Abstract: A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: An electronic device includes a substrate, a first conductive material layer formed on the substrate, a patterning layer formed on the first conductive material layer, the patterning layer including first and second patterning layer parts having different critical surface tension, an insulation layer formed on the second patterning layer part of the patterning layer, the insulation layer including first and second insulation layer parts having different critical surface tension, and a second conductive material layer formed on the first patterning layer part and the first insulation layer part.

Abstract: An electron device includes at least an electrode layer, a semiconductor layer and an insulator layer laminated on a substrate, wherein the insulator layer contains a polyimide material obtained by using at least one of a polyamic acid and derivatives of the polyamic acid, the polyamic acid being obtained by reacting one or more of tetracarbonic acid dianhydride compounds selected from the group consisting of a tetracarbonic anhydride and derivatives of the tetracarbonic anhydride, with a diamine compound, the tetracarbonic dianhydride compound containing one or more components of tetracarbonic dianhydride compound selected from a specific group of tetracarbonic acid dianhydrides and the derivatives thereof.

Abstract: A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.