Abstract: A drive system of a hybrid vehicle including an internal combustion engine, a first motor-generator, a second motor-generator, a planetary gear mechanism provided in a power transmission path, a clutch mechanism engaging or disengaging a sun gear and ring gear of the planetary gear mechanism, and a microprocessor controlling the clutch mechanism. The microprocessor is configured to determine whether it is necessary to perform a meshing position shifting control for shifting meshing positions of the sun gear and the planetary gear and of the planetary gear and the ring gear, and temporarily disengage the clutch mechanism so as to shift the meshing positions when it is determined that it is necessary to perform the meshing position shifting control while the clutch mechanism is engaged.

Abstract: A drive system of a hybrid vehicle including an internal combustion engine, a first and second motor-generators, a mode change mechanism, a valve unit, an oil pump driven by electric power, and a microprocessor. The microprocessor is configured to control the valve unit and driving electric power for the oil pump in drive mode including the EV mode and not including the HV mode, so as to stop to supply the hydraulic oil to the mode change mechanism and drive the oil pump by a first driving electric power when first travel mode is selected, while so as to supply the hydraulic oil of a hydraulic pressure lower than the predetermined hydraulic pressure to the mode change mechanism and drive the oil pump by a second driving electric power greater than the first driving electric power when second travel mode is selected.

Abstract: A drive system of a hybrid vehicle including an internal combustion engine, a first motor-generator, a power transmission path, a power division mechanism, a second motor-generator, a one-way clutch, a mode change mechanism, and an electronic control unit having a microprocessor and memory. The microprocessor is configured to control the first motor-generator so as to reduce a reaction force acting on the first motor-generator at a time at which a state of the one-way clutch changes from an unlocked state to a locked state, when a drive mode is changed from an EV mode to a HV mode through a start mode by the mode change mechanism.

Abstract: It is an object to provide an axle driving device that can change a deceleration ratio while obtaining a high deceleration ratio, and reduces noise during operation to have high ease of assembly and coolability. A carrier of a planet gear mechanism includes a first plate-like member, a second plate-like member, and a third plate-like member, and the third plate-like member includes the plate-like portion and the second plate-like member, a plurality of stays extended from the plate-like portion and connected to the first plate-like member, and a plurality of stays extended from the plate-like portion and connected to the second plate-like member.

Abstract: To provide a variable axle driving device which can obtain a high deceleration ratio, and which can prevent noise from being easily generated. Provided is an axle driving device which includes a planet gear mechanism. The planet gear mechanism includes first planetary gears, second planetary gears, first stepped gears, and second stepped gears. A driving force is input into a larger gear of each first stepped gear. A smaller gear of each first stepped gear is meshed with a larger gear of each second stepped gear. A smaller gear of each second stepped gear is connected to a first internal gear via the first planetary gear. A larger gear of each second stepped gear is connected to a second internal gear via a second planetary gear.

Abstract: Provided is a frictional engagement device capable of preventing a momentum of oil supplied to a frictional engagement element from becoming excessive even when an outer diameter of the frictional engagement device (a clutch) is large or a rotation speed thereof becomes high due to a centrifugal force in accordance with rotation. When a piston moves toward the engagement position, a canceller spring cover is elastically deformed by a pressing force of the piston acting via a return spring, a contact portion of the canceller spring cover comes into contact with the contacted portion of a clutch hub, and thus an opening/closing portion of a first cooling oil path provided between the contact portion and the contacted portion is closed. Accordingly, the first cooling oil path can be closed through which the oil supplied to a frictional engagement portion flows in accordance with an engagement operation of the clutch.

Abstract: A drive system of a hybrid vehicle including an internal combustion engine, a first motor-generator, a power division mechanism, a speed change mechanism including a second output shaft, a second motor-generator including a third output shaft connected to a power transmission path transmitting a power from the second output shaft to an axle, a one-way clutch interposed between the second output shaft and the third output shaft in the power transmission path, and an electric control unit including a microprocessor to control the speed change mechanism. The speed change mechanism includes a first engagement mechanism and second engagement mechanism, and the microprocessor is configured to control the speed change mechanism so as to disengage one of the first engagement mechanism and the second engagement mechanism in engaged state and engage the other thereof in disengaged state, in accordance with a speed change instruction.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

Abstract: A method of curing a curable composition includes contacting the free-radically curable composition with the solid primer layer thereby causing at least partial curing of the curable composition. The solid primer layer includes a binder material, optional beta-dicarbonyl compound, and an organic peroxide. The curable composition includes at least one free-radically polymerizable compound, a polyvalent metal compound, and a quaternary ammonium halide. The method can be used for adhesive bonding of substrates and preparation of various articles.

Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract: A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

Abstract: A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.