Abstract: A semiconductor device includes a first memory controller configured to output a first control signal to first and second external memories through a first memory interface, a second memory controller configured to output a second control signal to the second external memory through a second memory interface, an inter-device interface for communicating with another semiconductor device, terminals configured to output the second control signal that has passed through the second memory interface, and a first selector configured to select between the second memory interface and the inter-device interface in accordance with an operation mode of the semiconductor device and to couple the selected interface to the terminals.

Abstract: A memory controller that suppresses noise generated when data is transferred to a memory, includes a write part portion that writes transmission data into the memory, and a read portion that reads data from the memory. The write portion includes a substitution unit that substitutes, when a linear sequence of a bit of “1” and a bit of “0” of a bit string configuring data transmitted through the signal line is a target pattern set as a substitution target, a substitutional bit string that suppresses noise for the bit string, before the transmission data is written into the memory. The read portion includes a restoration unit that restores a substitutional bit string read from the memory to an initial bit string.

Abstract: A semiconductor device includes a first memory controller configured to output a first control signal to first and second external memories through a first memory interface, a second memory controller configured to output a second control signal to the second external memory through a second memory interface, an inter-device interface for communicating with another semiconductor device, terminals configured to output the second control signal that has passed through the second memory interface, and a first selector configured to select between the second memory interface and the inter-device interface in accordance with an operation mode of the semiconductor device and to couple the selected interface to the terminals.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: To suppress an increase in the number of voltage comparators with an expansion in a chip temperature detection range, a temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage obtained by the reference voltage generating circuit with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: A semiconductor device includes a clock input circuit that receives an external clock signal, a PLL circuit for input timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to acquire input data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to a PLL circuit for input timing control as a delayed clock signal. The semiconductor device further includes a PLL circuit for output timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to output data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to the PLL circuit for output timing control as a delayed clock signal.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: A semiconductor device includes a clock input circuit that receives an external clock signal, a PLL circuit for input timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to acquire input data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to a PLL circuit for input timing control as a delayed clock signal. The semiconductor device further includes a PLL circuit for output timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to output output data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to the PLL circuit for output timing control as a delayed clock signal.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: A semiconductor device includes a first memory controller configured to output a first control signal to first and second external memories through a first memory interface, a second memory controller configured to output a second control signal to the second external memory through a second memory interface, an inter-device interface for communicating with another semiconductor device, terminals configured to output the second control signal that has passed through the second memory interface, and a first selector configured to select between the second memory interface and the inter-device interface in accordance with an operation mode of the semiconductor device and to couple the selected interface to the terminals.

Abstract: In a wiring substrate, a double data rate (DDR) memory and a memory controller controlling the DDR memory are mounted. Further, in the wiring substrate, plural equal-length wires connecting the DDR memory and the memory controller are formed. The plural equal-length wires include a differential transmission line, such as a clock wire transmitting a clock signal, which is connected via a common mode choke coil. The differential transmission line may have a wire length shorter than a wire length of another equal-length wire, by a wire length corresponding to delay time of a transmission signal due to the common mode choke coil.

Abstract: A semiconductor device includes a clock input circuit that receives an external clock signal, a PLL circuit for input timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to acquire input data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to a PLL circuit for input timing control as a delayed clock signal. The semiconductor device further includes a PLL circuit for output timing control that performs phase adjustment between the external clock signal and a delayed clock signal to generate an internal clock signal used to output output data, and a delay circuit that delays the internal clock signal to output the internal clock signal that is delayed to the PLL circuit for output timing control as a delayed clock signal.

Abstract: A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: In a wiring substrate, a double data rate (DDR) memory and a memory controller controlling the DDR memory are mounted. Further, in the wiring substrate, plural equal-length wires connecting the DDR memory and the memory controller are formed. The plural equal-length wires include a differential transmission line, such as a clock wire transmitting a clock signal, which is connected via a common mode choke coil. The differential transmission line may have a wire length shorter than a wire length of another equal-length wire, by a wire length corresponding to delay time of a transmission signal due to the common mode choke coil.

Abstract: The data processor enhances the bus throughput or data throughput of an external memory, when there are frequent continuous reads with a smaller data size than the data bus width of the external memory. The data processor includes a memory control unit being capable of controlling in response to a clock an external memory having plural banks that are individually independently controllable, plural buses connected to the memory control unit, and circuit modules capable of commanding memory accesses, which are provided in correspondence with each of the buses. The memory control unit contains bank caches each corresponding to the banks of the external memory.

Abstract: The data processor enhances the bus throughput or data throughput of an external memory, when there are frequent continuous reads with a smaller data size than the data bus width of the external memory. The data processor includes a memory control unit being capable of controlling in response to a clock an external memory having plural banks that are individually independently controllable, plural buses connected to the memory control unit, and circuit modules capable of commanding memory accesses, which are provided in correspondence with each of the buses. The memory control unit contains bank caches each corresponding to the banks of the external memory.

Abstract: The data processor enhances the bus throughput or data throughput of an external memory, when there are frequent continuous reads with a smaller data size than the data bus width of the external memory. The data processor includes a memory control unit being capable of controlling in response to a clock an external memory having plural banks that are individually independently controllable, plural buses connected to the memory control unit, and circuit modules capable of commanding memory accesses, which are provided in correspondence with each of the buses. The memory control unit contains bank caches each corresponding to the banks of the external memory.

Abstract: The data processor enhances the bus throughput or data throughput of an external memory, when there are frequent continuous reads with a smaller data size than the data bus width of the external memory. The data processor includes a memory control unit being capable of controlling in response to a clock an external memory having plural banks that are individually independently controllable, plural buses connected to the memory control unit, and circuit modules capable of commanding memory accesses, which are provided in correspondence with each of the buses. The memory control unit contains bank caches each corresponding to the banks of the external memory.