Abstract: According to one aspect of the invention, there is provided a semiconductor device fabrication method having: forming a film on a semiconductor substrate; forming a mask comprising a predetermined pattern on the film; etching one of the film and the semiconductor substrate by using the mask; and performing at least one of the steps of performing a treatment using one of an aqueous solution of at least one of ammonia and amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine, a treatment using a liquid chemical containing fluorine and at least one of amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine and fluorine, and a treatment using a liquid chemical containing at least ammonia and fluorine and including a pH of not less than 6, particularly, not less than 9.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, forming a film containing impurities on an inner surface of a lower part of the trench, forming a silicon nitride film so that an upper sidewall of the trench is covered by the silicon nitride film, and diffusing the impurities outside the trench by heat treatment.

Abstract: A method of manufacturing a semiconductor device includes forming a trench in a semiconductor substrate, isotropically forming a trench surface insulating film on an inner surface of the trench, the trench surface insulating film including a deep part functioning as a capacitor insulating film, forming a surface layer side insulating film on the inner surface of the trench so that the surface layer side insulating film is continuously rendered thinner from the surface side of the substrate toward the deep side of the trench, and forming an electrode layer inside the surface layer side insulating film and the trench surface insulating film both formed on the inner surface of the trench.

Abstract: An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.

Abstract: According to the present invention, there is provided a semiconductor device fabrication method comprising: forming an interlayer dielectric film on a semiconductor substrate; removing a predetermined region of the interlayer dielectric film, and forming a film by depositing a conductive material on the semiconductor substrate and interlayer dielectric film so as to fill the removed region; planarizing the film such that the film has substantially the same height as the interlayer dielectric film, thereby burying the conductive material to form a first conductive layer; and performing processing using a dilute aqueous choline solution on an upper surface of the buried first conductive layer.

Abstract: An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film, and an upper insulating film provided over the first and second sidewall insulating films.

Abstract: For cleaning a semiconductor wafer without exposing it to the atmosphere, after the semiconductor wafer is placed in a cleaning vessel which is filled with deionized water through a first control valve, a first cleaning fluid is supplied to the cleaning vessel through a second control valve so that the deionized water overflows. A second cleaning fluid is then supplied to the vessel through a third control valve such that the first cleaning fluid overflows to produce a mixed fluid containing the first cleaning fluid, thereby cleaning the semiconductor wafer therein.

Abstract: An apparatus for subjecting a semiconductor substrate to a washing process is equipped with a hermetically closable chamber for a substrate washing process and a washing process bath provided in the chamber to subject the substrate to the washing process. The semiconductor substrate is held in a horizontal state by a substrate support mechanism provided in the substrate washing process bath. A liquid supply mechanism is provided for supplying a liquid at least enough great to allow the semiconductor substrate to be immersed with the liquid. A chemicals liquid vapor and gas for substrate washing are supplied, by a chemicals component supply mechanism, into the chamber for a predetermined time period so that the chemicals liquid vapor and gas are dissolved into the liquid in the process bath to give a solution. The solution thus obtained is replaced by a pure water replacing mechanism with a specific liquid.