Abstract: A headrest structure and a headrest device, including a bottom plate provided at a lower face of a headrest, and provided with an elongated hole extending in a seat front-rear direction through which a stay is inserted, a guide sheet having the same width as that of the elongated hole, that is longer in length than the elongated hole, whose both end portions are slidably supported by the bottom plate, and that is provided with an elongated guide hole smaller than the elongated hole, a concealing sheet provided with an attachment hole to which the stay is attached, and that is overlapped slidably on an upper face of the guide sheet so as to cover the elongated guide hole, and a wall portion that is formed at the bottom plate, and that restricts movement of the guide sheet and the concealing sheet in a seat width direction, are provided.

Abstract: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.

Abstract: A headrest structure and a headrest device, including a bottom plate provided at a lower face of a headrest, and provided with an elongated hole extending in a seat front-rear direction through which a stay is inserted, a guide sheet having the same width as that of the elongated hole, that is longer in length than the elongated hole, whose both end portions are slidably supported by the bottom plate, and that is provided with an elongated guide hole smaller than the elongated hole, a concealing sheet provided with an attachment hole to which the stay is attached, and that is overlapped slidably on an upper face of the guide sheet so as to cover the elongated guide hole, and a wall portion that is formed at the bottom plate, and that restricts movement of the guide sheet and the concealing sheet in a seat width direction, are provided.

Abstract: There is provided a tonneau cover apparatus including: a winding shaft that winds up a tonneau cover; an elongated shaped case that accommodates the winding shaft; support members provided at one end portion and another end portion of the case, and supporting the winding shaft; a retention member provided at the one end portion and/or the other end portion of the case and including an outer wall portion that covers the support member; and blocking portions provided at the support member and the retention member at the at least one end portion, the blocking portions being disposed at the inner side relative to the outer wall portion, and blocking movement of the retention member outward in the axial direction of the winding shaft from the engaging position by abutting against one another at the engaging position.

Abstract: There is provided a cover coupling structure including: a coupling groove that is provided to an elongated shaped tonneau cover apparatus including a tonneau cover, the coupling groove including a coupling portion coupled to one end of a sheet-form cover, and an opening portion that is open to the outer peripheral side of the tonneau cover apparatus and is in communication with the coupling portion; an anchor portion provided to the one end of the cover and coupling the one end of the cover to the coupling portion by anchoring to the coupling portion; and a resiliently deformable portion that anchors the anchor portion to the coupling portion, and is set with an external profile dimension along a direction orthogonal to a first face of the cover that is larger than the height dimension of the opening portion when the resiliently deformable portion has been resiliently deformed.

Abstract: There is provided a cover coupling structure including: a coupling groove that is provided to an elongated shaped tonneau cover apparatus including a tonneau cover, the coupling groove including a coupling portion coupled to one end of a sheet-form cover, and an opening portion that is open to the outer peripheral side of the tonneau cover apparatus and is in communication with the coupling portion; an anchor portion provided to the one end of the cover and coupling the one end of the cover to the coupling portion by anchoring to the coupling portion; and a resiliently deformable portion that anchors the anchor portion to the coupling portion, and is set with an external profile dimension along a direction orthogonal to a first face of the cover that is larger than the height dimension of the opening portion when the resiliently deformable portion has been resiliently deformed.

Abstract: There is provided a tonneau cover apparatus including: a winding shaft that winds up a tonneau cover; an elongated shaped case that accommodates the winding shaft; support members provided at one end portion and another end portion of the case, and supporting the winding shaft; a retention member provided at the one end portion and/or the other end portion of the case and including an outer wall portion that covers the support member; and blocking portions provided at the support member and the retention member at the at least one end portion, the blocking portions being disposed at the inner side relative to the outer wall portion, and blocking movement of the retention member outward in the axial direction of the winding shaft from the engaging position by abutting against one another at the engaging position.

Abstract: A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiF? (440 nm) is not smaller than a luminous intensity attributed to H? (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

Abstract: A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiF? (440 nm) is not smaller than a luminous intensity attributed to H? (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

Abstract: An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.

Abstract: A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.

Abstract: A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

Abstract: In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M+200≦Pd≦160M+333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.

Abstract: The surface shape of a power-applying electrode is altered in agreement with the curving of a substrate so that the electrode-substrate distance can be kept at a constant value. This enables formation of thin films having uniform film thickness in the substrate width direction even when the electrode-substrate distance is shortened in order to make film formation rate higher in deposited-film formation apparatus of a roll-to-roll system.

Abstract: A deposited film forming apparatus is provided which has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member. A deposited film forming method using the apparatus is also provided.

Abstract: A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

Abstract: A method of producing high-frequency modules at a higher efficiency is provided comprising: an electronic components mounting step 62 of fabricating on a master substrate 21 rows of sub substrates 22, each the sub substrate 22 having an identical pattern of circuit developed thereon, and mounting electronic components on the sub substrate 22; a step 64 of, after the step 62, providing slits for electrically isolating signal terminals formed integrally; a laser trimming step 66 of, after the step 64, engaging pins 39 of an inspection tooling in direct contact with the signal terminals to conduct an inspection; and a separating step 72 of, after the step 66, separating the sub substrates 22 from the master substrate 21. Accordingly, the productivity for the high-frequency modules will be improved.

Abstract: A deposited film forming apparatus has a vacuum chamber containing a power applying electrode spaced above a grounded flat plate base member. The power applying electrode is fixed to the base member with a plurality of electrically insulating fastening members, at positions effective to suppress deformation of the power applying electrode, wherein an electrically insulating spacer is placed between the power supplying electrode and the base member to electrically insulate said power applying electrode from the base member.

Abstract: A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted.

Abstract: The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency.