Abstract: A hot isostatic pressing method is disclosed wherein workpieces are accommodated within a high pressure vessel and the interior of the high pressure vessel is filled with an inert gas of a high temperature and a high pressure to treat the workpieces. The method includes a cooling step which is performed after maintaining the interior of the high pressure vessel at a high temperature and a high pressure for a predetermined time and in which a liquid inert gas is fed into the high pressure vessel. According to this method it is possible to shorten the cycle time of an HIP apparatus.

Abstract: There is provided a method for obtaining a pure melt in which the impurities Mn, Al, Ti, Pb, Zn, and B are removed from molten cast iron and depletion of useful C and Si is suppressed, the method wherein an excess oxygen flame having a theoretical combustion ratio of fuel and oxygen (amount of oxygen (volume)×5/amount of fuel (volume)) of 1 to 1.5 is directly exposed to the surface of pre-melted molten cast iron, the temperature of the molten cast iron is held at 1250° C. or more and less than 1500° C. while the melt surface is superheated and an acidic slag is brought into contact with the melt, and an oxygen-containing gas is injected into the interior of the molten cast iron.

Abstract: An austenitic cast iron according to the present invention has Ni: from 7 to 15% by mass, and is characterized in that it comprises a base structure in which an austenite phase makes a major phase even in ordinary-temperature region by adjusting the respective compositions of Cr, Ni and Cu, excepting C and Si, so as to fall within predetermined ranges. In accordance with the present invention, it is possible to obtain an austenitic cast iron, which is excellent in terms of oxidation resistance and the like, inexpensively, while reducing the content of expensive Ni.

Abstract: A package for high pressure treatment of foods and a method for treating foods at a high pressure, both being able to easily determine whether the foods accommodated in the package have been subjected to a high pressure treatment or not. The package for high pressure treatment includes a package body for accommodating articles to be treated at a high pressure, and an irreversible pressure-sensitive marker disposed on the package body at a position capable of being seen from the exterior of the package body and adapted to develop color when pressurized.

Abstract: A hot isostatic pressing method is disclosed wherein workpieces are accommodated within a high pressure vessel and the interior of the high pressure vessel is filled with an inert gas of a high temperature and a high pressure to treat the workpieces. The method includes a cooling step which is performed after maintaining the interior of the high pressure vessel at a high temperature and a high pressure for a predetermined time and in which a liquid inert gas is fed into the high pressure vessel. According to this method it is possible to shorten the cycle time of an HIP apparatus.

Abstract: A hot isostatic pressing apparatus (HIP apparatus) comprises a vertically cylindrical high-pressure vessel comprising a high-pressure cylinder 1 and upper and lower lids 2 and 3; a bottomed cylindrical casing 6 capable of housing workpieces 9 and a resistance-wire heater 11, a heat insulating structure 16 equipped with a gas flow regulating valve 15 and formed in a bottomed cylindrical shape on the outside of the casing 6 so as to cover the casing 6, and a heat sink 17 having a water cooling mechanism provided in the space defined by the heat insulating structure 16 and the inner surface of the high-pressure cylinder 1, which are provided within the high-pressure vessel; and a pressure medium gas stirring fan 12 for promoting the temperature uniformity of the space of the treatment chamber 7 for housing the workpieces 9, the stirring fan being arranged on the lower lid 3 side within the casing 6, whereby the cooling to a temperature range of 100° C.

Abstract: A treatment chamber for heating and pressing workpieces and a heat insulating structure which covers the treatment chamber sideways and from above are provided within a high-pressure vessel. Below the treatment chamber are disposed a base heater for heating a pressure medium gas and a fan for supplying the pressure medium gas in a heated state into the treatment chamber and stirring the heated gas. The workpieces can be held on the heat insulating structure side, and the heat insulating structure and the workpieces can be taken out from the interior of the high-pressure vessel and can be conveyed together separately from a lower lid of the high-pressure vessel. A hot isostatic pressing apparatus is provided less expensively which can heat and press workpieces at a relatively low temperature of not higher than 600° C. Besides, it is possible to shorten the cycle time in HIP.

Abstract: The temperature measuring apparatus according to the present invention is of the high melting point metal carbide—carbon system material thermocouple type. According to this temperature measuring apparatus, it is possible to measure temperatures from a room temperature range to a high temperature range in excess of 2000° C. continuously, stably and with good accuracy. A constitution is preferable wherein a rod-like member formed of high melting point metal carbide is inserted into a pipe-like member with a bottom formed of carbon system material, and connected at the bottom to serve as a temperature measuring portion.

Abstract: A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.

Abstract: While a workpiece is heated and pressed by one of a pair of high-pressure vessels, a workpiece being pressed by the other high-pressure vessel is placed in a heated state. In the reducing process after termination of heating and pressing treatment of the workpiece by one high-pressure vessel, both the high-pressure vessels are placed in communication, and the pressure medium gas released from one high-pressure vessel is poured into the other high-pressure vessel. After pressures of both the high-pressure vessels have assumed a nearly balanced state, the pressure medium gas is sucked out of one high-pressure vessel by a compressor and pressed, and is poured into the other high-pressure vessel, and the workpiece is heated and pressed by the other high-pressure vessel. By the method as described, considerable shortening of cycle time of HIP treatment is achieved, and the HIP treatment can be carried out with high efficiency.

Abstract: In reforming mechanical characteristics of a precipitation hardening type Al alloy casting, the Al alloy casting is subjected to a high temperature/high pressure treatment, then the pressure is reduced while maintaining the temperature of the Al alloy casting, and subsequently the Al alloy casting is subjected to solution treatment, quenching, and aging in this order. According to this method, mechanical characteristics of the casting can be reformed efficiently and economically and there can be obtained a reformed product of good quality.

Abstract: A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.

Abstract: The temperature measuring apparatus according to the present invention is of the high melting point metal carbide—carbon system material thermocouple type. According to this temperature measuring apparatus, it is possible to measure temperatures from a room temperature range to a high temperature range in excess of 2000° C. continuously, stably and with good accuracy. A constitution is preferable wherein a rod-like member formed of high melting point metal carbide is inserted into a pipe-like member with a bottom formed of carbon system material, and connected at the bottom to serve as a temperature measuring portion.

Abstract: The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

Abstract: While a workpiece is heated and pressed by one of a pair of high-pressure vessels, a workpiece being pressed by the other high-pressure vessel is placed in a heated state. In the reducing process after termination of heating and pressing treatment of the workpiece by one high-pressure vessel, both the high-pressure vessels are placed in communication, and the pressure medium gas released from one high-pressure vessel is poured into the other high-pressure vessel. After pressures of both the high-pressure vessels have assumed a nearly balanced state, the pressure medium gas is sucked out of one high-pressure vessel by a compressor and pressed, and is poured into the other high-pressure vessel, and the workpiece is heated and pressed by the other high-pressure vessel. By the method as described, considerable shortening of cycle time of HIP treatment is achieved, and the HIP treatment can be carried out with high efficiency.

Abstract: A treatment chamber for heating and pressing workpieces and a heat insulating structure which covers the treatment chamber sideways and from above are provided within a high-pressure vessel. Below the treatment chamber are disposed a base heater for heating a pressure medium gas and a fan for supplying the pressure medium gas in a heated state into the treatment chamber and stirring the heated gas. The workpieces can be held on the heat insulating structure side, and the heat insulating structure and the workpieces can be taken out from the interior of the high-pressure vessel and can be conveyed together separately from a lower lid of the high-pressure vessel. A hot isostatic pressing apparatus is provided less expensively which can heat and press workpieces at a relatively low temperature of not higher than 600° C. Besides, it is possible to shorten the cycle time in HIP.

Abstract: A hot isostatic pressing apparatus (HIP apparatus) comprises a vertically cylindrical high-pressure vessel comprising a high-pressure cylinder 1 and upper and lower lids 2 and 3; a bottomed cylindrical casing 6 capable of housing workpieces 9 and a resistance-wire heater 11, a heat insulating structure 16 equipped with a gas flow regulating valve 15 and formed in a bottomed cylindrical shape on the outside of the casing 6 so as to cover the casing 6, and a heat sink 17 having a water cooling mechanism provided in the space defined by the heat insulating structure 16 and the inner surface of the high-pressure cylinder 1, which are provided within the high-pressure vessel; and a pressure medium gas stirring fan 12 for promoting the temperature uniformity of the space of the treatment chamber 7 for housing the workpieces 9, the stirring fan being arranged on the lower lid 3 side within the casing 6, whereby the cooling to a temperature range of 100° C.

Abstract: A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.

Abstract: A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.

Abstract: An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.