Patents by Inventor Takahiro Yasue
Takahiro Yasue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8557500Abstract: The present invention provides a salt represented by the formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, L2 represents a single bond or a C1-C6 alkanediyl group in which one or more —CH2— can be replaced by —O— or —CO—, Y represents a C3-C18 alicyclic hydrocarbon group which can have one or more substituents, and one or more —CH2— in the alicyclic hydrocarbon group can be replaced by —O—, —CO— or —SO2—, and Z+ represents an organic counter ion.Type: GrantFiled: February 28, 2012Date of Patent: October 15, 2013Assignee: Sumitomo Chemical Company, LimitedInventors: Koji Ichikawa, Hiromu Sakamoto, Takahiro Yasue
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Publication number: 20130022924Abstract: A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R1, A1, A13, A14, X12, R3, R4, m? and n? are defined in the specification.Type: ApplicationFiled: July 18, 2012Publication date: January 24, 2013Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE
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Patent number: 8338815Abstract: Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes.Type: GrantFiled: August 5, 2010Date of Patent: December 25, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-Sook Lee, Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue
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Publication number: 20120264059Abstract: A resist composition includes (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having a structure to be cleaved by the action of an alkaline developer, and (C) a compound represented by the formula (I), wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.Type: ApplicationFiled: April 6, 2012Publication date: October 18, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE, Tatsuro MASUYAMA
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Publication number: 20120258405Abstract: A resist composition includes; (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator having an acid-labile group; and (D) a compound represented by the formula (I), wherein R1 and R2 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m and n independently represent an integer of 0 to 4.Type: ApplicationFiled: April 6, 2012Publication date: October 11, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE, Satoshi YAMAGUCHI
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Publication number: 20120258404Abstract: A resist composition of the invention includes: (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1, R2, m, n, Q1, Q2, L1, ring W1 and Z+ are defined in the specification.Type: ApplicationFiled: April 6, 2012Publication date: October 11, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE, Satoshi YAMAGUCHI
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Publication number: 20120258401Abstract: A resist composition contains (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), wherein R1 and R2, m and n, R3 and R4, X1, R5 and Z1+ are defined in the specification.Type: ApplicationFiled: April 6, 2012Publication date: October 11, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE, Yuichi MUKAI
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Publication number: 20120225385Abstract: The present invention provides a salt represented by the formula (I): wherein Q1 and Q2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group, L1 represents a C1-C17 divalent saturated hydrocarbon group in which one or more —CH2— can be replaced by —O— or —CO—, L2 represents a single bond or a C1-C6 alkanediyl group in which one or more —CH2— can be replaced by —O— or —CO—, Y represents a C3-C18 alicyclic hydrocarbon group which can have one or more substituents, and one or more —CH2— in the alicyclic hydrocarbon group can be replaced by —O—, —CO— or —SO2—, and Z+ represents an organic counter ion.Type: ApplicationFiled: February 28, 2012Publication date: September 6, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Hiromu SAKAMOTO, Takahiro YASUE
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Publication number: 20120219908Abstract: A resist composition of the present invention has (A1) a resin having a structural unit represented by the formula (I), (A2) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator and (D) a compound represented by the formula (II). wherein R1 represents a hydrogen atom or a methyl group; A1 represents a C1 to C6 alkanediyl group; R2 represents a C1 to C10 hydrocarbon group having a fluorine atom, R3 and R4 in each occurrence independently represent a C1 to C12 hydrocarbon group, a C1 to C6 alkoxyl group, a C2 to C7 acyl group, a C2 to C7 acyloxy group, a C2 to C7 alkoxycarbonyl group, a nitro group or a halogen atom; m? and n? independently represent an integer of 0 to 4.Type: ApplicationFiled: February 24, 2012Publication date: August 30, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE
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Publication number: 20120219907Abstract: A resist composition contains (A) a resin having a structural unit represented by the formula (I), (B) an acid generator and (D) a compound represented by the formula (II), wherein R1, ring X1, R3, R4, m, and n are defined in the specification.Type: ApplicationFiled: February 24, 2012Publication date: August 30, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Takahiro YASUE, Akira KAMABUCHI
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Publication number: 20120028188Abstract: The present invention provides a photoresist composition comprising a resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.Type: ApplicationFiled: July 25, 2011Publication date: February 2, 2012Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Koji ICHIKAWA, Mitsuhiro HATA, Takahiro YASUE
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Patent number: 8105697Abstract: Provided is a polymer memory device and a method of forming the same. The polymer memory device may include a first electrode, a first curable polymer layer, a second electrode, a second curable polymer layer, and a third electrode. The first electrode may be disposed on a substrate. The first curable polymer layer may cover the first electrode. The second electrode may be disposed on the first curable polymer layer and cross over the first electrode. The second curable polymer layer may cover the second electrode. The third electrode may be disposed on the second curable polymer layer and cross over the second electrode. Each of the first curable polymer layer and the second curable polymer layer may contain a fullerene or a fullerene derivative.Type: GrantFiled: October 2, 2007Date of Patent: January 31, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Byeong-Ok Cho, Takahiro Yasue, Moon-Sook Lee
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Publication number: 20110275020Abstract: Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.Type: ApplicationFiled: May 3, 2011Publication date: November 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Subramanya Mayya, Takahiro Yasue, Seok-hwan Oh, Yool Kang
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Patent number: 8013366Abstract: Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.Type: GrantFiled: September 12, 2008Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-Sook Lee, Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue, Jung-Hwan Hah
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Publication number: 20100314600Abstract: Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes.Type: ApplicationFiled: August 5, 2010Publication date: December 16, 2010Inventors: Moon-Sook Lee, Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue
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Patent number: 7790610Abstract: Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes.Type: GrantFiled: December 19, 2008Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Moon-Sook Lee, Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue
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Patent number: 7663141Abstract: An organic memory device may include a stack of an organic material layer and a fullerene layer to provide a data storage element between first and second electrodes. The data storage element may include an organic material layer formed on the first electrode, and a fullerene layer between the organic material layer and the second electrode. Methods of fabricating organic memory devices are also discussed.Type: GrantFiled: March 23, 2007Date of Patent: February 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Byeong-Ok Cho, Moon-Sook Lee, Takahiro Yasue
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Publication number: 20090209071Abstract: First nanowires and second nanowires are alternately disposed and spaced apart on a first substrate in a second direction that is parallel to an adjacent major surface of the first substrate. Each of the first and second nanowires extends in a first direction that is perpendicular to the second direction, and the first and second nanowires are doped with first and second conductive types, respectively.Type: ApplicationFiled: February 18, 2009Publication date: August 20, 2009Inventors: Moon-Sook Lee, Byeong-Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue
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Publication number: 20090189152Abstract: Provided is a ferroelectric memory device. The ferroelectric memory device includes an inorganic channel pattern on a substrate, a source electrode and a drain electrode spaced apart from each other on the substrate and contacting the inorganic channel pattern, a gate electrode disposed adjacent to the inorganic channel pattern, and an organic ferroelectric layer interposed between the inorganic channel pattern and the gate electrode.Type: ApplicationFiled: January 16, 2009Publication date: July 30, 2009Applicant: Samsung Electronics Co., Ltd.Inventors: Byeong-Ok Cho, Moon-Sook Lee, Man-Hyoung Ryoo, Jung-Hyeon Kim, Takahiro Yasue
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Publication number: 20090162998Abstract: Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes.Type: ApplicationFiled: December 19, 2008Publication date: June 25, 2009Inventors: Moon-Sook Lee, Byeong Ok Cho, Man-Hyoung Ryoo, Takahiro Yasue