Abstract: An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures.

Abstract: According to one embodiment, a video processing device includes a viewer search module, a viewer position estimator, a viewing area parameter calculator, a viewing area controller. The viewer search module is configured to search a viewer using a video taken by a camera, a distance from the display to the viewer being within a search area. The viewer position estimator is configured to estimate a viewing position of the searched viewer. The viewing area parameter calculator is configured to calculate a viewing area parameter for setting a viewing area at the estimated viewing position. The viewing area controller is configured to set the viewing area based on the viewing area parameter when the stereoscopic video is displayed on the display. The search area for the stereoscopic video being displayed on the display is narrower than the search area for the stereoscopic video not being displayed on the display.

Abstract: Disclosed herein is a two-cycle engine that includes an exhaust port which is opened and closed at one end portion in a longitudinal direction of a cylinder; a scavenging port which is opened and closed at the other end portion in the longitudinal direction of the cylinder; and a fuel injection port which injects a fuel into the cylinder provided between the exhaust port and the scavenging port, wherein the fuel begins to be injected in a state in which at least any one of the exhaust port and the scavenging port is opened.

Abstract: According to an embodiment, a video processing apparatus includes a display, an aperture control unit, an observation unit, a viewer detector, a presentation unit, a viewer selection unit, a calculator and a controller. The display is configured to display a plurality of parallax images. The observation unit is configured to obtain an observation image including one or more viewers. The viewer detector is configured to detect positions of the one or more viewers. The viewer selection unit is configured to select one or more viewers in the observation image according to a viewer selection signal. The calculator is configured to calculate a control parameter so that a viewing zone, from which the plurality of parallax images can be seen stereoscopically, is set in areas according to positions of the selected one or more viewers. The controller is configured to control the viewing zone according to the control parameter.

Abstract: According to one embodiment, an information processing apparatus includes a converter, a detector and a first filter processing module. The converter is configured to produce a plurality of decoded pictures at least by decoding and converting a motion picture stream, the motion picture stream generated by encoding a plurality of pixels on a block-by-block basis into pictures. The detector is configured to detect a reference picture from the plurality of decoded pictures, the reference picture comprising a picture that is referred to by another picture of the plurality of decoded pictures at decoding. The first filter processing module is configured to perform image quality improvement processing on the reference picture detected by the detector and not to perform the image quality improvement processing on pictures from the plurality of decoded pictures which are not reference pictures.

Abstract: According to one embodiment, a moving image/picture encoding apparatus of an embodiment comprises an encoded information acquisition module, an encoding complexity calculation module, an encoding complexity conversion module, and a transcode module. The encoded information acquisition module reads MPEG header information from the input stream to acquire information on a quantization scale, generated bits and a picture type for each frame. The encoding complexity calculation module uses the acquired information to calculate, for each of the frames, encoding complexity represented in a form of the product of the quantization scale and the generated bits. The encoding complexity conversion module uses a linear function prepared for each of the picture types to convert the calculated encoding complexity into encoding complexity of H. 264/AVC. The transcode module uses the converted encoding complexity of H. 264/AVC to transcode the input stream into the output stream.

Abstract: According to one embodiment, a moving image/picture encoding apparatus of an embodiment comprises an encoded information acquisition module, an encoding complexity calculation module, an encoding complexity conversion module, and a transcode module. The encoded information acquisition module reads MPEG header information from the input stream to acquire information on a quantization scale, generated bits and a picture type for each frame. The encoding complexity calculation module uses the acquired information to calculate, for each of the frames, encoding complexity represented in a form of the product of the quantization scale and the generated bits. The encoding complexity conversion module uses a linear function prepared for each of the picture types to convert the calculated encoding complexity into encoding complexity of H. 264/AVC. The transcode module uses the converted encoding complexity of H. 264/AVC to transcode the input stream into the output stream.

Abstract: In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.

Abstract: The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.

Abstract: In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.

Abstract: The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.

Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Abstract: A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.

Abstract: In a region where a light-receiving face of a photodiode is located, when a first interconnection and a second interconnection are patterned, respective layers are removed. After a second interlayer insulating film and a cover insulating film are formed respectively as well, respective layers are removed. On the other hand, a protection insulating film is not removed by etching in the region where the light-receiving face of the photodiode is located, and an antireflection coating is still covered with the protection insulating film. Thus, a semiconductor device attaining reduction in the number of process steps without lowering light reflectivity, as well as an optical device can be obtained.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

Abstract: A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer.

Abstract: A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.