Abstract: An information processing system includes a first information processing device and a second information processing device. The first information processing device is configured to receive the atomic information from the second information processing device, calculate a processing result corresponding to the atomic information by inputting the atomic information into a neural network, and transmit the processing result to the second information processing device. The second information processing device is configured to transmit atomic information to the first information processing device.

Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (GO). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (GO), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

Abstract: According to embodiments, a magnetic disk device includes a magnetic disk, a magnetic head, and a controller. In the magnetic disk, a plurality of servo sectors is arranged in a circumferential direction. Servo information including a post code indicating a repeatable runout (RRO) correction amount is written to each of the plurality of servo sectors. The magnetic head writes and reads data to and from the magnetic disk. In positioning control for the magnetic head, when a read error of a first post code continuously occurs, the controller uses a first RRO correction value, which is different from a second RRO correction value based on the RRO correction value indicated by the first post code. The first post code is a post code of a first servo sector, which is one of the plurality of servo sectors.

Abstract: A photoelectric fiber includes a fiber including a core through which light is guided; an electrical unit formed continuously with the fiber, the electrical unit being configured to house a photoelectric conversion chip including a photoelectric conversion element; and an external electrode formed on a front surface of at least one of the fiber or the electrical unit, wherein the photoelectric conversion chip is optically connected to the core and electrically connected to the external electrode.

Abstract: A controller provides a plurality of first sections with numerical information on a first scale. The plurality of first sections are obtained by dividing a recording surface of a magnetic disk in units of first memory areas in each of which a first volume of data can be written by an SMR method. The first scale corresponds to a sequence of the first sections. The controller provides a plurality of second sections with numerical information on a second scale. The plurality of second sections are obtained by dividing the recording surface of the magnetic disk in units of second memory areas in each of which the first volume of data can be written by a CMR method. The second scale corresponds to a sequence of the second sections. The controller executes a plurality of commands in order based on a numerical information on the first scale or the second scale.

Abstract: The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×1014 atoms/cm3 or less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.

Abstract: A process for preparing a diazabicyclooctane compound represented by the following formula (I): wherein A represents RcO—; B represents NH or NC1-6 alkyl; C represents a benzyl group; Rc represents a C1-6 alkyl group; A is substituted with one substituent Fn1, wherein Fn1 represents an azetidine group; the process including: (a) silylating the compound represented by the following formula (IV-c): wherein in the formula (IV-c), OBn represents benzyloxy, and (b) carrying out an intramolecular urea formation reaction.

Abstract: A process for preparing a diazabicyclooctane compound represented by the following formula (I): wherein A represents RcO—; B represents NH or NC1-6 alkyl; C represents a benzyl group; Rc represents a C1-6 alkyl group; A is substituted with one substituent Fn1, wherein Fn1 represents an azetidine group; the process including: (a) silylating the compound represented by the following formula (IV-c): wherein in the formula (IV-c), OBn represents benzyloxy, and (b) carrying out an intramolecular urea formation reaction.

Abstract: According to one embodiment, a first storage area and a second storage area in which a plurality of tracks are set are provided in a radial direction of a magnetic disk. A plurality of post codes corresponding to the second storage area is stored in the first storage area. A controller controls first processing of reading a plurality of post codes from the first storage area and writing the plurality of read post codes in servo area of the second storage area. In the first processing, the controller controls both second processing and third processing in a state where a write head is located on a first track. The second processing is processing of writing a post code among the plurality of read post codes in a servo area. The third processing is processing of writing user data in a data area or reading user data from a data area.

Abstract: A controller provides a plurality of first sections with numerical information on a first scale. The plurality of first sections are obtained by dividing a recording surface of a magnetic disk in units of first memory areas in each of which a first volume of data can be written by an SMR method. The first scale corresponds to a sequence of the first sections. The controller provides a plurality of second sections with numerical information on a second scale. The plurality of second sections are obtained by dividing the recording surface of the magnetic disk in units of second memory areas in each of which the first volume of data can be written by a CMR method. The second scale corresponds to a sequence of the second sections. The controller executes a plurality of commands in order based on a numerical information on the first scale or the second scale.

Abstract: A crystalline form I of a compound represented by Formula (VII-1): having characteristic peaks appearing at lattice spacing (d) of 7.34, 5.66, 5.53, 5.30, 5.02, 4.66, 4.37, 4.28, 4.06, 3.68, 3.62, 3.47, 3.36, 3.30, 3.16, 3.11, 3.03, 2.99 and 2.50 ? in the powder X-ray diffraction pattern.

Abstract: According to one embodiment, a first storage area and a second storage area in which a plurality of tracks are set are provided in a radial direction of a magnetic disk. A plurality of post codes corresponding to the second storage area is stored in the first storage area. A controller controls first processing of reading a plurality of post codes from the first storage area and writing the plurality of read post codes in servo area of the second storage area. In the first processing, the controller controls both second processing and third processing in a state where a write head is located on a first track. The second processing is processing of writing a post code among the plurality of read post codes in a servo area. The third processing is processing of writing user data in a data area or reading user data from a data area.

Abstract: A crystalline form I of a compound represented by Formula (VII-1): having characteristic peaks appearing at lattice spacing (d) of 7.34, 5.66, 5.53, 5.30, 5.02, 4.66, 4.37, 4.28, 4.06, 3.68, 3.62, 3.47, 3.36, 3.30, 3.16, 3.11, 3.03, 2.99 and 2.50 ? in the powder X-ray diffraction pattern.

Abstract: A process for preparing a diazabicyclooctane compound represented by the following formula (I): wherein A represents RcO—; B represents NH or NC1-6 alkyl; C represents a benzyl group; Rc represents a C1-6 alkyl group; A is substituted with one substituent Fn1, wherein Fn1 represents an azetidine group; the process including: (a) silylating the compound represented by the following formula (IV-c): wherein in the formula (IV-c), OBn represents benzyloxy, and (b) carrying out an intramolecular urea formation reaction.

Abstract: According to an embodiment, a magnetic disk device includes a magnetic disk including a first storage area and a second storage area different from the first storage area. In the second storage area, both of a first post code that is used to write user data in the first storage area by a first method and a second post code that is used to write user data in the first storage area by a second method are stored in advance. The first method is a method in which one track between two tracks adjacent to each other overlaps a part of the other track between the two tracks. The second method is a method in which two adjacent tracks do not overlap each other.

Abstract: A process for preparing a diazabicyclooctane compound represented by the following formula (I): wherein A represents RcO—; B represents NH or NC1-6 alkyl; C represents a benzyl group; Rc represents a C1-6 alkyl group; A is substituted with one substituent Fn1, wherein Fn1 represents an azetidine group; the process including: (a) silylating the compound represented by the following formula (IV-c): wherein in the formula (IV-c), OBn represents benzyloxy, and (b) carrying out an intramolecular urea formation reaction.

Abstract: The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×1014 atoms/cm3 or less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.

Abstract: According to an embodiment, a magnetic disk device includes a magnetic disk including a first storage area and a second storage area different from the first storage area. In the second storage area, both of a first post code that is used to write user data in the first storage area by a first method and a second post code that is used to write user data in the first storage area by a second method are stored in advance. The first method is a method in which one track between two tracks adjacent to each other overlaps a part of the other track between the two tracks. The second method is a method in which two adjacent tracks do not overlap each other.

Abstract: A crystalline form I of a compound represented by Formula (VII-1): having characteristic peaks appearing at lattice spacing (d) of 7.34, 5.66, 5.53, 5.30, 5.02, 4.66, 4.37, 4.28, 4.06, 3.68, 3.62, 3.47, 3.36, 3.30, 3.16, 3.11, 3.03, 2.99 and 2.50 ? in the powder X-ray diffraction pattern.

Abstract: A process for producing a compound of the following Formula (VII-CR): The process involving providing a compound represented by the following Formula (VI): in a case where the R3ONHC(?O) side chain in the compound of the Formula (VI) has a protecting group, removing the protecting group from the compound of the Formula (VI) with an acid, and adding an ester-based poor solvent to the resultant reaction solution to precipitate the compound of Formula (VII-CR), wherein in the compounds of the Formulas (VII-CR) and (VI), R3 is a C1-6 alkyl or a heterocycle.