Abstract: A non-ohmic composition including a base elastomer and a plurality of non-ohmic particles, wherein, in a case of comparing volume resistivities ? for the non-ohmic composition within a range of E?Eth for the non-ohmic composition not elongated, the E being an electric field strength applied to the non-ohmic composition, the ? being the volume resistivity of the non-ohmic composition, and the Eth being a threshold electric field strength at a point where an absolute value of a variation in a slope of log ? with respect to log E is maximum, the volume resistivity ? for the non-ohmic composition uniaxially elongated by 50% is 50 times or less the volume resistivity ? for the non-ohmic composition not elongated.

Abstract: A battery packaging material including a laminate that is provided with a barrier layer, a heat-fusible resin layer positioned on one surface side of the barrier layer, and a polyester film positioned on the other surface side of the barrier layer. When the infrared absorption spectrum on the surface of the polyester film in 18 directions at intervals of 10° from 0° to 180° is obtained using the total reflection method of Fourier transform infrared spectroscopy, the ratio (surface orientation degree, Ymax/Ymin) of the maximum value Ymax and the minimum value Ymin of the ratio (Y1340/Y1410) of the absorption peak intensity Y1340 in 1340 cm?1 and the absorption peak intensity Y1410 in 1410 cm?1 in the infrared absorption spectrum is in the range of 1.4-2.7.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Abstract: An integrated device package is disclosed. The integrated device package can include a carrier that has a multilayer structure having a first layer and a second layer. The first layer at least partially defines a lower side of the carrier. An electrical resistance of the second layer is greater than an electrical resistance of the first layer. The integrated device package can include a microelectronicmechanical systems die that is mounted on an upper side of the carrier opposite the lower side. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

Abstract: An integrated device package is disclosed. The integrated device package can include a printed circuit board and a microelectronicmechanical systems die that is at least partially disposed within the printed circuit board and electrically coupled to the printed circuit board. The integrated device package can include a filler material that is at least partially disposed between the microelectronicmechanical systems die and the printed circuit board. The integrated device package can include a lid that is coupled to the printed circuit board. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

Abstract: An integrated device package is disclosed. The integrated device package can include a carrier that has an opening extending at least partially through a thickness of the carrier. The integrated device package can include a microelectronicmechanical systems die that is at least partially disposed in the opening and mechanically and electrically coupled to the carrier. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

Abstract: A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Abstract: A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

Abstract: A surface acoustic wave filter is disclosed. The surface acoustic wave filter includes a substrate, and first and second surface acoustic wave filter structures disposed on first and second main surfaces of the substrate, respectively. The first surface acoustic wave filter structure includes a first piezoelectric layer a plurality of first surface acoustic wave resonators formed on a top surface of the first piezoelectric layer, and a first wiring layer connecting the first surface acoustic wave resonators to each other. The second surface acoustic wave filter structure includes a second piezoelectric layer, a plurality of second surface acoustic wave resonators formed on a bottom surface of the second piezoelectric layer, and a second wiring layer connecting the second surface acoustic wave resonators to each other. A plurality of through electrodes extends through the substrate, the first piezoelectric layer, and the second piezoelectric layer.

Abstract: A piezoelectric microelectromechanical system microphone comprises a support substrate, a membrane including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the membrane, and a compliant anchor including a trench defined in the support substrate about a portion of a perimeter of the membrane to increase sensitivity of the piezoelectric microelectromechanical system microphone.

Abstract: The invention provides: a gas sensor device that is capable of removing a component adsorbed on a gas sensor by relatively simple means and easily restoring a signal baseline of the gas sensor to a constant state; and a method for removing a gas component. The gas sensor device according to an embodiment of the invention includes a gas sensor and cleaning means that contains a liquid for cleaning the gas sensor. The gas sensor includes a sensor main body that is capable of detecting a characteristic parameter of a component present in a gas phase or a liquid phase, and a sensitive membrane that is coated on a surface of the sensor main body and is durable against the liquid.

Abstract: A stress sensor comprises: a diaphragm; an intermediate layer disposed on a surface of the diaphragm; a sensitive membrane disposed on the intermediate layer; and a piezoresistive element disposed in a region of the diaphragm in contact with an outer edge of the intermediate layer.

Abstract: An input operation detector includes an operation detection electrode configured to detect an input operation from a capacitance change resulting from an approaching detection subject and a wetting detection electrode arranged next to the operation detection electrode. Water from an outer surface of a vehicle, when the vehicle is wet, collects at a location referred to as a water collection portion, and the wetting detection electrode is closer to the water collection portion than the operation detection electrode. If the water collection portion does not include water, the operation detection electrode has a greater capacitance change sensitivity than the wetting detection electrode to the approach of the detection subject. If the water collection portion includes water, the wetting detection electrode has a greater capacitance change sensitivity than the operation detection electrode to the water in the water collection portion.

Abstract: The invention provides: a gas sensor device that is capable of removing a component adsorbed on a gas sensor by relatively simple means and easily restoring a signal baseline of the gas sensor to a constant state; and a method for removing a gas component. The gas sensor device according to an embodiment of the invention includes a gas sensor and cleaning means that contains a liquid for cleaning the gas sensor. The gas sensor includes a sensor main body that is capable of detecting a characteristic parameter of a component present in a gas phase or a liquid phase, and a sensitive membrane that is coated on a surface of the sensor main body and is durable against the liquid.

Abstract: A stress sensor comprises: a diaphragm; an intermediate layer disposed on a surface of the diaphragm; a sensitive membrane disposed on the intermediate layer; and a piezoresistive element disposed in a region of the diaphragm in contact with an outer edge of the intermediate layer.

Abstract: A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1?yN (0<y?1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.

Abstract: A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0<y?1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.

Abstract: The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1, wherein a back surface 7 of the semiconductor layers 4 exposed by removal of the substrate 1 or an outermost layer 5 of the semiconductor layers 4 is provided as a radiating surface 8 for radiating light emitted from the emitting layer 3 to the outside, and able to provide a higher emission intensity from smaller electrical power because the absence of a substrate greatly improves the radiation efficiency of light.

Abstract: A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Tl, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0<y?1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.

Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.