Abstract: The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance, which can be mixed with advanced CMOS logic. The non-volatile storage element has at least a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide between both conductive layers, with a buffer layer having oxygen ion conductivity situated between the ferroelectric layer and the first conductive layer and/or second conductive layer.

Abstract: Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C.

Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.

Abstract: A developer container includes a body, an agitating bar, and an agitating film. The body includes a bottom plate; a first side wall; a second side wall facing the first side wall; a developer chamber defined by the bottom plate, the first side wall, and the second side wall, the developer chamber storing developer; and an opening formed in the bottom plate to allow the developer chamber to communicate with an outside of the developer chamber and allow the developer to be supplied from the developer chamber to the outside of the developer chamber. The agitating bar is configured to rotate to agitate the developer stored in the developer chamber. The agitating film is attached to the agitating bar and configured to, when rotation of the agitating bar stops, stop in a state where the agitating film abuts the first side wall and the second side wall.

Abstract: A developer container includes a body, an agitating bar, and an agitating film. The body includes a bottom plate; a first side wall; a second side wall facing the first side wall; a developer chamber defined by the bottom plate, the first side wall, and the second side wall, the developer chamber storing developer; and an opening formed in the bottom plate to allow the developer chamber to communicate with an outside of the developer chamber and allow the developer to be supplied from the developer chamber to the outside of the developer chamber. The agitating bar is configured to rotate to agitate the developer stored in the developer chamber. The agitating film is attached to the agitating bar and configured to, when rotation of the agitating bar stops, stop in a state where the agitating film abuts the first side wall and the second side wall.

Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.

Abstract: Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

Abstract: There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.

Abstract: There is provided a cleaning method for a substrate processing apparatus capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber 102 under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode 111 and a upper electrode 120. Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased as an absolute value of the self-bias voltage decreases.

Abstract: Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

Abstract: A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.

Abstract: A sealing structure is incorporated in an image forming unit. A rotatable body is supported in a housing body. A sealing member extends in a longitudinal direction substantially parallel to the rotational axis of the rotatable body, providing a seal against the surface of the rotatable body. The sealing member includes a first widthwise end portion fixed to the housing body and a second widthwise end portion in contact with rotatable body, having a larger width at a longitudinally middle portion than at longitudinally end portions. The second widthwise end portion includes a widthwise free edge describing an arc such that the width is larger nearer the longitudinally middle portion. The sealing member may include longitudinally end portions and a longitudinally middle portion between the longitudinally end portions, the longitudinally middle portion having a constant width and the longitudinally end portions having a width smaller nearer the longitudinal ends.

Abstract: A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.

Abstract: An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.

Abstract: A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.

Abstract: A developing unit is provided, which includes a developer accommodating section to accommodate developer; a developing member to provide the developer accommodated in the developer accommodating section to an image carrying body by rotating; a developer layer forming member to forming a developer layer by shaving the developer on surface of the developing member; and a restricting member to restrict fluidity of the developer at a upstream side in a rotating direction of the developing member in front of a contact part of the developer layer forming member and the developing member.

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).