Abstract: A laser machining nozzle herein obtained includes a main assist-gas nozzle (2) for emitting a laser beam (8) and a main assist-gas, and an auxiliary assist-gas nozzle (5) annularly surrounding the main assist-gas nozzle for emitting an auxiliary assist-gas, whereby a gold plating (12) is provided on an interior surface of the main assist-gas nozzle to reflect the laser beam, so that a temperature rise of the laser machining nozzle can be prevented, and even when the laser beam (8) is reflected on the interior surface of the laser machining nozzle, it is possible to reduce peeling of the gold plating (12) applied onto the interior surface of the laser machining nozzle.

Abstract: A novel material having high hole-transporting ability and a high glass transition temperature and having long-lasting durability is obtained. A benzofluorene compound represented by formula (1) is used. (In the formula, M is a substituted or unsubstituted aryl group having 6-40 carbon atoms or a substituted or unsubstituted heteroaryl group having 5-40 carbon atoms; Ar1 to Ar4 each independently is a substituted or unsubstituted aryl group having 6-40 carbon atoms or a substituted or unsubstituted heteroaryl group having 5-40 carbon atoms, provided that at least one of Ar1 to Ar4 is a substituent represented by any of the following formulae (2) to (5); and p is an integer of 0-2.

Abstract: To provide a process for preparing an arylamine highly selectively and highly efficiently, which is also industrially superior without a fear of a side reaction when a strong base is employed. An aryl compound having an active group is reacted with an amine compound in the presence of a base by means of a catalyst for producing an arylamine which comprises a palladium compound having a tertiary phosphine group and a phase-transfer catalyst.

Abstract: A ?-conjugated compound having a cardo structure of formula (1): where R1 and R2 are hydrogen, alkyl, alkoxy, phenyl, naphthyl, phenoxy or halogen; Ar1 is a group of formula (2) or (3): where R3 thru R6 are hydrogen, alkyl, alkoxy, aryl, hetero-aryl, aryloxy or a halogen, and l and m are 0-3, and n is 0-2; and Ar2 is aryl or hetero aryl. The ?-conjugated compound has good stability and is used as light emitting material.

Abstract: An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Abstract: A processing apparatus and a processing method are capable of properly and easily obtaining accurate data on the contact pressure applied by an end effector to a workpiece while a process is being carried out. A processing apparatus (7) processes a surface of a wafer (W) held by a spin chuck (22) (holding means) by bringing an end effector (40) into contact with the surface of the wafer (W). The end effector (40) can be retracted from the surface of the wafer (W) to a waiting position (25). A measuring and cleaning device (28) comprises, in combination, a measuring device (26) for measuring contact pressure to be applied to the wafer (W) by the end effector (40), and a cleaning device (27) for cleaning the end effector (40). The measuring device (26) has a table (60) for supporting the end effector (40), and a pressure sensor (62) for measuring a pressure applied to the table (60) to estimate a contact pressure actually applied by the end effector (40) to the wafer (W).

Abstract: This substrate processing device is identical to a wafer cleaning device 5 for cleaning a wafer W, which includes a supply nozzle 34 for supplying APM and the pure water, a spin chuck 31 for carrying the wafer W and a container 31 for accommodating the spin chuck 31. The container 30 includes an inner processing chamber 42 and an outer processing chamber 43 and is constructed so as to be movable up and down to the spin chuck 31. A first drainage line 50 is connected to the inner processing chamber 42 to discharge APM and the interior atmosphere, while a second drainage line 51 is connected to the outer processing chamber 43 to discharge pure water and the interior atmosphere. With the connection of the first drainage line 50, the wafer cleaning device 5 is adapted so that the supply nozzle 34 supplies APM to a surface of the wafer W again. Therefore, it is possible to reuse this processing liquid advantageously and additionally, an exhaust displacement can be reduced.

Abstract: In a cleaning apparatus for substrates, such as semiconductor wafers, a permeable core member 68 made of a synthetic resin is supplied with distilled water from a distilled water supply path 60 within a head portion 66 of a cleaning tool 24. A planar portion 72 is provided on the lower surface of the core member 68 and a porous resin sheet 69 is attached to the outer surface of the core member 68, to cover it. The cleaning tool 24 is provided with an air bearing cylinder 30 that imparts a vertical driving force to a rod 31 that presses against the surface of a wafer W which is being rotated, and the distilled water supply path 60 is provided within the rod 31. The distilled water supplied from the distilled water supply path 60 permeates through the core member 68 and the porous resin sheet 69 and is sent out of the head 66 so that a flowing film of distilled water is formed on the surface of the wafer W. Thus contamination and damage of the substrate is prevented and the shape of the head is not destroyed.

Abstract: A scrub washing apparatus comprises a spin chuck for holding a substrate to be processed substantially horizontally, a nozzle for supplying a washing liquid to the substrate mounted on the spin chuck, an arm vertically and horizontally movably supported, an output shaft provided at the arm, a sponge brush connected directly or indirectly to the output shaft, for scrubbing the substrate on the spin chuck in contact therewith, a press mechanism moving the sponge brush downward together with the output shaft, for pressing the sponge brush against the substrate on the spin chuck, and a rotation drive mechanism provided above the press mechanism at a position where the rotation drive mechanism is capable of being engaged with the output shaft, for directly rotating the sponge brush by engaging with the output shaft.

Abstract: An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Abstract: A scrub washing apparatus comprises a spin chuck for holding a substrate to be processed substantially horizontally, a nozzle for supplying a washing liquid to the substrate mounted on the spin chuck, an arm vertically and horizontally movably supported, an output shaft provided at the arm, a sponge brush connected directly or indirectly to the output shaft, for scrubbing the substrate on the spin chuck in contact therewith, a press mechanism moving the sponge brush downward together with the output shaft, for pressing the sponge brush against the substrate on the spin chuck, and a rotation drive mechanism provided above the press mechanism at a position where the rotation drive mechanism is capable of being engaged with the output shaft, for directly rotating the sponge brush by engaging with the output shaft.

Abstract: A scrub washing apparatus comprises a spin chuck for holding a substrate to be processed substantially horizontally, a nozzle for supplying a washing liquid to the substrate mounted on the spin chuck, an arm vertically and horizontally movably supported, an output shaft provided at the arm, a sponge brush connected directly or indirectly to the output shaft, for scrubbing the substrate on the spin chuck in contact therewith, a press mechanism moving the sponge brush downward together with the output shaft, for pressing the sponge brush against the substrate on the spin chuck, and a rotation drive mechanism provided above the press mechanism at a position where the rotation drive mechanism is capable of being engaged with the output shaft, for directly rotating the sponge brush by engaging with the output shaft.

Abstract: A drive unit 42 for driving a brush 8 is provided on a tip of a rotatable arm 26. The drive unit 42 includes a motor 61 for driving the processing member 24 having a brush 58 for rotation and an adjustment mechanism 45 for adjusting a force to urge the processing member 24 against a wafer W. With no intermediary of a flexible transmitting means, such as a belt, the processing member 24 is securely joined to the motor 61 through a shaft 55 and driven by the motor 61 directly. The adjustment mechanism 45 is constituted by an electromagnetic actuator which includes a stationary element 46 and a movable element 48 capable of elevating along the stationary element 46. The motor 61 is coupled to the armature 48. The adjustment mechanism 45 controls the position of the processing member 24 with respect to the upward and downward direction as well as the force to urge the processing member 24 against a wafer W.

Abstract: An apparatus for cleaning both sides of a substrate, incorporating a spin chuck for holding a substrate such that contact with at least a central portion of the substrate is prevented, a motor having a hollow shaft connected to the spin chuck to transmit rotating force to the spin chuck, a front-side cleaning mechanism for cleaning a surface of the substrate held by the spin chuck, and a back-side cleaning mechanism for rinsing a back side of the substrate held by the spin chuck, wherein the back-side cleaning mechanism is disposed to face the back side of the substrate held by the spin chuck through hollow portions of the hollow shaft.

Abstract: A wafer drying apparatus incorporated in a semiconductor wafer cleaning system includes a bath for storing IPA. A heater for generating an IPA vapor is arranged on the bath. The bath is surrounded by a housing. The housing has opening portions at three positions. The opening portions are opened/closed by shutters. A sensor for detecting a fire and a nozzle for discharging CO.sub.2 gas into the bath are arranged around the bath. A plurality of wafers are held by a chuck of a convey robot and are conveyed from the outside of the housing into the housing via the opening portions. When a fire is detected by the sensor, the chuck immediately retreats from the housing, and the shutters are closed. Signals for closing the shutters are transmitted to shutter drive sources again 10 seconds after the fire is detected, and discharging of CO.sub.2 gas is started 20 seconds after the fire is detected.

Abstract: A substrates-cleaning apparatus comprising process vessels in which washing solutions are contained, a chuck mechanism having a first substrate holder section for carrying silicon wafers to the process vessels while holding them in it, and a boat mechanism having a second substrate holder section for receiving the wafers from the chuck mechanism and for supporting the wafers in the washing solutions, wherein said second substrate holder section comprises base members made of erosion and heat resistant material, and receiver members attached to the base members, having a plurality of substrate holding grooves thereon, and made of erosion and heat resistant synthetic resin substantially same in softness as or softer than the wafers.

Abstract: The present invention relates to a cleaning apparatus comprising a plurality of processing tanks containing cleaning liquids, a conveyor mechanism for conveying an object to be cleaned and immersing the object to be cleaned into the processing tanks, a dilutent liquid supply device for supplying a dilutent liquid through a piping-system in order to dilute waste liquid from the processing tanks, and a waste liquid sump for collecting diluted waste liquid. The waste liquid sump is provided with a temperature measurement device for detecting the temperature of waste liquid in the waste liquid sump, and the amount of dilutent liquid supplied from the dilutent liquid supply device is controlled by a temperature control device in accordance with a temperature measurement result from the temperature measurement device. The cleaning apparatus is also provided with a fixing device for joints of the piping system.

Abstract: A cleaning device comprises at least one cleaning tub containing a cleaning liquid, a chamber housing the cleaning tub, a mechanism for taking an article to be cleaned in/out of the cleaning liquid in the cleaning tub, and a shutter for shutting the inside of the chamber from the outside thereof. The shutter opens when a cleaned material is conveyed in/out of the chamber, thereby passing the cleaned material there through. A clean air supplying unit for forming downflow of clean air around the cleaning tub is provided on the upper portion of the chamber. A exhausting unit for sucking the clean air passing around the cleaning tub and exhausting the air out of the chamber is provided on the lower portion of the chamber.