Abstract: A tunnel magneto-resistance (TMR) magnetic sensor and its manufacturing method are provided in which its degradation of the degree of accuracy of angle detection or the like is not caused due to an electrical discharge current by static electricity. The TMR magnetic sensor includes a TMR sensor element formed on a first face of a substrate with an insulation film interposing therebetween; a conductive material formed on the first face of the substrate, being electrically connected to the substrate; and a passivation film surrounding a surface of the TMR sensor element and that of the conductive material, wherein at least a portion of the conductive material faces toward an opening portion formed in the passivation film.

Abstract: A tunnel magneto-resistance (TMR) magnetic sensor and its manufacturing method are provided in which its degradation of the degree of accuracy of angle detection or the like is not caused due to an electrical discharge current by static electricity. The TMR magnetic sensor includes a TMR sensor element formed on a first face of a substrate with an insulation film interposing therebetween; a conductive material formed on the first face of the substrate, being electrically connected to the substrate; and a passivation film surrounding a surface of the TMR sensor element and that of the conductive material, wherein at least a portion of the conductive material faces toward an opening portion formed in the passivation film.

Abstract: An object is to achieve miniaturization and an increase in performance of a magnetic sensor device, and the magnetic sensor according to the present invention has a magnetic film and a metal electrode to be electrically coupled to the magnetic film, the magnetic film and the metal electrode constituting a magnetic sensor portion. The metal electrode is formed with level difference portions, and the magnetic film is formed on the level difference portions and sidewalls that connect the level difference portions.

Abstract: An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

Abstract: An infrared detector and an infrared solid state imaging device of low noise in which a mechanical distortion of an infrared sensor portion can be decreased are provided. The infrared detector which comprises a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.