Abstract: An object is to reduce the influence of noise due to electric conduction carriers trapped between the surface of a silicon substrate and an oxide and thus achieve strain detection with a high S/N ratio. This semiconductor strain detection element includes: a silicon substrate; and a first impurity diffusion layer having a conduction type different from the silicon substrate, the first impurity diffusion layer being formed inside under a surface of the silicon substrate, wherein an amount of strain in the silicon substrate is detected on the basis of change in a resistance of the first impurity diffusion layer.

Abstract: Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Abstract: In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

Abstract: In order to achieve at least one of size reduction and high accuracy by maintaining the reliability of the thermal detection sensor in the thermal detection sensor in the flow state of the fluid to be detected, based on a heat transfer amount from the heating resistor element to the fluid to be detected by heat exchange between the fluid to be detected and the heating resistor element via the flattened film, the thermal type detection sensor for detecting a flow state of the fluid to be detected, and wherein a sidewall covering a sidewall of the heating resistor element and blocking physical contact between the heating resistor element and the flattened film is provided between the heating resistor element and the flattened film, and the sidewall suppresses fluctuation in electric resistance of the heating resistor element due to silicidation of the heating resistor element.

Abstract: An object is to reduce the influence of noise due to electric conduction carriers trapped between the surface of a silicon substrate and an oxide and thus achieve strain detection with a high S/N ratio. This semiconductor strain detection element includes: a silicon substrate; and a first impurity diffusion layer having a conduction type different from the silicon substrate, the first impurity diffusion layer being formed inside under a surface of the silicon substrate, wherein an amount of strain in the silicon substrate is detected on the basis of change in a resistance of the first impurity diffusion layer.

Abstract: An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.

Abstract: Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Abstract: In order to achieve at least one of size reduction and high accuracy by maintaining the reliability of the thermal detection sensor in the thermal detection sensor in the flow state of the fluid to be detected, based on a heat transfer amount from the heating resistor element to the fluid to be detected by heat exchange between the fluid to be detected and the heating resistor element via the flattened film, the thermal type detection sensor for detecting a flow state of the fluid to be detected, and wherein a sidewall covering a sidewall of the heating resistor element and blocking physical contact between the heating resistor element and the flattened film is provided between the heating resistor element and the flattened film, and the sidewall suppresses fluctuation in electric resistance of the heating resistor element due to silicidation of the heating resistor element.

Abstract: An infrared sensor includes a supporting body having supporting body metal wiring that allows infrared rays to pass through. The supporting body is provided so as to cover one portion of an infrared detecting portion in a different plane spatially separated from that of the infrared detecting portion. The supporting body metal wiring disposed in an interior of the supporting body is such that one portion of a cobalt iron film is oxidized by a plasma discharge being carried out in an oxygen atmosphere. According to this kind of structure, infrared rays pass through the supporting body, and are absorbed by the infrared detecting portion, because of which there is no need to provide an infrared absorption layer in an upper layer of the supporting body.

Abstract: An infrared sensor includes an infrared sensor pixel in which a contact hole is formed to electrically connect a metal wiring layer and a support leg metal wiring layer that is located inside a support leg. The metal wiring layer is electrically connected to a signal reading circuit. The contact hole is formed by etching an insulating layer that is formed by deposition so as to cover the metal wiring layer, and has a bottom portion and a side wall portion that are each shaped into a forward tapered shape.

Abstract: An infrared light source includes a resistor formed on the side of one principal surface of a support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate by etching the support substrate; and a protection film stacked as a layer on top of the resistor and projections. The resistor is disposed on the same plane in a region which forms an infrared emission portion in which the plurality of projections and the resistor are formed, and infrared is efficiently emitted from the region in which are formed the projections by heat generated by energizing the resistor.

Abstract: An infrared sensor includes an infrared sensor pixel in which a contact hole is formed to electrically connect a metal wiring layer and a support leg metal wiring layer that is located inside a support leg. The metal wiring layer is electrically connected to a signal reading circuit. The contact hole is formed by etching an insulating layer that is formed by deposition so as to cover the metal wiring layer, and has a bottom. portion and a side wall portion that are each shaped into a forward tapered shape.

Abstract: An infrared sensor forming an infrared solid-state imaging device includes a sensor element portion disposed in a package. In the sensor element portion, an absorption structure supported on a substrate is provided. The absorption structure has a structure in which a second insulating film, an absorption film, and a first insulating film are stacked on a reflective film. The first insulating film and the second insulating film are formed so as to have a film thickness with which the index of absorption of infrared radiation entering the absorption structure is maximized with consideration given to the energy loss in an optical transmission path to the absorption structure.

Abstract: In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

Abstract: An infrared light source includes a resistor formed on the side of one principal surface of a support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate by etching the support substrate; and a protection film stacked as a layer on top of the resistor and projections. The resistor is disposed on the same plane in a region which forms an infrared emission portion in which the plurality of projections and the resistor are formed, and infrared is efficiently emitted from the region in which are formed the projections by heat generated by energizing the resistor.

Abstract: An object is to achieve miniaturization and an increase in performance of a magnetic sensor device, and the magnetic sensor according to the present invention has a magnetic film and a metal electrode to be electrically coupled to the magnetic film, the magnetic film and the metal electrode constituting a magnetic sensor portion. The metal electrode is formed with level difference portions, and the magnetic film is formed on the level difference portions and sidewalls that connect the level difference portions.

Abstract: An infrared sensor includes: a package; an infrared detecting element formed on the package, the infrared detecting element including a thermal detector and an absorber formed on the thermal detector which is configured to absorb infrared light rays of a specific wavelength that are detected by conversion of the infrared light rays into heat; and a cap formed on the package to cover the infrared detecting element, the cap including: a body having front and rear surfaces, through which the infrared light rays transmit; and a shielding film, with a window formed therein, provided on at least one of the front and rear surfaces of the body, the infrared light rays being reflected by the shielding film other than a portion of the shielding film having the window, and every one of the infrared light rays passing through the window of the cap impinging on the absorber.

Abstract: With magnetic poles of a magnetic scale each having a length in the moving direction of T, a magnetic field sensing part has m element lines (m?2) each including n magnetic sensors (n?2) as the magnetic sensors corresponding to one of the magnetic poles. The n magnetic sensors included in one of the element lines are arranged at a constant pitch of ?(?=T/n). Each of the magnetic sensors included in the second or further element line is placed shifted by ?/m in the moving direction of the opposite magnetic pole from each of the magnetic sensors included in the previous element line.

Abstract: An infrared sensor for detecting infrared light rays of a specific wavelength is disclosed. The infrared sensor includes a package and an infrared detecting element formed on the package. The infrared detecting element includes a thermal detector and an absorber formed on the thermal detector to absorb infrared light rays of a specific wavelength. The infrared light rays of the specific wavelength are detected by the conversion of the infrared light rays into heat. A cap formed on the package is provided to cover the infrared detecting element. The cap includes a body having a front and rear surfaces, through which the infrared light rays transmit and a shielding film formed on at least one of the front and rear surfaces of the body to define a window. The infrared light rays are reflected on the shielding film except for the window. Every one of the infrared light rays passing through the window of the cap impinge on the absorber.

Abstract: With magnetic poles of a magnetic scale each having a length in the moving direction of T, a magnetic field sensing part has m element lines (m?2) each including n magnetic sensors (n?2) as the magnetic sensors corresponding to one of the magnetic poles. The n magnetic sensors included in one of the element lines are arranged at a constant pitch of ? (?=T/n). Each of the magnetic sensors included in the second or further element line is placed shifted by ?/m in the moving direction of the opposite magnetic pole from each of the magnetic sensors included in the previous element line.