Patents by Inventor Takahiro Kawashima

Takahiro Kawashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190252488
    Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.
    Type: Application
    Filed: January 28, 2019
    Publication date: August 15, 2019
    Inventors: TAKAHIRO KOYANAGI, YUUKO TOMEKAWA, TAKESHI HARADA, YOSHIO KAWASHIMA
  • Publication number: 20190208231
    Abstract: An information processing apparatus which generates free viewpoint video, in which a virtual viewpoint can be changed, using video data shot from a plurality of directions. The apparatus receives, from a video delivery apparatus, video data for generating the free viewpoint video at a predetermined viewpoint, generates the free viewpoint video at the predetermined viewpoint from the video data received from the video delivery apparatus, and carries out control so that when another information processing apparatus, which generates the free viewpoint video at a viewpoint included in a predetermined range from the predetermined viewpoint, is present, communication is carried out with the other information processing apparatus, and the free viewpoint video at the predetermined viewpoint is generated using video data received from the other information processing apparatus.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 4, 2019
    Inventors: Yuma Kitasei, Koji Kawashima, Takahiro Yamazaki
  • Patent number: 10316373
    Abstract: An ionic liquid represented by the following chemical formula, [(CH3)3N(CH2)2OH]+[NH2(CH2)3CH(NH2)COO]?, which provides an ionic liquid capable of dissolving cellulose within twenty-four hours.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: June 11, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takahiro Aoki, Tomoko Kawashima, Haruka Kusukame, Yuko Taniike
  • Publication number: 20190167798
    Abstract: A cellulose membrane according to an embodiment of the present disclosure is a self-supporting cellulose membrane having a thickness of between 20 nm and 1300 nm, inclusive, composed of regenerated cellulose having a weight average molecular weight of 150,000 or more.
    Type: Application
    Filed: January 29, 2019
    Publication date: June 6, 2019
    Inventors: TOMOKO KAWASHIMA, HARUKA KUSUKAME, TAKAHIRO AOKI, YUKO TANIIKE
  • Patent number: 10114774
    Abstract: A data transfer method executed by a processor included in a parallel processing device including a first node and a second node, the data transfer method includes transmitting, by a first processor included in the first node, data and information of a size of the data to the second node by remote direct memory access (RDMA); receiving, by a second processor included in the second node, the data and the information of the size of the data from the first node; writing the received data in a memory; and performing prefetch of at least a part of the data, based on information of a position of a memory area of the memory in which the received data has been written and the information of the size of the data.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: October 30, 2018
    Assignee: FUJITSU LIMITED
    Inventor: Takahiro Kawashima
  • Publication number: 20180085051
    Abstract: A device control apparatus includes: a receiving unit that receives an output signal of a pressure sensor installed in bedding; a determining unit that determines control information corresponding to the output signal from a plurality of sets of control information for device control; and a device control unit that controls a control target device using the control information corresponding to the output signal.
    Type: Application
    Filed: September 25, 2017
    Publication date: March 29, 2018
    Inventors: Takahiro KAWASHIMA, Morito MORISHIMA
  • Patent number: 9929274
    Abstract: Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: March 27, 2018
    Assignees: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima, Genshirou Kawachi
  • Publication number: 20180074983
    Abstract: A data transfer method executed by a processor included in a parallel processing device including a first node and a second node, the data transfer method includes transmitting, by a first processor included in the first node, data and information of a size of the data to the second node by remote direct memory access (RDMA); receiving, by a second processor included in the second node, the data and the information of the size of the data from the first node; writing the received data in a memory; and performing prefetch of at least a part of the data, based on information of a position of a memory area of the memory in which the received data has been written and the information of the size of the data.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 15, 2018
    Applicant: FUJITSU LIMITED
    Inventor: Takahiro Kawashima
  • Patent number: 9805660
    Abstract: A display is provided that includes a display having a light-emitting element and a drive transistor, which supplies a current to the light-emitting element causing the light-emitting element to emit light. The display also includes a signal line driving circuit that supplies a signal voltage applied between a gate and a source of the drive transistor, and a control circuit that calculates an amount of threshold voltage shift of the drive transistor on the basis of an amount of deterioration of a threshold voltage of the drive transistor during a deterioration period, and corrects the signal voltage in accordance with the amount of threshold voltage shift.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 31, 2017
    Assignee: JOLED INC.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima
  • Patent number: 9691906
    Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: June 27, 2017
    Assignee: JOLED INC.
    Inventors: Eiji Takeda, Takahiro Kawashima
  • Publication number: 20170104103
    Abstract: Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 13, 2017
    Applicants: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD
    Inventors: Hiroshi HAYASHI, Takahiro KAWASHIMA, Genshirou KAWACHI
  • Publication number: 20170076846
    Abstract: An R-T-B based sintered magnet includes a first main surface and a first side surface. The first main surface has a coercivity that is higher than that of the first side surface. ?HcjM?60 kA/m is satisfied, where ?HcjM is a difference in coercivity between a portion having a highest coercivity on the first main surface and a portion having a lowest coercivity on the first main surface. ?HcjG?60 kA/m is satisfied, where ?HcjG is a difference in coercivity between a portion having a highest coercivity on a first cross section and a portion having a lowest coercivity on the first cross section and the first cross section is a cross section parallel to the first main surface and spaced from the first main surface at a predetermined length or more.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 16, 2017
    Applicant: TDK CORPORATION
    Inventors: Naoto TSUKAMOTO, Hiroshi MIYASAKA, Makoto IWASAKI, Takahiro KAWASHIMA, Chikara ISHIZAKA
  • Patent number: 9570981
    Abstract: A bidirectional DC-DC converter includes a series circuit of a first winding of a first reactor, a second reactor, and a first switch connected to both ends of a first DC power source, a series circuit of a second switch and a second DC power source connected to both ends of the first switch, a series circuit of a second winding of the first reactor, a third reactor, a first selector switch, and a first diode connected to both ends of a series circuit of the second reactor and the first switch, a series circuit of a second selector switch, a second diode, and the second DC power source connected to both ends of a series circuit of the first selector switch and first diode, and a controller turning on/off the switches and the selector switches.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: February 14, 2017
    Assignees: Sanken Electric Co., Ltd., National University Corporation Shimane University
    Inventors: Hiromitsu Terui, Hideki Asuke, Hideharu Takano, Masayoshi Yamamoto, Takahiro Kawashima
  • Patent number: 9482043
    Abstract: A door main body includes a through hole formed on an end surface located at an end of the door main body in a rotation axis direction of rotation of the door main body, a cable or a hose being inserted through the through hole. A door frame portion includes: a frame opening portion which is formed on a surface opposed to the through hole and has a shape corresponding to a movement trajectory of the through hole when the door main body is opened or closed; and a slide supporting member supporting the cable or the hose extending through the frame opening portion while sliding relative to the frame opening portion.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: November 1, 2016
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takahiro Kawashima, Tsunetoshi Goto, Hiroyuki Hirata
  • Publication number: 20160276492
    Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.
    Type: Application
    Filed: July 1, 2014
    Publication date: September 22, 2016
    Applicant: JOLED INC.
    Inventors: Eiji TAKEDA, Takahiro KAWASHIMA
  • Patent number: 9431468
    Abstract: A thin-film semiconductor device includes a substrate, a second protection layer, and an oxide semiconductor layer between the substrate and the second protection layer. The second protection layer has provided therein at least one through-hole in which an extraction electrode is embedded, the extraction electrode being electrically connected with the oxide semiconductor layer. The second protection layer has film density of 2.80 g/cm3 to 3.25 g/cm3.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: August 30, 2016
    Assignee: JOLED INC.
    Inventors: Takahiro Kawashima, Masanori Miura
  • Patent number: 9431543
    Abstract: A thin-film semiconductor device includes: a substrate; a gate electrode above the substrate; a gate insulation film above the gate electrode; a channel layer above the gate insulation film, the channel layer having a raised part; a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material, and the organic material including silicon, oxygen, and carbon; an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, and comprises at least carbon and silicon that derive from the organic material; and a source electrode and a drain electrode each provided over a top surface and a side surface the channel protection layer, a side surface of the interface layer, a side surface of the raised part of the channel layer, and a top surface of the channel layer.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: August 30, 2016
    Assignees: JOLED INC., PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
    Inventors: Hiroshi Hayashi, Takahiro Kawashima, Genshirou Kawachi
  • Publication number: 20160204139
    Abstract: A thin film transistor substrate includes: a gate electrode and a first electrode of a capacitor formed above a substrate so as to be arranged along a plane of the substrate; a gate insulating film formed on the gate electrode; a semiconductor layer formed on the gate insulating film; an insulating layer formed on the semiconductor layer and above the first electrode so as to expose portions of the semiconductor layer; a source electrode and a drain electrode formed above the insulating layer so as to be connected to the semiconductor layer at the exposed portions of the semiconductor layer; and a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode, and the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.
    Type: Application
    Filed: May 27, 2014
    Publication date: July 14, 2016
    Applicant: JOLED INC.
    Inventors: Yuji KISHIDA, Takahiro KAWASHIMA, Yoshiaki NAKAZAKI
  • Patent number: 9362563
    Abstract: The present invention provides a highly reliable energy storage device capable of preventing a reaction current from flowing in a carbon nanotube electrode by ionizing a catalyst metal or a substrate metal to cause the metal to flow out to an electrolytic solution. An energy storage device of the present invention includes: at least a pair of electrode bodies that are a cathode and an anode; and an electrolytic solution. At least one of the electrode bodies is configured such that a layer of carbon nanotubes is formed on an electric conductor. A coupling region where one ends of the carbon nanotubes are coupled to and electrically connected to the electric conductor and a non-coupling region where ends of the carbon nanotubes are not coupled to the electric conductor are formed on a surface of the electric conductor. The carbon nanotubes having one ends connected to the coupling region are toppled to cover a surface of the non-coupling region.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: June 7, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Takuma Asari, Hironori Kumagai, Shigeo Hayashi, Yasuhiro Hashimoto, Takahiro Kawashima
  • Patent number: 9302684
    Abstract: A railcar door apparatus includes: a side sliding door that opens and closes an opening of a side bodyshell of a railcar; a first elastic member attached vertically to an end of the door; and a second elastic member opposed to the first so they do not touch when the door is closed. The first elastic member includes a first base portion and a first projecting wall portion projecting from the base toward the second elastic member; the second elastic member includes a second base portion and a second projecting wall portion projecting from the base toward the first elastic member; when the door is closed, a gap space is formed between the first and second elastic members, and the projecting wall portions overlap; and vertical grooves or projections are formed on the outside of at least one of the projecting wall portions, the outer surface facing the gap space.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: April 5, 2016
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Takahiro Kawashima, Tsunetoshi Goto, Hiroyuki Hirata