Patents by Inventor Takamitsu Nagai
Takamitsu Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11562883Abstract: An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.Type: GrantFiled: February 20, 2020Date of Patent: January 24, 2023Assignee: KIOXIA CORPORATIONInventor: Takamitsu Nagai
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Publication number: 20200411278Abstract: An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.Type: ApplicationFiled: February 20, 2020Publication date: December 31, 2020Applicant: KIOXIA CORPORATIONInventor: Takamitsu NAGAI
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Patent number: 9368314Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical systems; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: June 30, 2014Date of Patent: June 14, 2016Assignee: EBARA CORPORATIONInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Publication number: 20140319346Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical systems; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: ApplicationFiled: June 30, 2014Publication date: October 30, 2014Applicant: EBARA CORPORATIONInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Patent number: 8803103Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: January 2, 2013Date of Patent: August 12, 2014Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Patent number: 8368031Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: September 23, 2011Date of Patent: February 5, 2013Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Publication number: 20120032079Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: ApplicationFiled: September 23, 2011Publication date: February 9, 2012Applicants: KABUSHIKI KAISHA TOSHIBA, EBARA CORPORATIONInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Patent number: 8053726Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: July 1, 2008Date of Patent: November 8, 2011Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Patent number: 7973281Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contType: GrantFiled: July 8, 2009Date of Patent: July 5, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
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Patent number: 7847250Abstract: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.Type: GrantFiled: November 5, 2008Date of Patent: December 7, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Ichirota Nagahama, Yuichiro Yamazaki, Takamitsu Nagai, Motosuke Miyoshi
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Publication number: 20090272901Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contType: ApplicationFiled: July 8, 2009Publication date: November 5, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
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Patent number: 7573066Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contType: GrantFiled: April 4, 2007Date of Patent: August 11, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki
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Patent number: 7569838Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.Type: GrantFiled: February 7, 2008Date of Patent: August 4, 2009Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Kenji Watanabe, Hirosi Sobukawa, Nobuharu Noji, Tohru Satake, Shoji Yoshikawa, Tsutomu Karimata, Mamoru Nakasuji, Masahiro Hatakeyama, Takeshi Murakami, Yuichiro Yamazaki, Ichirota Nagahama, Takamitsu Nagai, Kazuyoshi Sugihara
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Publication number: 20090072139Abstract: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.Type: ApplicationFiled: November 5, 2008Publication date: March 19, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Ichirota Nagahama, Yuichiro Yamazaki, Takamitsu Nagai, Motosuke Miyoshi
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Publication number: 20090032708Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: ApplicationFiled: July 1, 2008Publication date: February 5, 2009Applicants: EBARA CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hirosi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Patent number: 7462829Abstract: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.Type: GrantFiled: March 21, 2007Date of Patent: December 9, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Ichirota Nagahama, Yuichiro Yamazaki, Takamitsu Nagai, Motosuke Miyoshi
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Patent number: 7411191Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.Type: GrantFiled: June 1, 2007Date of Patent: August 12, 2008Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Mamoru Nakasuji, Nobuharu Noji, Tohru Satake, Masahiro Hatakeyama, Toshifumi Kimba, Hiroshi Sobukawa, Shoji Yoshikawa, Takeshi Murakami, Kenji Watanabe, Tsutomu Karimata, Shin Oowada, Mutsumi Saito, Yuichiro Yamazaki, Takamitsu Nagai, Ichirota Nagahama
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Publication number: 20080173814Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.Type: ApplicationFiled: February 7, 2008Publication date: July 24, 2008Applicants: EBARA CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Kenji Watanabe, Hirosi Sobukawa, Nobuharu Noji, Tohru Satake, Shoji Yoshikawa, Tsutomu Karimata, Mamoru Nakasuji, Masahiro Hatakeyama, Takeshi Murakami, Yuichiro Yamazaki, Ichirota Nagahama, Takamitsu Nagai, Kazuyoshi Sugihara
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Patent number: 7351969Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.Type: GrantFiled: December 1, 2005Date of Patent: April 1, 2008Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Kenji Watanabe, Hirosi Sobukawa, Nobuharu Noji, Tohru Satake, Shoji Yoshikawa, Tsutomu Karimata, Mamoru Nakasuji, Masahiro Hatakeyama, Takeshi Murakami, Yuichiro Yamazaki, Ichirota Nagahama, Takamitsu Nagai, Kazuyoshi Sugihara
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Publication number: 20080011947Abstract: A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contType: ApplicationFiled: April 4, 2007Publication date: January 17, 2008Inventors: Hiroyuki Hayashi, Takamitsu Nagai, Tomonobu Noda, Kenichi Kadota, Hisaki Kozaki