Abstract: A vapor deposition mask made of a semiconductor substrate, comprising a plurality of openings to pass vapor deposition particles, wherein an aperture portion of which opening width is smallest is disposed between an edge of the opening on a vapor deposition source side and an edge of the opening on a substrate side, the opening width on the substrate side is larger than that of the aperture portion, and at least a part of an inner wall of each of the plurality of openings has a uneven shape.

Abstract: A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A deposition mask according to the present invention includes a first substrate that is a single-crystal substrate, wherein a first region that is at least a portion of the first substrate, includes a plurality of rectangular areas each of which has one or a plurality of openings, a substrate thickness in the rectangular area is smaller than a substrate thickness in an area that is a part of the first region and is not the rectangular area, and an angle ?1 between a side of the rectangular area and a cleavage direction of the first substrate is in a range of 0°<?1<90°.

Abstract: A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Abstract: A light-emitting element in which a first member having a light-emitting diode layer formed therein, and a second member having a drive circuit layer formed therein, are stacked and bonded to each other, wherein the light-emitting diode layer and the drive circuit layer are electrically connected by an electrode; the second member includes a light-shielding portion different from the electrode; the light-shielding portion is disposed so as to cover at least part of a first pixel and a second pixel demarcated by an isolation structure provided in the light-emitting diode layer; and a layer that forms the light-emitting diode layer in the first pixel and a layer that forms the light-emitting diode layer in the second pixel are shared.

Abstract: A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Abstract: A vapor deposition mask includes a silicon substrate including a first region that has a first thickness and that includes a part in which a plurality of through-holes is arranged, and a second region that is arranged at an outer circumference of the first region and that has a second thickness that is greater than the first thickness. The silicon substrate has an inner wall that constitutes a step between the first region and the second region. An outer edge of the inner wall has a curve portion in a plan view, and the inner wall has a plurality of steps in a cross-section view.

Abstract: A detector that detects or oscillates an electromagnetic wave, the detector including a plurality of antennas having a rectifying element, wherein the plurality of arranged antennas at least include: a first antenna having a first resonant frequency; and a second antenna having a second resonant frequency that differs from the first resonant frequency.

Abstract: An embodiment according to the present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a first region, a second region disposed between the first region and the second electrode, and a third region that is disposed between the second region and the second electrode and that is in contact with the second region, the inorganic ligand ratio in the second region is higher than the inorganic ligand ratio in the first region, the inorganic ligand ratio at the interface of the third region to the second region is lower than the inorganic ligand ratio in the first region, and the inorganic ligand ratio in the second region increases with increasing proximity to the third region.

Abstract: The deposition apparatus includes a chamber including a deposition space, a stage that supports a substrate, a light source, a gas supply, and a heater. The light source includes an emission source that emits an energy ray and is disposed to face the deposition space. The gas supply includes a shower plate and a gas diffusion space. The shower plate includes a first surface that faces the light source, a second surface that faces the stage, and a plurality of through-holes that penetrates the first surface and the second surface, the shower plate allowing the energy ray to transmit therethrough. The gas diffusion space faces the first surface and diffuses raw material gas including an energy ray-curable resin that cures when the energy ray-curable resin is irradiated with the energy ray. The gas supply supplies the raw material gas into the deposition space from the gas diffusion space. The heater heats the first surface of the shower plate.

Abstract: A semiconductor device includes an anode, a cathode, a first functional layer between the anode and cathode, and a second functional layer between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A light-emitting element in which a first member having a light-emitting diode layer formed therein, and a second member having a drive circuit layer formed therein, are stacked and bonded to each other, wherein the light-emitting diode layer and the drive circuit layer are electrically connected by an electrode; the second member includes a light-shielding portion different from the electrode; the light-shielding portion is disposed so as to cover at least part of a first pixel and a second pixel demarcated by an isolation structure provided in the light-emitting diode layer; and a layer that forms the light-emitting diode layer in the first pixel and a layer that forms the light-emitting diode layer in the second pixel are shared.

Abstract: A semiconductor apparatus includes, a substrate having a main surface, an upper electrode disposed above the substrate, a first lower electrode and a second lower electrode disposed between the substrate and the upper electrode, an isolation region disposed between the first lower electrode and the second lower electrode, a functional layer configured to perform light emission or photoelectric conversion, and an interface layer disposed at least on the first lower electrode. The semiconductor apparatus further includes a first insulator portion that is disposed between the first lower electrode and the second lower electrode and includes a first portion disposed at a position farther away from the main surface than an upper surface of the interface layer.

Abstract: A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.

Abstract: An imaging device includes a first substrate including a photoelectric conversion layer that includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type and in which a plurality of photoelectric conversion units are provided; a second substrate that is joined to the first substrate and in which a readout circuit substrate that outputs a signal based on information detected by the plurality of photoelectric conversion units is provided; and an element isolation portion defined by a first opening provided so as to penetrate the second substrate and at least one of the first semiconductor layer and the second semiconductor layer, and each of the plurality of photoelectric conversion units is separated from each other by the element isolation portion.

Abstract: A flow resistant part having a rod shape is disposed in a raw liquid introduction path in a manner such that the raw liquid is sprayed onto a vaporization plate to reduce the conductance of the raw liquid introduction path with respect to the raw liquid. Because the pressure on an outlet side of the liquid mass flow controller is increased, and the pressure difference from the pressure on the inlet side of the liquid mass flow controller is reduced, the occurrence of cavitation can be prevented. A plurality of the flow resistant parts can be provided.

Abstract: An imaging device includes a first substrate including a photoelectric conversion layer that includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type and in which a plurality of photoelectric conversion units are provided; a second substrate that is joined to the first substrate and in which a readout circuit substrate that outputs a signal based on information detected by the plurality of photoelectric conversion units is provided; and an element isolation portion defined by a first opening provided so as to penetrate the second substrate and at least one of the first semiconductor layer and the second semiconductor layer, and each of the plurality of photoelectric conversion units is separated from each other by the element isolation portion.

Abstract: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.