Abstract: Provided is a production system for producing a hydrocarbon compound, which is a hydrocarbon compound production system capable of managing an environmental load reducing effect derived from a raw material. The hydrocarbon compound production system includes a hydrogen production device that generates hydrogen, a carbon dioxide supply device that supplies a carbon dioxide, and a hydrocarbon compound production device that generates a hydrocarbon compound from each of the hydrogen generated by the hydrogen production device and the carbon dioxide supplied from the carbon dioxide supply device, wherein, on the basis of at least either one of respective environmental indicators of the hydrogen generated by the hydrogen production device and the carbon dioxide supplied from the carbon dioxide supply device, an environmental load level of the hydrocarbon compound generated by the hydrocarbon compound production device is categorized.

Abstract: A synthetic product production system is provided with: a synthesis plant for producing a synthetic product by synthesizing a hydrogen-containing gas and carbon dioxide; and a carbon dioxide supply line for supplying the carbon dioxide to the synthesis plant from a recovery and storage plant including a recovery device for recovering the carbon dioxide from a carbon dioxide-containing gas and an injection facility for fixing the recovered carbon dioxide into a stratum.

Abstract: A synthetic product production system is provided with: a synthesis plant for producing a synthetic product by synthesizing a hydrogen-containing gas and carbon dioxide; and a carbon dioxide supply line for supplying the carbon dioxide to the synthesis plant from a recovery and storage plant including a recovery device for recovering the carbon dioxide from a carbon dioxide-containing gas and an injection facility for fixing the recovered carbon dioxide into a stratum.

Abstract: Abrasion resistant steel having a chemical composition comprising, by mass %, C: 0.10 to 0.20%, Si: 0.01 to 1.20%, Mn: 0.01 to 2.00%, P: less than 0.017%, S: 0.010% or less, Cu: 0.01 to 0.70%, Ni: 0.01 to 1.00%, Cr: 0 to 1.50%, Mo: 0 to 0.80%, W: 0 to 0.50%, Nb: 0 to 0.050%, V: 0 to 0.20%, Ti: 0 to 0.030%, B: 0 to 0.0030%, N: 0.0001 to 0.0070%, Al: 0.001 to 0.10%, Ca: 0 to 0.0050%, Zr: 0 to 0.0050%, Mg: 0 to 0.0050%, REM: 0 to 0.0050%, and a balance of Fe and impurities, having metal structures at a position of ¼ of the thickness from the surface in a thickness direction, which have a total of the area ratios of martensite and lower bainite of 50 to 100% and a prior austenite average grain size of 5 to 23 ?m, and having a Brinell hardness at a position of 1 mm from the surface in the thickness direction of 360 to 440, and a method for producing the same.

Abstract: A video signal transmission system which includes a video transmission apparatus and a main-display apparatus and in which a sub-display apparatus is connectable between the video transmission apparatus and the main-display apparatus is provided. The video transmission apparatus transmits a video signal in which video data of a main-screen and video data of sub-screen is stored collectively. The main display apparatus separate the video data of the main-screen from the received video signal and displays the main-screen. When the sub-display apparatus is connected between the video transmission apparatus and the main-display apparatus, the sub-display apparatus separates the video data of the sub-screen from the video signal received from the video transmission apparatus for another sub-display apparatus on a signal source side and displays the sub-screen and transmits the video signal to the main-display apparatus or another sub-display apparatus on a main-display apparatus side.

Abstract: A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

Abstract: A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

Abstract: A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

Abstract: In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured.

Abstract: A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

Abstract: In order to provide a high tensile strength steel having excellent low temperature toughness and which can withstand large heat input welding, a steel comprises, in mass percent, C: 0.01-0.10%, Si: at most 0.5%, Mn: 0.8-1.8%, P: at most 0.020%, S: at most 0.01%, Cu: 0.8-1.5%, Ni: 0.2-1.5%, Al: 0.001-0.05%, N: 0.0030-0.0080%, O: 0.0005-0.0035%, if necessary at least one of Ti: 0.005-0.03%, Nb: 0.003-0.03%, and Mo: 0.1-0.8%, and a remainder of Fe and impurities, and the N/Al ratio is 0.3-3.0.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced.

Abstract: A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

Abstract: A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.

Abstract: Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm?2 or more to 4.0×1010 cm?2 or less.

Abstract: A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: A semiconductor device and a method of manufacture thereof by forming an amorphous semiconductor film on the surface of an insulative substrate, and irradiating the amorphous semiconductor film with a laser beam to crystallize it to form a polycrystalline semiconductor thin film. A transistor is then formed in the polycrystalline semiconductor thin film. More specifically, a UV-ray is irradiated to the rear face of the insulative substrate or the amorphous semiconductor film to heat the amorphous semiconductor film to a melting temperature or lower. Then a laser beam at a suitable shape selection laser energy density Ec forms the crystal grains with the number of closest crystal grains of 6 most predominantly being irradiated to convert the amorphous semiconductor film into a polycrystalline semiconductor thin film. The thin film transistor formed in this structure has a high yield and is capable of high-speed operation.

Abstract: A steel plate for submerged arc welding having good low temperature toughness at a fusion line vicinity part and a boundary with the base material in HAZ as well as at the base material and the weld metal is provided. The steel plate for submerged arc welding according to the invention contains, by mass, 0.03% to 0.09% C, 1.5% to 2.5% Mn, 0.005% to 0.025% Nb, 0.005% to 0.02% Ti, 0.01% to 0.06% Al, at most 0.0005% B, 0.001% to 0.008% N, at most 0.015% P, at most 0.015% S, and at most 0.006% O, and the balance consists of Fe and impurities. Therefore, the steel plate according to the present invention has good low temperature toughness not only at the fusion line vicinity part and the boundary with a base material in the HAZ but also in the base material and weld metal.