiro Imai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diamond single crystal substrate manufacturing method
    Patent number: 7771693
    Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 ?m and less than 400 ?m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
    Type: Grant
    Filed: August 15, 2008
    Date of Patent: August 10, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi Meguro, Yoshiyuki Yamamoto, Takahiro Imai
  • Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
    Patent number: 7737614
    Abstract: An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties.
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: June 15, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akihiko Ueda, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Takahiro Imai
  • SINGLE CRYSTALLINE DIAMOND AND PRODUCING METHOD THEREOF
    Publication number: 20100111812
    Abstract: The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 ?m at maximum per a thickness of 100 ?m across an entire of the single crystalline diamond, and also a method for producing the diamond.
    Type: Application
    Filed: January 8, 2010
    Publication date: May 6, 2010
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi MEGURO, Yoshiyuki Yamamoto, Takahiro Imai
  • Electron emitting device with projection comprising base portion and electron emission portion
    Patent number: 7710013
    Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: May 4, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Natsuo Tatsumi, Akihiko Namba, Yoshiki Nishibayashi, Takahiro Imai
  • SI-O CONTAINING HYDROGENATED CARBON FILM, OPTICAL DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SI-O CONTAINING HYDROGENATED CARBON FILM AND THE OPTICAL DEVICE
    Publication number: 20100039707
    Abstract: An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.
    Type: Application
    Filed: October 31, 2007
    Publication date: February 18, 2010
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshihiro Akahane, Takahiro Imai, Takashi Matsuura, Tetsuya Katayama, Toshihiko Ushiro
  • Single crystalline diamond and producing method thereof
    Patent number: 7655208
    Abstract: The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 ?m at maximum per a thickness of 100 ?m across an entire of the single crystalline diamond, and also a method for producing the diamond.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: February 2, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi Meguro, Yoshiyuki Yamamoto, Takahiro Imai
  • Single crystal diamond
    Patent number: 7615203
    Abstract: A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular linearly polarized light beams, the phase difference between the two mutually perpendicular linearly polarized light beams exiting another main surface on the opposite side is, at a maximum, not more than 50 nm per 100 ?m of crystal thickness over the entire crystal. This single crystal diamond is of a large size and high quality unattainable up to now, and has characteristics that are extremely desirable in semiconductor device substrates and are applied to optical components of which low strain is required.
    Type: Grant
    Filed: May 26, 2005
    Date of Patent: November 10, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiyuki Yamamoto, Kiichi Meguro, Takahiro Imai
  • Rubber injection molding device and rubber product manufacturing method
    Patent number: 7615181
    Abstract: A rubber injection molding device comprising: a mold having a molding cavity therein; an injecting machine including an injection cylinder having an injection chamber for storing a rubber therein, and an injection plunger for injecting the rubber from the injection chamber into the molding cavity by means of an advancement of the injection plunger; a feed machine having a feed cylinder with a feed aperture formed at a tip end thereof and connected with the injection chamber through a feed duct, and being adapted to feed into the injection chamber, through the feed duct the rubber in a mixed state, and a pushing assembly which pushes into the injection chamber the rubber that remains within the feed duct after a feed operation of the rubber by the feed machine. A manufacturing method of a rubber product by using the molding device is also disclosed.
    Type: Grant
    Filed: September 13, 2005
    Date of Patent: November 10, 2009
    Assignees: Tokai Rubber Industries, Ltd., Sanyu Industries, Ltd.
    Inventors: Yukio Inukai, Shigeki Kato, Takahiro Aoi, Norihito Kimura, Takahiro Imai, Yuki Akatsuka, Masami Ono
  • Optical Thin Film, Optical Device and Method of Manufacturing the Same
    Publication number: 20090269576
    Abstract: In an optical thin film of the present invention, a hydrogenated carbon film containing at least carbon and hydrogen as major components is formed on a substrate, and at least one protective layer including one of an oxide film, a nitride film, an oxynitride film, a fluoride film, and a film containing hydrogen and carbon as major components is superposed thereon.
    Type: Application
    Filed: October 24, 2006
    Publication date: October 29, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kazuhiko Oda, Takashi Matsuura, Yoshihiro Akahane, Toshihiko Ushiro, Takahiro Imai
  • Joint connector
    Patent number: 7594830
    Abstract: A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.
    Type: Grant
    Filed: December 15, 2008
    Date of Patent: September 29, 2009
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Masakazu Murakami, Takahiro Imai, Tamaki Takabayashi, Takenobu Yabu, Syougo Tomita, Seiichi Ueno, Katsunori Takeda
  • METHOD FOR SETTING UP DRIVE SIGNAL
    Publication number: 20090207201
    Abstract: A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an average value or a median value of ejection rates for each nozzle relating to a supply of the drive signal under a plurality of conditions; classifying the plurality of nozzles into a plurality of groups based on the average value or the median value of the ejection rates; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.
    Type: Application
    Filed: February 11, 2009
    Publication date: August 20, 2009
    Applicant: Seiko Epson Corporation
    Inventors: Sadaharu KOMORI, Takeshi ITO, Kei HIRUMA, Satoru KATAGAMI, Takahiro IMAI, Toru IGARASHI
  • METHOD FOR SETTING UP DRIVE SIGNAL
    Publication number: 20090201326
    Abstract: A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an ejection rate for each nozzle relating to a supply of the drive signal under a predetermined condition by using a moving average; classifying the plurality of nozzles into a plurality of groups based on the ejection rate calculated by using the moving average of each nozzle; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.
    Type: Application
    Filed: February 5, 2009
    Publication date: August 13, 2009
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Sadaharu KOMORI, Takeshi ITO, Kei HIRUMA, Satoru KATAGAMI, Takahiro IMAI, Toru IGARASHI
  • Intermediates of 2-substituted carbapenem derivatives and process for production thereof
    Patent number: 7563901
    Abstract: The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.
    Type: Grant
    Filed: February 15, 2008
    Date of Patent: July 21, 2009
    Assignee: Meiji Seika Kaisha, Ltd.
    Inventors: Toshiro Sasaki, Takashi Ando, Yasuo Yamamoto, Takahiro Imai, Dai Kubota, Katsuhiko Noguchi, Nobuyuki Hori, Eiki Shitara, Kunio Atsumi, Shohei Yasuda
  • METHOD FOR MANUFACTURING DIAMOND MONOCRYSTAL HAVING A THIN FILM, AND DIAMOND MONOCRYSTAL HAVING A THIN FILM
    Publication number: 20090169814
    Abstract: A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 ?cm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 ?cm or less at 300 K.
    Type: Application
    Filed: December 26, 2007
    Publication date: July 2, 2009
    Inventors: Akihiko Ueda, Kiichi Meguro, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Takahiro Imai
  • DIAMOND ELECTRON RADIATION CATHODE, ELECTRON SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSER
    Publication number: 20090160308
    Abstract: An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.
    Type: Application
    Filed: June 27, 2007
    Publication date: June 25, 2009
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiyuki Yamamoto, Akihiko Ueda, Yoshiki Nishibayashi, Takahiro Imai
  • DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090160307
    Abstract: A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
    Type: Application
    Filed: September 18, 2007
    Publication date: June 25, 2009
    Inventors: Akihiko Ueda, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Takahiro Imai
  • DIAMOND SINGLE CRYSTAL SUBSTRATE
    Publication number: 20090142249
    Abstract: A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
    Type: Application
    Filed: February 3, 2009
    Publication date: June 4, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kiichi MEGURO, Yoshiyuki YAMAMOTO, Takahiro IMAI
  • Method of making diamond product and diamond product
    Patent number: 7534360
    Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: May 19, 2009
    Assignees: Sumitomo Electric Industries, Ltd., Japan Fine Ceramics Center
    Inventors: Yoshiki Nishibayashi, Kiichi Meguro, Takahiro Imai, Yutaka Ando
  • MICROWAVE PLASMA CVD DEVICE
    Publication number: 20090120366
    Abstract: The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like.
    Type: Application
    Filed: January 29, 2007
    Publication date: May 14, 2009
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Akihiko Ueda, Kiichi Meguro, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Takahiro Imai
  • Transparent thin film, optical device and method for manufacturing the same
    Publication number: 20090110891
    Abstract: An optical device includes a transparent thin film containing silicon, oxygen, carbon and hydrogen as main components, wherein the film includes local regions of a relatively high refractive index and local regions of a relatively low refractive index.
    Type: Application
    Filed: August 25, 2006
    Publication date: April 30, 2009
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshihiro Akahane, Kazuhiko Oda, Takashi Matsuura, Toshihiko Ushiro, Takahiro Imai