Patents by Inventor Takako Motai
Takako Motai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105820Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate, a cell region, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductivity type impurity. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers includes a first region extending in the first direction from the first face toward a second face of the semiconductor substrate, and a second region extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region.Type: ApplicationFiled: February 23, 2023Publication date: March 28, 2024Inventors: Takako MOTAI, Yoko IWAKAJI, Kaori FUSE, Hiroko ITOKAZU, Keiko KAWAMURA
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Publication number: 20240097021Abstract: A semiconductor device includes a semiconductor substrate, a cell region provided, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductive impurity, a plurality of second diffusion layers each disposed on an outer side of each of the plurality of first diffusion layers and having a concentration of the first conductive impurity lower than that of the first diffusion layers, and a plurality of conductive layers opposing the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate, the plurality of conductive layers electrically connected to the first diffusion layers, the plurality of conductive layers each having an outer end portion. On a lower side of the outer end portion, any one of the plurality of second diffusion layers is present.Type: ApplicationFiled: February 23, 2023Publication date: March 21, 2024Inventors: Takako MOTAI, Yoko IWAKAJI, Kaori FUSE, Keiko KAWAMURA, Kentaro ICHINOSEKI
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Publication number: 20240097012Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.Type: ApplicationFiled: February 28, 2023Publication date: March 21, 2024Inventors: Hiroko ITOKAZU, Yoko IWAKAJI, Keiko KAWAMURA, Tomoko MATSUDAI, Kaori FUSE, Takako MOTAI
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Publication number: 20230307555Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, and first and second insulating film. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third and fourth electrodes each extend into the semiconductor device form the front surface side. The third and fourth electrodes are electrically insulated from the semiconductor part by insulating films. The semiconductor part includes first to fourth layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is partially provided between the second layer and the second electrode. The fourth layer of the first conductivity type is provided in the second layer. The fourth layer is apart from the third layer.Type: ApplicationFiled: September 12, 2022Publication date: September 28, 2023Inventors: Kaori FUSE, Keiko KAWAMURA, Tomoko MATSUDAI, Yoko IWAKAJI, Takako MOTAI, Hiroko ITOKAZU
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Publication number: 20230086935Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.Type: ApplicationFiled: March 4, 2022Publication date: March 23, 2023Inventors: Kaori FUSE, Keiko KAWAMURA, Takako MOTAI, Tomoko MATSUDAI, Yoko IWAKAJI
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Publication number: 20230078785Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.Type: ApplicationFiled: January 24, 2022Publication date: March 16, 2023Inventors: Takako MOTAI, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU, Kaori FUSE, Keiko KAWAMURA, Kohei OASA
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Publication number: 20230068786Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: ApplicationFiled: October 20, 2022Publication date: March 2, 2023Inventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Patent number: 11575031Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.Type: GrantFiled: March 15, 2021Date of Patent: February 7, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura, Kaori Fuse, Takako Motai
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Patent number: 11538929Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.Type: GrantFiled: February 8, 2021Date of Patent: December 27, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu, Takako Motai
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Patent number: 11502074Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: GrantFiled: August 6, 2020Date of Patent: November 15, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Publication number: 20220293725Abstract: A semiconductor device includes an element region and a termination region. The element region includes a first semiconductor region of a first conductivity type located on a first electrode and a second semiconductor region of a second conductivity type located on the first semiconductor region. The second semiconductor region is electrically connected with a second electrode. The termination region includes a third semiconductor region of the first conductivity type, a first diffusion layer of the second conductivity type located at a surface of the third semiconductor region, and a second diffusion layer of the second conductivity type. The third semiconductor region is located outward of the first semiconductor region. The first diffusion layer surrounds the element region. The second diffusion layer surrounds the element region, and is deeper than the first diffusion layer.Type: ApplicationFiled: September 9, 2021Publication date: September 15, 2022Inventors: Kaori FUSE, Keiko KAWAMURA, Takako MOTAI
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Publication number: 20220093776Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.Type: ApplicationFiled: February 8, 2021Publication date: March 24, 2022Inventors: Takeshi SUWA, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU, Takako MOTAI
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Publication number: 20220085216Abstract: A semiconductor device includes first and second semiconductor layers of a first conductivity type, a third semiconductor layer of a second conductivity type, a plurality of electrodes, and a first insulating film. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer with a first surface at a side opposite to the first semiconductor layer. The electrodes extend from the first surface into the second semiconductor layer. A first insulating film provided between the second and third semiconductor layers and each of electrodes. The electrodes include first and second electrode groups. The first electrode group is arranged in one column in the first direction and apart from each other by a first distance. The first and second electrode groups are apart from each other by a second distance in the second direction.Type: ApplicationFiled: September 10, 2021Publication date: March 17, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroko ITOKAZU, Tomoko MATSUDAI, Yoko IWAKAJI, Takako MOTAI, Keiko KAWAMURA, Kaori FUSE
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Publication number: 20220077306Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.Type: ApplicationFiled: March 15, 2021Publication date: March 10, 2022Inventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura, Kaori Fuse, Takako Motai
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Publication number: 20210296310Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: ApplicationFiled: August 6, 2020Publication date: September 23, 2021Inventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Patent number: 9583577Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.Type: GrantFiled: August 31, 2015Date of Patent: February 28, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Masaaki Ogawa, Takako Motai, Wakana Nishiwaki
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Publication number: 20160268380Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.Type: ApplicationFiled: August 31, 2015Publication date: September 15, 2016Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI, Wakana NISHIWAKI
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Publication number: 20160268219Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first insulating layer that has refractive index of 1.95 or less, contains silicon nitride, and located on the semiconductor layer, and a resin that is provided on the first insulating layer and is in contact with the first insulating layer.Type: ApplicationFiled: August 28, 2015Publication date: September 15, 2016Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI, Yoko IWAKAJI
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Patent number: 9412825Abstract: A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.Type: GrantFiled: August 29, 2014Date of Patent: August 9, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Takaaki Yasumoto, Naoko Yanase, Kazuhide Abe, Takeshi Uchihara, Yasunobu Saito, Toshiyuki Naka, Akira Yoshioka, Tasuku Ono, Tetsuya Ohno, Hidetoshi Fujimoto, Shingo Masuko, Masaru Furukawa, Yasunari Yagi, Miki Yumoto, Atsuko Iida, Yukako Murakami, Takako Motai
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Publication number: 20160079371Abstract: According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.Type: ApplicationFiled: March 2, 2015Publication date: March 17, 2016Inventors: Chisato FURUKAWA, Masaaki OGAWA, Takako MOTAI