Abstract: A quality problem treatment supporting system includes a storage portion and a processing portion. The processing portion includes a claim code checking program; a parts number checking program; an attached file search program; a temporal registration data determination program; a claim history data determination program; a delivery result search program; a classification data generation program; an investigation-execution-section determination section; a formal registration execution program; an investigation request message generation program; a past status determination program; a continuous failure determination program; a post-processing data generation program; a defect responsibility rate calculation program; a price data extraction program; an expense data extraction program; a remuneration calculation program; a monetary amount calculation program; and an payment amount determination program; and a monetary amount information transmission program.

Abstract: The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnect 107 comprises a silicon-lower concentration region 104 and a silicon solid solution layer 106 disposed thereon. The silicon solid solution layer 106 has a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnect 107 to be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layer 106 has the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.