Abstract: A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured.

Abstract: In crystallization of a silicon film by annealing with a linear-shaped laser beam having an ununiform width of the short axis of the beam, the profile (intensity distribution) of the laser beam is evaluated, and the result is fed back to an oscillating condition of the laser beam or an optical condition which projects this onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is produced.

Abstract: The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

Abstract: In a display device which includes MIS transistors having semiconductor layers thereof formed of an amorphous semiconductor and MIS transistors having semiconductor layers thereof including a polycrystalline semiconductor, the present invention can enhance crystallinity of the semiconductor layers formed of the polycrystalline semiconductor when the respective MIS transistors adopt the bottom gate structure.

Abstract: The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction.

Abstract: The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: In order to provide a high tensile strength steel having excellent low temperature toughness and which can withstand large heat input welding, a steel comprises, in mass percent, C: 0.01-0.10%, Si: at most 0.5%, Mn: 0.8-1.8%, P: at most 0.020%, S: at most 0.01%, Cu: 0.8-1.5%, Ni: 0.2-1.5%, Al: 0.001-0.05%, N: 0.0030-0.0080%, O: 0.0005-0.0035%, if necessary at least one of Ti: 0.005-0.03%, Nb: 0.003-0.03%, and Mo: 0.1-0.8%, and a remainder of Fe and impurities, and the N/Al ratio is 0.3-3.0.

Abstract: In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer.

Abstract: Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam.

Abstract: A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.

Abstract: The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

Abstract: In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer.

Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

Abstract: A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.

Abstract: To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.