Abstract: A mixing box 1 comprises a stirring chamber 2 in which two gas-introduction pipes 5, 6 for introducing gases are arranged in such a manner that the gas-introduction inlets 5a, 6a thereof are opposed to one another and a diffusion chamber 3 for diffusing a gas mixture, wherein a partition plate 4 having a specific shape is positioned between the stirring chamber and the diffusion chamber in such a manner that the volume of the diffusion chamber is larger than that of the stirring chamber, wherein a gas-supply opening 7 is arranged, on the partition plate, at a desired position on the lower side of the direction perpendicular to the straight line connecting the two gas-introduction inlets, the box being able to uniformly admix gases having different masses and having a simple structure. The partition plate has a shape of a curve of second degree, which is convex with respect to the bottom of the mixing box.

Abstract: Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.

Abstract: A vacuum processing apparatus is capable of increasing the speed of exhaust of residual gas. With the reaction chamber formed in the vacuum vessel made smaller than the assistance chamber, the thin film is grown by introducing the raw material gas into the reaction chamber after moving the substrate stage toward the reaction chamber and decreasing the conductance of evacuation of the reaction chamber. When exhausting the residual gas by vacuum pumping, the substrate stage is moved into the assistance chamber thereby increasing the conductance of evacuation of the reaction chamber. Pressure in the reaction chamber is increased when growing the thin film and decreases when exhausting the residual gas by vacuum pumping.