Patents by Inventor Takahiro Kawashima

Takahiro Kawashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210331719
    Abstract: A handhold device of a railcar includes: a frame arranged along a side edge of a specific door opening and connected to a car interior side of a side carshell; a turning mechanism provided at the frame and configured to be turnable about a turning axis extending in an upper-lower direction; and a handle including a base portion connected to the frame through the turning mechanism and a holding portion projecting from the base portion in a direction intersecting with the turning axis. The handle is angularly displaceable about the turning axis between a deployed position where the holding portion is exposed to the specific door opening when viewed from a lateral side of the car body and a storage position where the holding portion is hidden by the side carshell when viewed from the lateral side of the car body.
    Type: Application
    Filed: April 27, 2020
    Publication date: October 28, 2021
    Applicant: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Miwa HATTORI, Takahiro KAWASHIMA, Yu YAMAMOTO
  • Publication number: 20210089365
    Abstract: One embodiment provides an information processing apparatus effective to execute a parallel job in coordination with other information processing apparatuses. In an example, the information processing apparatus includes: a memory configured to store computer readable instructions; and a processor configured to execute the computer readable instructions sored in the memory, the computer readable instructions including: providing an instruction to issue barrier communication of error information; and propagating the error information to each of the other information processing apparatuses based on the instruction for the barrier communication.
    Type: Application
    Filed: July 30, 2020
    Publication date: March 25, 2021
    Applicant: FUJITSU LIMITED
    Inventors: Nobutaka IHARA, Takahiro Kawashima
  • Publication number: 20200269884
    Abstract: A railcar floor structure includes: a plurality of floor panels arranged over an entire length of a passenger room of a railcar in a car longitudinal direction and including respective electric heaters; a wiring duct extending in the car longitudinal direction and arranged between a side bodyshell and car width direction end portions of the floor panels; an electricity supply cable arranged at the wiring duct, electric power being supplied to the electric heaters through the electricity supply cable; and a wire insertion opening formed at a side wall portion of the wiring duct, the side wall portion being located close to the floor panels and extending along the car longitudinal direction, the electricity supply cable passing through the wire insertion opening.
    Type: Application
    Filed: September 11, 2017
    Publication date: August 27, 2020
    Applicant: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Toshinobu TANIGAWA, Takahiro KAWASHIMA, Yasuo ONITAKE
  • Publication number: 20200039540
    Abstract: A heating floor panel unit of a railcar includes: a heater-equipped floor panel; a first flange horizontally projecting from one end of the floor panel in a car longitudinal direction and fixed to a carbody by a fastening member; and a second flange horizontally projecting from the other end of the floor panel in the car longitudinal direction and fixed to the carbody by a fastening member. The first flange and the second flange are located at such a height that upper ends of the fastening members are located below an upper surface of the heater-equipped floor panel. The first flange, as viewed from above, is located in such a manner that a position of the first flange in a direction orthogonal to a direction in which the first flange projects does not overlap a position of the second flange in the orthogonal direction.
    Type: Application
    Filed: September 30, 2016
    Publication date: February 6, 2020
    Applicant: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Toshinobu TANIGAWA, Takahiro KAWASHIMA
  • Patent number: 10530198
    Abstract: An R-T-B based sintered magnet includes a first main surface and a first side surface. The first main surface has a coercivity that is higher than that of the first side surface. ?HcjM?60 kA/m is satisfied, where ?HcjM is a difference in coercivity between a portion having a highest coercivity on the first main surface and a portion having a lowest coercivity on the first main surface. ?HcjG?60 kA/m is satisfied, where ?HcjG is a difference in coercivity between a portion having a highest coercivity on a first cross section and a portion having a lowest coercivity on the first cross section and the first cross section is a cross section parallel to the first main surface and spaced from the first main surface at a predetermined length or more.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: January 7, 2020
    Assignee: TDK CORPORATION
    Inventors: Naoto Tsukamoto, Hiroshi Miyasaka, Makoto Iwasaki, Takahiro Kawashima, Chikara Ishizaka
  • Patent number: 10114774
    Abstract: A data transfer method executed by a processor included in a parallel processing device including a first node and a second node, the data transfer method includes transmitting, by a first processor included in the first node, data and information of a size of the data to the second node by remote direct memory access (RDMA); receiving, by a second processor included in the second node, the data and the information of the size of the data from the first node; writing the received data in a memory; and performing prefetch of at least a part of the data, based on information of a position of a memory area of the memory in which the received data has been written and the information of the size of the data.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: October 30, 2018
    Assignee: FUJITSU LIMITED
    Inventor: Takahiro Kawashima
  • Publication number: 20180085051
    Abstract: A device control apparatus includes: a receiving unit that receives an output signal of a pressure sensor installed in bedding; a determining unit that determines control information corresponding to the output signal from a plurality of sets of control information for device control; and a device control unit that controls a control target device using the control information corresponding to the output signal.
    Type: Application
    Filed: September 25, 2017
    Publication date: March 29, 2018
    Inventors: Takahiro KAWASHIMA, Morito MORISHIMA
  • Patent number: 9929274
    Abstract: Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: March 27, 2018
    Assignees: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima, Genshirou Kawachi
  • Publication number: 20180074983
    Abstract: A data transfer method executed by a processor included in a parallel processing device including a first node and a second node, the data transfer method includes transmitting, by a first processor included in the first node, data and information of a size of the data to the second node by remote direct memory access (RDMA); receiving, by a second processor included in the second node, the data and the information of the size of the data from the first node; writing the received data in a memory; and performing prefetch of at least a part of the data, based on information of a position of a memory area of the memory in which the received data has been written and the information of the size of the data.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 15, 2018
    Applicant: FUJITSU LIMITED
    Inventor: Takahiro Kawashima
  • Patent number: 9805660
    Abstract: A display is provided that includes a display having a light-emitting element and a drive transistor, which supplies a current to the light-emitting element causing the light-emitting element to emit light. The display also includes a signal line driving circuit that supplies a signal voltage applied between a gate and a source of the drive transistor, and a control circuit that calculates an amount of threshold voltage shift of the drive transistor on the basis of an amount of deterioration of a threshold voltage of the drive transistor during a deterioration period, and corrects the signal voltage in accordance with the amount of threshold voltage shift.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 31, 2017
    Assignee: JOLED INC.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima
  • Patent number: 9691906
    Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: June 27, 2017
    Assignee: JOLED INC.
    Inventors: Eiji Takeda, Takahiro Kawashima
  • Publication number: 20170104103
    Abstract: Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 13, 2017
    Applicants: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD
    Inventors: Hiroshi HAYASHI, Takahiro KAWASHIMA, Genshirou KAWACHI
  • Publication number: 20170076846
    Abstract: An R-T-B based sintered magnet includes a first main surface and a first side surface. The first main surface has a coercivity that is higher than that of the first side surface. ?HcjM?60 kA/m is satisfied, where ?HcjM is a difference in coercivity between a portion having a highest coercivity on the first main surface and a portion having a lowest coercivity on the first main surface. ?HcjG?60 kA/m is satisfied, where ?HcjG is a difference in coercivity between a portion having a highest coercivity on a first cross section and a portion having a lowest coercivity on the first cross section and the first cross section is a cross section parallel to the first main surface and spaced from the first main surface at a predetermined length or more.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 16, 2017
    Applicant: TDK CORPORATION
    Inventors: Naoto TSUKAMOTO, Hiroshi MIYASAKA, Makoto IWASAKI, Takahiro KAWASHIMA, Chikara ISHIZAKA
  • Patent number: 9570981
    Abstract: A bidirectional DC-DC converter includes a series circuit of a first winding of a first reactor, a second reactor, and a first switch connected to both ends of a first DC power source, a series circuit of a second switch and a second DC power source connected to both ends of the first switch, a series circuit of a second winding of the first reactor, a third reactor, a first selector switch, and a first diode connected to both ends of a series circuit of the second reactor and the first switch, a series circuit of a second selector switch, a second diode, and the second DC power source connected to both ends of a series circuit of the first selector switch and first diode, and a controller turning on/off the switches and the selector switches.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: February 14, 2017
    Assignees: Sanken Electric Co., Ltd., National University Corporation Shimane University
    Inventors: Hiromitsu Terui, Hideki Asuke, Hideharu Takano, Masayoshi Yamamoto, Takahiro Kawashima
  • Patent number: 9482043
    Abstract: A door main body includes a through hole formed on an end surface located at an end of the door main body in a rotation axis direction of rotation of the door main body, a cable or a hose being inserted through the through hole. A door frame portion includes: a frame opening portion which is formed on a surface opposed to the through hole and has a shape corresponding to a movement trajectory of the through hole when the door main body is opened or closed; and a slide supporting member supporting the cable or the hose extending through the frame opening portion while sliding relative to the frame opening portion.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: November 1, 2016
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takahiro Kawashima, Tsunetoshi Goto, Hiroyuki Hirata
  • Publication number: 20160276492
    Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.
    Type: Application
    Filed: July 1, 2014
    Publication date: September 22, 2016
    Applicant: JOLED INC.
    Inventors: Eiji TAKEDA, Takahiro KAWASHIMA
  • Patent number: 9431468
    Abstract: A thin-film semiconductor device includes a substrate, a second protection layer, and an oxide semiconductor layer between the substrate and the second protection layer. The second protection layer has provided therein at least one through-hole in which an extraction electrode is embedded, the extraction electrode being electrically connected with the oxide semiconductor layer. The second protection layer has film density of 2.80 g/cm3 to 3.25 g/cm3.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: August 30, 2016
    Assignee: JOLED INC.
    Inventors: Takahiro Kawashima, Masanori Miura
  • Patent number: 9431543
    Abstract: A thin-film semiconductor device includes: a substrate; a gate electrode above the substrate; a gate insulation film above the gate electrode; a channel layer above the gate insulation film, the channel layer having a raised part; a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material, and the organic material including silicon, oxygen, and carbon; an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, and comprises at least carbon and silicon that derive from the organic material; and a source electrode and a drain electrode each provided over a top surface and a side surface the channel protection layer, a side surface of the interface layer, a side surface of the raised part of the channel layer, and a top surface of the channel layer.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: August 30, 2016
    Assignees: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima, Genshirou Kawachi
  • Publication number: 20160204139
    Abstract: A thin film transistor substrate includes: a gate electrode and a first electrode of a capacitor formed above a substrate so as to be arranged along a plane of the substrate; a gate insulating film formed on the gate electrode; a semiconductor layer formed on the gate insulating film; an insulating layer formed on the semiconductor layer and above the first electrode so as to expose portions of the semiconductor layer; a source electrode and a drain electrode formed above the insulating layer so as to be connected to the semiconductor layer at the exposed portions of the semiconductor layer; and a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode, and the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.
    Type: Application
    Filed: May 27, 2014
    Publication date: July 14, 2016
    Applicant: JOLED INC.
    Inventors: Yuji KISHIDA, Takahiro KAWASHIMA, Yoshiaki NAKAZAKI
  • Patent number: 9362563
    Abstract: The present invention provides a highly reliable energy storage device capable of preventing a reaction current from flowing in a carbon nanotube electrode by ionizing a catalyst metal or a substrate metal to cause the metal to flow out to an electrolytic solution. An energy storage device of the present invention includes: at least a pair of electrode bodies that are a cathode and an anode; and an electrolytic solution. At least one of the electrode bodies is configured such that a layer of carbon nanotubes is formed on an electric conductor. A coupling region where one ends of the carbon nanotubes are coupled to and electrically connected to the electric conductor and a non-coupling region where ends of the carbon nanotubes are not coupled to the electric conductor are formed on a surface of the electric conductor. The carbon nanotubes having one ends connected to the coupling region are toppled to cover a surface of the non-coupling region.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: June 7, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takuma Asari, Hironori Kumagai, Shigeo Hayashi, Yasuhiro Hashimoto, Takahiro Kawashima