Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: A semiconductor light emission device includes a substrate, and semiconductor light emission elements mounted on the substrate and each including an anode connection pad and a cathode connection pad. At least one of the anode connection pad and the cathode connection pad has a fine shaped portion. An image formation apparatus and an image display apparatus are described using the semiconductor light emission device.

Abstract: A wireless communication system includes: a transmitter to transmit information about cells neighboring to a cell in which a wireless communication terminal exists; a receiver to receive the information about the neighboring cells; a first managing unit to manage a count of not being selected as a transition destination cell for each of the neighboring cells; and a second managing unit to manage a rank of each of the neighboring cells as a transition destination candidate cell based on the count of each of the neighboring cells, the second managing unit selecting the transition destination cell based on the rank.

Abstract: A light emitting device includes: a wiring including an AuGeNi layer; and a semiconductor light emitting element bonded to the surface of the AuGeNi layer with the aid of intermolecular force, and electrically connected to the wiring.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release.

Abstract: A light-emitting device includes a substrate; a light-emitting element formed on the substrate; a seal member sealing the light-emitting element, the seal member formed of a transparent dry film resist laminated on the substrate with the light-emitting element interposed therebetween.

Abstract: A mobile terminal, includes: a memory configured to store a cell selection data pattern, the cell selection data pattern being used to select a radio access technology utilized by the mobile terminal, in a manner to associate the cell selection data pattern with an operating state capable of being taken by the mobile terminal; and a processor coupled to the memory, configured to select one of the radio access technologies utilized by the mobile terminal, by using a cell selection data pattern that is selected from the memory based on the operating state of the mobile terminal, and performs connection processing with respect to a cell by using the selected radio access technology.

Abstract: A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.

Abstract: A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.

Abstract: A high-definition, high-intensity display apparatus having a plurality of semiconductor thin film light emitting elements and a plurality of linear electrodes connecting a power source to the light emitting elements, the linear electrodes being disposed so as to minimize the voltage drop across the linear electrodes.

Abstract: A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.

Abstract: A semiconductor composite apparatus, includes a first substrate, a semiconductor thin film layer, active devices, first driving circuits, and second driving circuits. The semiconductor thin film layer is formed on the first substrate and is formed of a first semiconductor material. The active devices are formed in the semiconductor thin film layer. The first driving circuits is formed of a second semiconductor material and performing a first function in which the active devices are driven. The second driving circuits are formed of a third semiconductor material and performing a second function in which the active devices are driven, the second function being different from the first function.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.

Abstract: A wireless communication system includes: a transmitter to transmit information about cells neighboring to a cell in which a wireless communication terminal exists; a receiver to receive the information about the neighboring cells; a first managing unit to manage a count of not being selected as a transition destination cell for each of the neighboring cells; and a second managing unit to manage a rank of each of the neighboring cells as a transition destination candidate cell based on the count of each of the neighboring cells, the second managing unit selecting the transition destination cell based on the rank.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus being formed by bonding semiconductor thin film element on a plastic substrate, a thin film metal layer is formed on surface of the semiconductor thin film element for promoting heat release.

Abstract: A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the substrate, and a second insulation layer disposed between the first insulation layer and the first metal layer.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.

Abstract: A layered semiconductor light emitting device includes a plurality of semiconductor light emitting elements each of which includes a light emitting region that converts electricity into light and emits the light. The semiconductor light emitting elements are layered in a layering direction perpendicular to the light emitting regions, and are bonded to each other via a planarizing layer having electrical insulation property. The planarizing layer includes a first planarizing region disposed above or below the light emitting regions of the semiconductor light emitting elements in the layering direction and formed of a first planarizing film having higher refractive index than air, and a second planarizing region other than the first planarizing region and formed of a second planarizing film having lower refractive index than the first planarizing film. In the layering direction, the upper semiconductor light emitting element transmits light emitted by the lower semiconductor light emitting element.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: An image display apparatus displaying an image by selectively emitting light from a plurality of semiconductor light emitting elements being regularly arranged, includes a substrate; a first conductive wiring layer being formed on the substrate and supplying a first electric potential; a second conductive wiring layer supplying a second electric potential; the plurality of semiconductor light emitting elements each including a first electrode layer being electrically connected to the first conductive wiring layer and a second electrode layer being electrically connected to the second conductive wiring layer; and a plurality of raised parts being disposed on the substrate, each of the raised parts having an upper surface which is higher than an upper surface of the first conductive wiring layer; wherein the plurality of semiconductor light emitting elements is fixed on the plurality of raised parts respectively.