Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: A reinforcing bar binding machine capable of reliably performing a wire gripping operation includes a first movable gripping member that is displaced in a direction to contact with and separate from one side of a fixed gripping member and a second movable gripping member that is displaced in a direction to contact with and separate from the other side of the fixed gripping member. A bending portion brings the first movable gripping member and the second movable gripping member into and out of contact with the fixed gripping member. The fixed gripping member includes a shaft that rotatably supports the first movable gripping member and the second movable gripping member. Further, the bending portion includes an opening and closing pin that pushes an opening and closing guide hole provided in the first movable gripping member, and an opening and closing guide hole provided in the second movable gripping member.

Abstract: An optical amplifier of the present disclosure includes a Raman amplification unit and a parametric amplification unit that is configured of a second-order nonlinear element including a PPLN waveguide. In the optical amplifier, second harmonic lights are generated from a fundamental wave light having a wavelength that is slightly detuned to a shorter wavelength side with respect to a phase matching wavelength of the second-order nonlinear element, and is utilized as excitation light for the parametric amplification unit. By utilizing the excitation light based on the fundamental wave light of the wavelength detuned from the phase matching wavelength, a phase matching curve can be obtained in a wide band in a difference frequency generation (DFG) process of the second-order nonlinear element. The reduction in conversion efficiency of the wavelength near the excitation light in the parametric amplification unit is compensated by the Raman amplification unit.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: A prophylactic or therapeutic agent for a myopathy, including a miR-33b inhibitor, preferably an antisense oligonucleotide against miR-33b, as an effective component.

Abstract: A photoelectric sensor includes: a first signal processing chain including a first amplifier configured to amplify an output signal from a preamplifier by a first amplification factor A1 and a first binarization circuit configured to binarize an output signal from the first amplifier by a first threshold Vthl; and a second signal processing chain including a second amplifier configured to amplify an output signal from the preamplifier by a second amplification factor A2 and a second binarization circuit configured to binarize an output signal from the second amplifier by a second threshold Vth2. The first threshold and the second threshold, and the first amplification factor and the second amplification factor satisfy the following relational expression: 1 < (Vth2/Vth1) < ? = (A2/A1).

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: To provide a lithium-ion storage battery or electronic device that is flexible and highly safe. One embodiment of the present invention is a flexible storage battery including a positive electrode, a negative electrode, a separator between the positive electrode and the negative electrode, an exterior body that surrounds the positive electrode, the negative electrode, and the separator, and a wiring provided along the exterior body. At least part of the wiring is more easily breakable by deformation than the exterior body. The wiring is more vulnerable to deformation than the exterior body and thus damaged earlier than the exterior body. Damage to the wiring is detected and an alert is sent to a user; thus, the use of the storage battery can be stopped before the exterior body is damaged.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: An object capturing device includes light emission, receiving, and scanning units, and distance calculation, and object determination units. The scanning unit measures light from the emission unit to head toward a measurement target space to perform scanning, and to guide reflected light from the object with respect to the measurement light to the receiving unit. The distance calculation unit calculates a distance to the object in association with a scanning angle of the scanning unit. The object determination unit determines whether the object is a capture target based on whether a scanning angle range within which a difference between distances is equal to or less than a predetermined threshold value corresponding to a reference scanning angle range of the capture target, and a determination of whether intensity distribution of the reflected light within the scanning angle range corresponds to reference intensity distribution of the reflected light from the capture target.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: An object detection device includes: a scanning optical system configured to scan a space by measurement light and guide reflected light from an object; a distance calculation circuit configured to calculate a distance and a direction to the object based on physical relationship between the measurement light and the reflected light; an object determination circuit configured to determine whether the distance and the direction to the object are within a predetermined monitoring region; a signal output circuit configured to output an object detection signal upon determination that the object is within the monitoring region; and a mode switching circuit configured to switch to either a first mode in which it is determined whether the object is within the monitoring region regardless of an intensity of the reflected light and a second mode in which such determination is performed only when the intensity is at or above a predetermined threshold.

Abstract: An object detection device can dynamically set an appropriate object detection region according to a state of an inherently unobstructive moving object. The device includes: an optical scanning unit configured to scan measurement light in a measurement space and to guide reflected light from a reflector; a reflector detection unit configured to detect reflector information including a distance from the device to the reflector, a reflected light intensity, and a scanning direction of the measurement light; a reference body identification unit configured to identify whether the reflector is a predetermined reference body, based on the reflector information; a region defining unit configured to define an object detection region along the reference body, based on the reflector information about the reference body; and an object determination unit configured to determine, as a target object, a reflector that is present in the region and that is not identified as the reference body.

Abstract: A drive apparatus of a hybrid vehicle including a first and second rotors arranged movably in axial direction so as to separate from or approach each other, and a microprocessor. The microprocessor is configured to perform selecting a drive mode from among drive modes including a first mode in which the engine drives a planetary gear mechanism, a second mode in which the engine is stopped, and a third mode in which the engine is driven through the planetary gear mechanism, and controlling a first motor-generator and a clutch mechanism so that the first motor-generator generates regenerative energy when the drive mode is switched from the first mode to the second mode, and then so that the clutch mechanism is engaged and the first motor-generator generates drive torque when the drive mode is switched to the third mode.

Abstract: A transmission including a rotating shaft, a planetary gear mechanism, a friction engagement device disposed on radial outside of a ring gear of the planetary gear mechanism, a plate attached to the ring gear so as to face an outer circumferential surface of the ring gears, and a restriction member attached to the ring gear to restrict a movement of the plate in an axial direction. A first oil hole is formed at the ring gear so as to lead an oil supplied from an oil passage inside the rotating shaft to an outside of the ring gear in the radial direction, and a second oil hole is formed at the plate so as to lead the oil led through the first oil hole to the friction engagement device.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.