Abstract: The present invention relates to an ink-jet printing method that is capable of obtaining good printed materials that are free of occurrence of color migration and deformation of a printing medium even when printed on a resin printing medium. The present invention provides an ink-jet printing method using a water-based ink containing a black ink, a chromatic ink and a white ink which each contain a pigment (A), an organic solvent (C) having a boiling point of not lower than 90° C. and lower than 250° C.

Abstract: A laminated coil component includes an element assembly formed by laminating a plurality of insulation layers and a coil unit formed inside the element assembly by a plurality of coil conductors. The element assembly includes a coil unit arrangement layer which has the coil unit arranged therein, and at least a pair of shape retention layers which is provided to have the coil unit arrangement layer interposed therebetween to retain a shape of the coil unit arrangement layer. The shape retention layer is made from glass-ceramic containing SrO, and a softening point of the coil unit arrangement layer is lower than a softening point or a melting point of the shape retention layer.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: To provide a highly flexible display device excellent in mass-productivity. A display device includes a flexible substrate, an adhesive layer over the substrate, a resin layer over the adhesive layer, an inorganic insulating layer over the resin layer, a transistor over the inorganic insulating layer, and a display element electrically connected to the transistor. The transistor includes an oxide semiconductor in a channel formation region. The resin layer includes sulfur.

Abstract: A hole plug includes: a tubular outer periphery wall portion for insertion into a burring hole formed in an attachment member; an annular flange portion that protrudes toward a radial direction outer side of the outer periphery wall portion, from an end portion side of the outer periphery wall portion at an opposite side from an insertion direction side of the outer periphery wall portion; a pawl portion that projects toward the radial direction outer side from the outer periphery wall portion; a closure portion that extends between inner sides of the outer periphery wall portion; and an abutting portion provided at at least one of the flange portion or the outer periphery wall portion, the abutting portion overlapping with a periphery edge portion of the burring hole as seen in the insertion direction, and the abutting portion configured to abut the periphery edge portion.

Abstract: A ferrite composition main component includes between 44.0 to 50.0 mol % of an Fe compound in terms of Fe2O3, between 5.5 to 14.0 mol % of a Cu compound in terms of CuO, between 4.0 to 39.0 mol % of a Zn compound in terms of ZnO, and a balance less than 40.0 mol % of a Ni compound in terms of NiO, The subcomponent includes, with respect to 100 parts by weight of the main component, between 3.0 parts to 13.0 parts by weight of an Si compound in terms of SiO2, between 2.0 to 10.0 parts by weight of a Co compound in terms of Co3O4, and between 0.25 to 5.00 parts by weight of a Bi compound in terms of Bi2O3. (The content of the Co compound in terms of Co3O4)/(the content of the Si compound in terms of SiO2) in weight ratio is 0.4 to 2.9.

Abstract: The local air cleaning apparatus 1 causes a cleaned uniform air flow blown out from an air flow opening face 23 to collide with an air collision face W to flow outside an open region, so as to cause cleanliness to be higher inside a guide 3 and inside the open region than other regions. Additionally, the apparatus 1 includes at least one of a device for measuring pressures inside the guide 3 and inside a push hood 2, a device for measuring the cleanliness inside the guide 3 or of the open region, and a device for measuring a gap area between the guide 3 and the air collision face W, and, to ensure the cleanliness from a result of the measurement, controls such that a flow velocity of the cleaned uniform air flow blown out from the air flow opening face 23 can be decelerated or accelerated.

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract: The present invention provides a molding apparatus that performs a molding process for molding a composition on a substrate using a mold, including a holding unit configured to hold the substrate, and a control unit configured to control the molding process, wherein the control unit starts a process for pressing the mold against the composition on the substrate while the substrate is held by the holding unit with a first holding force, causes the holding unit to hold the substrate with a second holding force smaller than the first holding force after the process is started, and maintains the holding of the substrate by the holding unit with the second holding force until completion of filling of the composition on the substrate into the mold.

Abstract: The present invention relates to [1] a process for producing pigment-containing modified polymer particles, including the step of reacting pigment-containing polymer particles (A) containing a functional group and a compound (B) containing a reactive group capable of reacting with the functional group of the polymer particles (A) in a medium under such a condition that a ratio [(B)/(A)] of total moles of the reactive group of the compound (B) to total moles of the functional group of the polymer particles (A) is from 0.10 to 0.62; [2] a pigment water dispersion including an aqueous medium and the modified polymer particles produced by the aforementioned process which are dispersed in the aqueous medium; and [3] an ink including the aforementioned pigment water dispersion and an organic solvent.

Abstract: An RFID data management device includes an RFID data acquisition unit acquiring RFID management data including identification information of an RFID, a relevant data acquisition unit acquiring RFID relevant data including a use start date of the RFID, and a remaining time calculation unit calculating a remaining data guarantee time of the RFID using a data guarantee period dependent on the identification information and the environmental temperature of the RFID, and the environmental temperature. The remaining time calculation unit calculates the remaining time using an environmental temperature in a first period from a manufacturing date of the RFID to a use start timing, a data guarantee period according to the environmental temperature in the first period, an environmental temperature in a second period from the use start timing to a timing of confirmation, and a data guarantee period according to the environmental temperature in the second period.

Abstract: The present invention relates to an aqueous gravure ink containing a pigment, a polymer, a water-soluble organic solvent, a surfactant and water, in which the water-soluble organic solvent contains a glycol ether having a boiling point of from 100 to 260° C., and a content of the glycol ether in the ink is from 1 to 10% by mass; a total content of the water-soluble organic solvent in the ink is not more than 15% by mass; the surfactant contains an acetylene glycol-based surfactant; and a content of water in the ink is from 50 to 70% by mass.

Abstract: A surface acoustic wave resonator includes: a piezoelectric substrate; a plurality of metal structures formed on a top surface of the piezoelectric substrate to have a negative profile; and a temperature compensation layer covering the top surface of the piezoelectric substrate and the plurality of metal structures. The surface acoustic wave resonator according to an embodiment of the present invention has a frequency characteristic insensitive to change of profile and has an effect of having a high semi-resonance Q value characteristic.

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract: A receiving device performs, in an equalization processing circuit that performs an equalizing process for a received signal sequence and outputs a sequence to be demodulated, a first transmission-path estimating process of generating a first compensation coefficient indicating a propagation coefficient of a transmission path of a received signal, based on a preamble sequence, a second transmission-path estimating process of generating a second compensation coefficient from a received header-replica sequence generated by performing demodulation and modulation for a header sequence included in a first equalizer-compensated output sequence in which distortion has been compensated based on the first compensation coefficient, a third transmission-path estimating process of generating a third compensation coefficient by synthesizing the first and second compensation coefficients with each other, and a propagation-path compensating process of performing a distortion compensating process for a payload sequence inclu

Abstract: In a multilayer coil component, a ferrite element body includes a first element body portion and a second element body portion adjacent to each other in an axial direction of the multilayer coil, in which a dielectric constant of the second element body portion is lower than a dielectric constant of the first element body portion, and a magnetic permeability of the second element body portion is higher than a magnetic permeability of the first element body portion. The inventors newly found that the first element body portion and the second element body portion contribute to coil characteristics when a coil winding portion is provided to extend over the first element body portion and the second element body portion. In the multilayer coil component, desired coil characteristics can be obtained by adjusting proportions of the first element body portion and the second element body portion in the ferrite element body.

Abstract: The inventors have newly found that, even when a composition of a first element body portion and a composition of a second element body portion are different from each other, a high bonding strength at an interface between the first element body portion and the second element body portion can be obtained when both the first element body portion and the second element body portion contain Zn2SiO4 as a constituent component. That is, when the first element body portion and the second element body portion contain Zn2SiO4, a bonding strength at the interface is improved compared to a case in which the first element body portion and the second element body portion do not contain Zn2SiO4.

Abstract: A surface acoustic wave device of a ladder type includes a series resonator and a parallel resonator, in which the parallel resonator includes a first reflector, a second reflector, and a comb-shaped electrode located between the first reflector and the second reflector, and the comb-shaped electrode includes a first section in which electrode fingers are formed at a constant cycle, and a second section in which electrode fingers are formed at a constant cycle different from the cycle of the first section.

Abstract: An air blowing device adapted to be used in such a manner that at least two of the devices are horizontally and/or vertically aligned with each other, thereby to obtain a uniform flow of air in the downstream direction from device to device. An air-permeable front surface (11f) is formed to the blowing device (1) at the downstream side of a rectifier mechanism, and side surface sections (11a) which extend in the upstream direction of the device (1) are formed at both edges of the air-permeable front surface (11f). First ventilation holes (70a) are distributed at the air-permeable front surface (11f), and second ventilation holes (70b) are distributed at the side surface sections (11a).

Abstract: In order to pass a signal having a wide pass bandwidth with respect to a center frequency of a pass band, a surface acoustic wave device includes a first surface acoustic wave element provided with a first pass band; and a second surface acoustic wave element having a second pass band in a high frequency band compared with the first pass band of the first surface acoustic wave element, in which the first surface acoustic wave element and the second surface acoustic wave element have a common input terminal and a common output terminal, and a frequency of a high frequency side of the first pass band of the first surface acoustic wave element is partially overlapped with a frequency of a low frequency side of the second pass band of the second surface acoustic wave element.