Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) undergoing an increase in alkali solubility due to action of acid; a compound (C) generating acid upon irradiation with an actinic ray or radiation; and a solvent (S) including a solvent SA having a boiling point of 130° C. to 150° C. and a solvent SB having a boiling point of 155° C. to 250° C., in which a content of the solvent SA is higher than a content of the solvent SB, the content of the solvent SB relative to the whole solvent is 1% to 30% by mass, and a concentration of solid contents is 10% by mass or more.

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa·s or more, the method containing a step 1 of charging at least a resin of which polarity increases by an action of an acid, a photoacid generator, and a solvent as raw materials into a stirring tank, and a step 2 of stirring the raw materials in the stirring tank. A liquid temperature in the stirring tank is controlled to be equal to or lower than a 3.0° C. higher temperature than a liquid temperature at a start of the step 2 throughout the entire step 2, and the control of the liquid temperature in the stirring tank in the step 2 is performed by passing an inert gas through the stirring tank.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) and a resin (B) which include a repeating unit having an acid-decomposable group, and the acid-decomposable group in the resin (A) and the acid-decomposable group in the resin (B) have the same structures. Regarding the resin (A) and the resin (B), |GA?GB| is from 5% by mole to 20% by mole, SA/SB is 10/90 to 90/10, |MwA?MwB| is from 100 to 5,000, and |MwA/MnA?MwB/MnB| is 0.05 or more.

Abstract: A method for producing a composition, the method being for producing a composition using a stirring device provided with a stirring tank and a stirrer, includes a mixing step of charging a resin, an acid generator, and a solvent into the stirring tank, and a stirring step of stirring the mixture accommodated in the stirring tank, using the stirrer, in which a ratio c of a content of the acid generator to a total mass of the mixture is 0.3% to 2.5% by mass, the stirrer is provided with a rotatable stirring shaft, a plurality of support parts attached to the stirring shaft, and a plurality of stirring elements attached to each of end parts of the plurality of support parts, the shape and the arrangement of the stirring elements are specified, and the positions of the plurality of stirring elements are specified so as to satisfy a specific Expression (1).

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition, comprising: preparing an intermediate solution which includes a photoacid generator and a solvent; and mixing the intermediate solution with at least a resin to prepare an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa·s or more.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, (P) an amine oxide, and (D) an acid diffusion control agent (provided that acid diffusion control agents corresponding to the amine oxide are excluded), in which a content of the amine oxide (P) is from 0.01 ppm to 1,000 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, and a mass ratio of the acid diffusion control agent (D) to the amine oxide (P) is more than 1 and 10,000 or less.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, and an anion (P) which is one or more anions selected from the group consisting of NO3?, SO42?, Cl?, and Br?, in which a content of the anion (P) is from 0.01 ppb to 100 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) having a glass transition temperature of 155° C. or higher, a compound (B) having a glass transition temperature of 150° C. or lower, and a solvent (C). A solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 20% by mass or more. A softening point of the resist pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition is from 130° C. to 170° C.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin which has a repeating unit having an alkyleneoxy chain and a repeating unit having an aromatic group, and has a concentration of the solid content of 10% by mass or more. A pattern forming method has (i) forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 ?m or more on a substrate with an actinic ray-sensitive or radiation-sensitive resin composition containing a resin which has a repeating unit having an alkyleneoxy chain.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) having a glass transition temperature of 155° C. or higher, a compound (B) having a glass transition temperature of 150° C. or lower, and a solvent (C). A solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 20% by mass or more. A softening point of the resist pattern formed using the actinic ray-sensitive or radiation-sensitive resin composition is from 130° C. to 170° C.

Abstract: The present invention provides a pattern forming method which can be suitably applied to grayscale exposure since a deviation of the thickness among production lots is hardly generated, and an actinic ray-sensitive or radiation-sensitive resin composition. The pattern forming method of the present invention is a pattern forming method having a step A of forming a film having a thickness T on a substrate, using an actinic ray-sensitive or radiation-sensitive resin composition including a resin whose solubility in a developer changes by the action of an acid and an acid generator, a step B of exposing the film, and a step C of developing the exposed film using a developer to form a pattern, in which the film formed in the step A satisfies at least one of the following condition 1 or 2. Condition 1: In a case where the thickness T of the film is 800 nm or more, the value of ? is less than 10,000. Condition 2: In a case where the thickness T of the film is less than 800 nm, the value of ? is less than 5,000.

Abstract: A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a group capable of decomposing by an action of an acid to produce a polar group, (C1) a compound containing a group capable of generating a first acidic functional group upon irradiation with an actinic ray or radiation and a group capable of generating a second acidic functional group different from the first acidic functional group upon irradiation with an actinic ray or radiation, and (C2) at least one compound containing two or more groups selected from the group consisting of the groups capable of generating the structures represented by the specific formulae upon irradiation with an actinic ray or radiation.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, and a resist film and a pattern forming method using the composition are provided, the composition including (A) a compound capable of decomposing by the action of an acid to increase the solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a basic compound; and (D) a specific compound containing at least two specific alicyclic hydrocarbon groups each substituted with a hydroxyl group.

Abstract: According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.

Abstract: A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms and R2 represents an alkylene group having 1 to 4 carbon atoms.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition of the first invention includes (A1) an acid-decomposable resin, the resin containing three kinds of repeating units each having a specific structure, (B) a photo-acid generator and (C1) a 2-phenylbenzimidazole-based basic compound; an actinic ray-sensitive or radiation-sensitive resin composition of the second invention includes (A2) an acid-decomposable resin, (B) a photo-acid generator and (C2) 2-heteryl benzimidazole-based basic compound; a chemical amplification resist composition of the third invention includes (A3) an acid-decomposable resin, (B) a photo-acid generator and (C3) a benzimidazole-based basic compound having a sulfur atom-containing specific structure; and a resist film and a pattern forming method each use such a composition.

Abstract: According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.

Abstract: The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X1)n-L wherein X1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X1s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).

Abstract: A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.