Abstract: A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1): wherein X represents a heterocyclic group containing at least one nitrogen atom, Y represents hydrogen atom, an aliphatic hydrocarbon group, an aryl group, or a —C(?O)Z? wherein Z? is as defined for Z, and Z represents hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, an optionally substituted heterocyclic group, —NZ1Z2, or —OZ3 wherein Z1, Z2, and Z3 independently represent hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, or an optionally substituted heterocyclic group, with the proviso that Y and Z may together form a ring; an oxidizing agent; and an organic acid.

Abstract: A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms and R2 represents an alkylene group having 1 to 4 carbon atoms.

Abstract: A metal-polishing liquid used for chemical and mechanical polishing of copper wiring in a semiconductor device, the metal-polishing liquid comprising: (a) a tetrazole compound having a substituent in the 5-position; (b) a tetrazole compound not substituted in the 5-position; (c) abrasive grains; and (d) an oxidizing agent.

Abstract: The present invention provides a metal-polishing liquid that is used in chemical mechanical polishing for a conductor film made of copper or a copper alloy during semiconductor device production, wherein the metal-polishing liquid comprises the following components (1), (2) and (3): (1) an amino-acid derivative represented by the following formula (I) wherein in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms; (2) colloidal silica in which silicon atoms on a surface thereof are at least partially modified by aluminum atoms; and (3) an oxidant.

Abstract: The present invention provides a metal-polishing composition for use in chemical mechanical polishing of semiconductor devices, comprising: (a) a compound represented by the following Formula A, (b) a compound represented by the following Formula B, (c) an abrasive grain, and (d) an oxidizing agent: in Formula A, R1 represents an alkyl group having 1 to 3 carbon atoms; and R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and in Formula B, R3, R4, and R5 each independently represent a hydrogen atom, or an alkyl, aryl, alkoxy, amino, aminoalkyl, hydroxy, hydroxyalkyl, carboxy, carboxyalkyl or carbamoyl group.