Abstract: A developing unit is provided, which comprises a developer accommodating section to accommodate developer; a developing member to provide said developer accommodated in said developer accommodating section to an image carrying body by rotating; a developer layer forming member to forming a developer layer by shaving said developer on surface of said developing member; and a restricting member to restrict fluidity of said developer at a upstream side in a rotating direction of said developing member in front of a contact part of said developer layer forming member and the developing member.

Abstract: A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

Abstract: This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

Abstract: An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.

Abstract: A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: A developing device 4 includes a developing roller 10 that faces a drum 1, a supplying roller 11 that supplies the toner to the developing roller 10, and a toner container 15 for storing the toner. A toner layer forming roller 12 contacts the developing roller 10 and rotates in the same direction as the developing roller 10. A part of the toner is transferred from the developing roller 10 to the peripheral surface of the toner layer forming roller 12 to form a toner layer. The thickness of the toner layer on the toner layer forming roller 12 is regulated by a blade 13. According to the rotation of the toner layer forming roller 12, the toner layer is carried outside the toner container 15, where the toner layer is transferred to the peripheral surface of the developing roller 10.

Abstract: This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

Abstract: A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.

Abstract: A developing device 4 includes a developing roller 10 that faces a drum 1, a supplying roller 11 that supplies the toner to the developing roller 10, and a toner container 15 for storing the toner. Atoner layer forming roller 12 contacts the developing roller 10 and rotates in the same direction as the developing roller 10. A part of the toner is transferred from the developing roller 10 to the peripheral surface of the toner layer forming roller 12 to form a toner layer. The thickness of the toner layer on the toner layer forming roller 12 is regulated by a blade 13. According to the rotation of the toner layer forming roller 12, the toner layer is carried outside the toner container 15, where the toner layer is transferred to the peripheral surface of the developing roller 10.

Abstract: A clamp mechanism 35 holding an object W to be processed placed on a susceptor 22 in a processing vessel 16 for film formation which can be vacuumed, includes a ring-shaped clamp ring body 38 contacting a peripheral portion of the object to be processed, and an urging member 40 for urging the clamp ring body downwardly. A contact surface 38A on an inner peripheral side of the clamp ring body is formed as a tapered surface which is inclined at a predetermined angle &thgr; downwardly from the horizontal line outward in the direction of the diameter of the object to be processed. The predetermined angle is set in a range from 2 to 15 degrees, and the amount of overlap between the contact surface and the peripheral edge portion of the object to be processed is set in a range from 0.7 to 3.5 mm. Thus, formation of an unnecessary deposition film in the vicinity of the peripheral portion of the object to be processed and the side surface thereof is properly restricted.

Abstract: Resiliency of a flat spring 7 corresponding to an end print wire 12 is set to be greater than that corresponding to a central print wire 12 by varying width of an effective spring portion 7b of a flat spring piece 7A to which an armature 13 is attached depending on positions of corresponding tips of the print wires 12. Distance between a magnet yoke 5 and a core 15 provided between the flat spring 7 and a permanent magnet 4 at a position corresponding to a central print wire 12 side is set to be smaller than that at a position corresponding to an end print wire 12 side by varying it depending on positions of corresponding tips of the print wires 12.

Abstract: An impact printer having a print head, the print head having a movable armature, a printing wire fixed to the armature, and sensor for detecting movement of the armature. The position of the armature is monitored based on an output of the sensor. A home sensor detects whether the print head is at a home position. A paper end sensor detect whether a printing medium is between the platen and the print head. A gap motor means adjusts a gap between the printing wire and the platen. A gap controller is responsive to detection signals output by said home sensor and said paper end sensor, for controlling the print head to swing the armature so as to cause the tip of said printing wire to strike the platen, determining a time of impact of the tip with the platen based on the monitored position of the armature, performing a comparison of the time of impact with a predetermined impact time, and outputting a drive signal to the gap motor for adjusting the gap according to a result of the comparison.