Abstract: A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.

Abstract: Disclosed is calcium carbonate treated with a curing active ingredient, which, when compounded in a rubber, enables to provide good workability (handling) to the rubber and maximize advantageous properties of the rubber attributable to calcium carbonate (e.g., slip resistance) without deteriorating the reinforcing property of the rubber. The calcium carbonated treated with a curing active ingredient is produced by mixing a modified calcium carbonate having its surface treated with a fatty acid or a resin acid and silicic acid and having an average primary particle diameter of 0.01 to 0.5 ?m with a curing active ingredient which takes a liquid form at ambient temperature so that the content of the curing active ingredient in the finished product becomes 9.1 to 35 wt %.

Abstract: A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions; an upper electrode, functioning as the other of the source and drain regions; a gate electrode for controlling the electric conductivity of at least a portion of the bundle of linear structures included in the active region; and a gate insulating film arranged between the active region and the gate electrode to electrically isolate the gate electrode from the bundle of linear structures. The transistor further includes a dielectric portion between the upper and lower electrodes. The upper electrode is located over the lower electrode with the dielectric portion interposed and includes an overhanging portion sticking out laterally from over the dielectric portion. The active region is located right under the overhanging portion of the upper electrode.

Abstract: An oil pan structure for an internal combustion engine includes an oil pan and a baffle plate provided inside the oil pan having a storage section for collecting oil that is returned after circulating through the engine to lubricate and cool the engine. The storage section has a generally flat bottom with a generally rectangular shape as viewed in a plan view, and front, left, and right side walls that extend upward from the bottom. The storage section also has an oil drain port through which the oil in the storage section is drained into the oil pan. The opening of oil drain port is near and faces a wall of the oil pan.

Abstract: In a speech processor incorporated into a communication terminal device, an extractor extracts speech characteristics data (e.g. voiceprint data) from speech signals input thereto; then, a speech signal processing module processes input speech signals in accordance with signal processing parameters, which are stored in a memory in relation to preset speech characteristics data in advance. A parameter setting device selects one of preset speech characteristics data having a similarity with the extracted speech characteristics data so as to set the corresponding signal processing parameters stored in the memory to the speech signal processing module. Thus, the communication terminal device is capable of appropriately processing input speech signals so as to enhance specific ranges or to adjust the volume of input speech.

Abstract: A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

Abstract: A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner.

Abstract: A voice converting apparatus is constructed for converting an input voice into an output voice according to a target voice. The apparatus includes a storage section, an analyzing section including a characteristic analyzer, a producing section, a synthesizing section, a memory, an alignment processor, and target decoder.

Abstract: A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.

Abstract: An integrated circuit for analog-to-digital conversion for performing digital conversion of the amount of current of an input current and outputting a digital signal, comprises: a resistor connection terminal to be connected to a resistor; a conversion section configured to convert the amount of current of the input current or the amount of current of a reference current flowing through the resistor into a digital signal to be output; and a compensation section configured to compensate the digital signal corresponding to the input current based on the digital signal corresponding to the reference current.

Abstract: A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.

Abstract: Music piece sequence data are composed of a plurality of event data which include performance event data and user event data designed for linking a voice to progression of a music piece. A plurality of voice data files are stored in a memory separately from the music piece sequence data. In music piece reproduction, the individual event data of the music piece sequence data are sequentially read out, and a tone signal is generated in response to each readout of the performance event data. In the meantime, a voice reproduction instruction is output in response to each readout of the user event data. In accordance with the voice reproduction instruction, a voice data file is selected from among the voice data files stored in the memory, and a voice signal is generated on the basis of each read-out voice data.

Abstract: An integrated circuit for optical disc comprising for each of light-receiving surfaces: an operational amplifier including inverting and noninverting input terminals receiving first and second input voltages, and output terminal receiving output voltage; a feedback resistor connected between the inverting input and output terminals; a photodiode connected between one power supply line of the first and second power supply lines and the inverting input terminal to generate current corresponding to reflected light; a capacitor connected between the one power supply line and the noninverting input terminal; and an input resistor connected between reference power source and the noninverting input terminal, further comprising: an adder adding voltages corresponding to the output voltages to generate RF signal, capacitance of the capacitor and resistance value of the input resistor being determined in accordance with capacitance of parasitic capacitor connected in parallel with the photodiode and resistance value of

Abstract: A field-effect transistor includes a semiconductor layer (14), a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor layer (14), and a gate electrode (12) for applying an electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.

Abstract: A data format of music sequence data represents a music piece and enables a compatible sound generating apparatus to reproduce the music piece at a first quality while allowing a non-compatible sound generating apparatus to reproduce the music piece at a second quality different from the first quality. The music sequence data is composed of event data and timing data. The event data represents various types of musical events occurring during the course of reproducing the music piece. The timing data specifies occurrence timing of each musical event.

Abstract: There is provided a novel music data compression method which is capable of significantly reducing the size of music data. Music data including a sequence of performance event data each formed of note information is received. Each of the pieces of performance event information of the music data is converted to another form of performance event information including status information corresponding to a matching or mismatching pattern in note information between the piece of performance event information and an immediately preceding one of the pieces of performance event information, and note information necessitated according to the matching or mismatching pattern to which the status information corresponds.

Abstract: In a field effect transistor, an Si layer 11, an SiC (Si1?yCy) channel layer 12, a CN gate insulating film 13 made of a carbon nitride layer (CN) and a gate electrode 14 are deposited in this order on an Si substrate 10. The thickness of the SiC channel layer 12 is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region 15 and a drain region 16 are formed on opposite sides of the SiC channel layer 12, and a source electrode 17 and a drain electrode 18 are provided on the source region 15 and the drain region 16, respectively.

Abstract: A music apparatus has a data storage, a controller and a sound generator for reproducing a music sound and a voice sound. The data storage stores a music data file containing a music part and a voice part, the music part containing a sequence of music generation events effective to instruct generation of the music sound, the voice part containing voice reproduction sequence data composed of a combination of voice reproduction event data and duration data, the voice reproduction event data instructing reproduction of a sequence of voice events, the duration data specifying a timing of effecting a voice event in terms of a duration time measured from another voice event preceding to the voice event. The controller reads out the music data file from the data storage.

Abstract: A bipolar transistor 120 comprises a substrate 1, a intrinsic base region 11 and an extrinsic base region 12. The intrinsic base region 11 comprises a silicon buffer layer 109 comprised of silicon which is formed on the substrate 1, and a composition-ratio graded base layer 111 which is formed on the silicon buffer layer and comprises silicon and at least germanium and where a composition ratio of the germanium to the silicon varies in a thickness direction of the composition-ratio graded base layer 111. The extrinsic base region 12 comprises an extrinsic base formation layer 113 comprised of silicon which is formed on the substrate and adjacent to the silicon buffer layer. And the thickness of the extrinsic base formation layer 113 is not less than 40 nm.

Abstract: A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.