Abstract: A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Abstract: An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Abstract: A vapor deposition mask includes a silicon substrate including a first region that has a first thickness and that includes a part in which a plurality of through-holes is arranged, and a second region that is arranged at an outer circumference of the first region and that has a second thickness that is greater than the first thickness. The silicon substrate has an inner wall that constitutes a step between the first region and the second region. An outer edge of the inner wall has a curve portion in a plan view, and the inner wall has a plurality of steps in a cross-section view.

Abstract: A photoelectric conversion n apparatus includes a semiconductor layer having a first surface and a second surface; an avalanche photodiode arranged in the semiconductor layer, an electrode film arranged to contact the first surface such that a Schottky barrier diode is formed in a contact portion with the semiconductor layer; and a wiring structure arranged on a side of the second surface.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer, an avalanche photodiode, an electrode film, and a wiring structure. The semiconductor layer has a first surface and a second surface. The avalanche photodiode is arranged in the semiconductor layer. The electrode film is arranged to contact the first surface. The wiring structure is arranged to contact the second surface. At least part of light from an outside enters the semiconductor layer via the electrode film. The electrode film includes a first electrode film and a second electrode film. The first electrode film is arranged to contact the first surface such that a Schottky barrier diode is formed in a contact portion with the semiconductor layer. The second electrode film contains a material different from the first electrode film and is arranged to overlap the first electrode film.

Abstract: A photoelectric conversion device in which a plurality of pixels are arranged in a semiconductor layer having a first principal surface and a second principal surface is provided. Each of the plurality of pixels includes: an avalanche photodiode arranged in the semiconductor layer; and a Schottky barrier diode constituted by the semiconductor layer and an electrode pattern in contact with the second principal surface. In an orthogonal projection to the second principal surface, the second principal surface has a region overlapping the avalanche photodiode, and the region includes a first region in contact with the electrode pattern and a second region in contact with an insulating layer.

Abstract: A vapor deposition mask made of a semiconductor substrate, comprising a plurality of openings to pass vapor deposition particles, wherein an aperture portion of which opening width is smallest is disposed between an edge of the opening on a vapor deposition source side and an edge of the opening on a substrate side, the opening width on the substrate side is larger than that of the aperture portion, and at least a part of an inner wall of each of the plurality of openings has a uneven shape.

Abstract: A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A deposition mask according to the present invention includes a first substrate that is a single-crystal substrate, wherein a first region that is at least a portion of the first substrate, includes a plurality of rectangular areas each of which has one or a plurality of openings, a substrate thickness in the rectangular area is smaller than a substrate thickness in an area that is a part of the first region and is not the rectangular area, and an angle ?1 between a side of the rectangular area and a cleavage direction of the first substrate is in a range of 0°<?1<90°.

Abstract: A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Abstract: A light-emitting element in which a first member having a light-emitting diode layer formed therein, and a second member having a drive circuit layer formed therein, are stacked and bonded to each other, wherein the light-emitting diode layer and the drive circuit layer are electrically connected by an electrode; the second member includes a light-shielding portion different from the electrode; the light-shielding portion is disposed so as to cover at least part of a first pixel and a second pixel demarcated by an isolation structure provided in the light-emitting diode layer; and a layer that forms the light-emitting diode layer in the first pixel and a layer that forms the light-emitting diode layer in the second pixel are shared.

Abstract: A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Abstract: A vapor deposition mask includes a silicon substrate including a first region that has a first thickness and that includes a part in which a plurality of through-holes is arranged, and a second region that is arranged at an outer circumference of the first region and that has a second thickness that is greater than the first thickness. The silicon substrate has an inner wall that constitutes a step between the first region and the second region. An outer edge of the inner wall has a curve portion in a plan view, and the inner wall has a plurality of steps in a cross-section view.

Abstract: A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Abstract: An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Abstract: The deposition apparatus includes a chamber including a deposition space, a stage that supports a substrate, a light source, a gas supply, and a heater. The light source includes an emission source that emits an energy ray and is disposed to face the deposition space. The gas supply includes a shower plate and a gas diffusion space. The shower plate includes a first surface that faces the light source, a second surface that faces the stage, and a plurality of through-holes that penetrates the first surface and the second surface, the shower plate allowing the energy ray to transmit therethrough. The gas diffusion space faces the first surface and diffuses raw material gas including an energy ray-curable resin that cures when the energy ray-curable resin is irradiated with the energy ray. The gas supply supplies the raw material gas into the deposition space from the gas diffusion space. The heater heats the first surface of the shower plate.

Abstract: A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A light-emitting element in which a first member having a light-emitting diode layer formed therein, and a second member having a drive circuit layer formed therein, are stacked and bonded to each other, wherein the light-emitting diode layer and the drive circuit layer are electrically connected by an electrode; the second member includes a light-shielding portion different from the electrode; the light-shielding portion is disposed so as to cover at least part of a first pixel and a second pixel demarcated by an isolation structure provided in the light-emitting diode layer; and a layer that forms the light-emitting diode layer in the first pixel and a layer that forms the light-emitting diode layer in the second pixel are shared.