Patents by Inventor Takao Kawamura

Takao Kawamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4997736
    Abstract: The present invention relates to an electrophotographic sensitive member comprising a photoconductive layer formed of amorphous silicon carbide and an organic semiphotoconductive layer piled up.Photoconductive materials of an electrophotographic sensitive member include inorganic materials, such as Se, Se-Te, As.sub.2 Se.sub.3, ZnO, CdS and amorphous silicon, and various kinds of organic material. Of them, Se has been first used, and then also ZnO, CdS and amorphous silicon have been practically used. On the other hand, as to the organic materials, PVK--TNF has been first practically used, and then a separated function type sensitive member, in which a function of generating an electric charge and a function of transporting the electric charge are put in charge by separate materials, has been proposed. The organic materials have been remarkably developed by this separated function type sensitive member.
    Type: Grant
    Filed: August 25, 1989
    Date of Patent: March 5, 1991
    Assignee: Kyocera Corporation
    Inventors: Takao Kawamura, Naooki Miyamoto, Hiroshi Itoh, Hitoshi Takemura
  • Patent number: 4977050
    Abstract: The present invention relates to an electrophotographic sensitive member, in particular to an electrophotographic sensitive member capable of enhancing a photosensitivity on both a short wavelength side and a long wavelength side and a charge acceptance and thus suitable for a plain paper copying machine (PPC).The stabilized operation characteristics and durability have been required for an electrophotographic sensitive member drum carried on instruments such as high-speed copying machine and laser beam printer.Amorphous silicon has been watched with interest for this requirement in view of superior abrasion resistance, heat resistance, antipollution property, photosensitivity characteristic and the like.However, such the amorphous silicon photosensitive member shows the higher photosensitivity on the long wavelength side.
    Type: Grant
    Filed: December 21, 1988
    Date of Patent: December 11, 1990
    Assignee: Kyocera Corporation
    Inventors: Takao Kawamura, Naooki Miyamoto, Hiroshi Ito, Hitoshi Takemura, Kokichi Ishibutsu
  • Patent number: 4945282
    Abstract: There are disclosed an image display panel having an antistatic film comprising a SiO.sub.2 coat of transparent and electroconductive properties on the front surface of said panel; the coat containing fine particles of at least one compound selected from electroconductive metal oxides and hygroscopic metal salts; and a process for producing the same.
    Type: Grant
    Filed: December 8, 1988
    Date of Patent: July 31, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Hiromitsu Kawamura, Takao Kawamura, Katsumi Kobara, Yoshishige Endo
  • Patent number: 4906546
    Abstract: The present invention relates to an electrophotographic sensitive member, in particular to a divided function type electrophotographic sensitive member formed of amorphous silicon and amorphous silicon carbide capable of particularly widening an optical band gap range to heighten an optical sensitivity.Stabilized operation characteristics and durability are required for an electrophotographic sensitive member drum carried on instruments such as a high-speed copying machine and a laser beam printer. As for these requirements, hydrogenized amorphous silicon is being watched with interest from the viewpoints of superior abrasion resistance, heat resistance, anti-pollution property, optical sensitive characteristic and the like.
    Type: Grant
    Filed: September 15, 1988
    Date of Patent: March 6, 1990
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Naooki Miyamoto, Hiroshi Ito, Hitoshi Takemura, Kazumasa Ohkawa, Kokichi Ishibitsu
  • Patent number: 4882252
    Abstract: The present invention relates to an electrophotographic sensitive member, in particular to an electophotographic sensitive member, in which a residual potential is reduced and a background smearing is prevented from being produced, and further to an electrophotographic sensitive member capable of carrying out a high-speed copying suitable for a semiconductor laser beam printer.A photosensitive member used in instruments, such as super-high-speed coying machine and laser beam printer, is used for a long time at a high-speed, so that the stability and durability are required for the operation.To this requirement, amorphous silicon hydride has been watched with interest in view of heat-resistance, abrasion-resistance, anti-pollution, photosensitive characteristic and the like.
    Type: Grant
    Filed: May 23, 1988
    Date of Patent: November 21, 1989
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Naooki Miyamoto, Hiroshi Ito, Hitoshi Takemura, Kazumasa Ohkawa, Kokichi Ishibitsu
  • Patent number: 4826748
    Abstract: The present invention relates to an electrophotographic sensitive member for use in a laser line printer.A laser line printer using a laser beam as a recording member has been known for a small-sized, light, low power consumption, high-density and high-speed recording method. For example, a semi-conductor laser printer and an electrophotographic sensitive member mainly formed of amorphous silicon used therein are being watched with interest.However, since this laser beam is monochromatic, a laser beam incident upon the inside of a photosensitive layer is very much inclined to be not sufficiently absorbed by the photosensitive layer to reach an electrically conductive substrate and be reflected at the surface of the electrically conductive substrate.
    Type: Grant
    Filed: August 4, 1987
    Date of Patent: May 2, 1989
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Yoshikazu Nakayama
  • Patent number: 4820268
    Abstract: A transfusion apparatus including a pump section for sequentially pressing and blocking a transfusion tube to feed a liquid, a detecting section for detecting a given cycle of pump operation in the pump section, and a drive-control for driving and controlling the pump section is disclosed, in which the transfusion tube on an upstream side above the pump section is provided with a dropping cylinder on which is arranged a detector for counting the number of droplets and that the apparatus is further provided with a comparator for comparing the number of droplets in the given cycle of the pump operation with a predetermined value to judge a type of a transfusion set.
    Type: Grant
    Filed: October 30, 1987
    Date of Patent: April 11, 1989
    Assignee: Nikkiso Co., Ltd.
    Inventors: Takao Kawamura, Tetsuya Miyatake
  • Patent number: 4689284
    Abstract: The present invention relates to improvements in a substrate for producing an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon. An electrophotographic sensitive member, which is superior in moldability, corrosion resistance, strength, charging electric potential and the like, is formed when an aluminium material, which contains at least one of iron and manganese or a combination of each at 0.30 or less % by weight, is used as a substrate on which a photoconductive layer formed with amorphous silicon is laminated; and/or the surface roughness of said substrate is 0.5 S or less; and/or an aluminium substrate containing magnesium at 0.5 to 10.0% by weight is used.
    Type: Grant
    Filed: May 12, 1986
    Date of Patent: August 25, 1987
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Keibun Ejima, Naooki Miyamoto, Hisashi Higuchi, Yasuo Nishiguchi
  • Patent number: 4675264
    Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
    Type: Grant
    Filed: July 15, 1986
    Date of Patent: June 23, 1987
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Hideaki Iwano, Naooki Miyamoto, Yasuo Nishiguchi
  • Patent number: 4666808
    Abstract: The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
    Type: Grant
    Filed: March 28, 1984
    Date of Patent: May 19, 1987
    Assignee: Kyocera Corp.
    Inventors: Takao Kawamura, Hideaki Iwano, Naooki Miyamoto, Yasuo Nishiguchi
  • Patent number: 4645304
    Abstract: This invention relates to a liquid crystal device applying an optoelectronic effect of liquid crystal.This invention aims at the provision of a liquid crystal device comprising; a liquid crystal cell which has a transparent substrate having interdigital electrodes and a transparent substrate having an opposite electrode, the transparent substrates being disposed close to each other so as to allow both the electrodes to be opposite to each other, and which charges liquid crystal between both the transparent substrates; and a polarizer having polarization axis extending in parallel to the orientation of the liquid crystal caused by the electric field between the interdigital electrodes; thereby responding at high speed, having a high contrast ratio in ON and OFF conditions of the transmission light, and being small-sized and inexpensive to produce.
    Type: Grant
    Filed: August 20, 1982
    Date of Patent: February 24, 1987
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Akihiko Sugimura
  • Patent number: 4624906
    Abstract: The present invention relates to an electrophotographic sensitive member comprising an amorphous fluorinated silicon photoconductive layer.
    Type: Grant
    Filed: September 24, 1984
    Date of Patent: November 25, 1986
    Assignees: Kyocera Corporation, Takao Kawamura
    Inventors: Takao Kawamura, Yoshikazu Nakayama, Koji Akiyama
  • Patent number: 4585311
    Abstract: This invention relates to a liquid crystal device applying an optoelectronic effect of liquid crystals.
    Type: Grant
    Filed: January 6, 1983
    Date of Patent: April 29, 1986
    Assignee: Kyocera Corporation
    Inventors: Takao Kawamura, Akihiko Sugimura
  • Patent number: 4491626
    Abstract: The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. According to first embodiment of the invention, the photosensitive member comprises an electrically conductive substrate, an amorphous silicon-germanium photoconductive layer having a thickness of about 0.1 to 3 microns, and an amorphous silicon photoconductive layer of 5 to 30 micron thick formed on the amorphous silicon-germanium photoconductive layer. Second embodiment of the photosensitive member comprises a substrate, an amorphous silicon semiconductor layer of 5 to 100 micron thick and an amorphous silicon-germanium photoconductive layer formed on the amorphous silicon semiconductor layer.
    Type: Grant
    Filed: March 7, 1983
    Date of Patent: January 1, 1985
    Assignees: Minolta Camera Kabushiki Kaisha, Takao Kawamura, Kyocera Corp.
    Inventors: Takao Kawamura, Masazumi Yoshida
  • Patent number: 4489149
    Abstract: The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.
    Type: Grant
    Filed: December 19, 1983
    Date of Patent: December 18, 1984
    Assignees: Minolta Camera Kabushiki Kaisha, Takao Kawamura, Kyocera Corporation
    Inventors: Takao Kawamura, Masazumi Yoshida
  • Patent number: 4451546
    Abstract: The invention disclosed relates to a photosensitive member having excellent photosensitivity characteristics in the visible light region as well as in the near infrared region. The photosensitive member according to the invention comprises an electrically-conductive substrate, an amorphous silicon semiconductor layer, an amorphous silicon-germanium photoconductive layer formed on the semiconductor layer, and an amorphous silicon photoconductive layer formed the amorphous silicon-germanium photoconductive layer.
    Type: Grant
    Filed: March 7, 1983
    Date of Patent: May 29, 1984
    Assignees: Minolta Camera Kabushiki Kaisha, Takao Kawamura, Kyocera Corporation
    Inventors: Takao Kawamura, Masazumi Yoshida
  • Patent number: 4409311
    Abstract: A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.
    Type: Grant
    Filed: March 8, 1982
    Date of Patent: October 11, 1983
    Assignees: Minolta Camera Kabushiki Kaisha, Takao Kawamura, Kyoto Ceramic Co., Ltd.
    Inventors: Takao Kawamura, Yoshida Masazumi
  • Patent number: 4337412
    Abstract: In a cathode-ray tube provided with a direct-heating type cathode, a transformer through which the cathode is heated is disposed within the bulb of the cathode-ray tube. This improvement eliminates the instability of heating due to the contact resistance caused between the base pins of the cathode-ray tube to which the terminals of the cathode are connected and the socket pins to which the base pins are fitted.
    Type: Grant
    Filed: November 26, 1980
    Date of Patent: June 29, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Takao Kawamura, Kuniharu Osakabe
  • Patent number: 4291252
    Abstract: An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.
    Type: Grant
    Filed: November 20, 1979
    Date of Patent: September 22, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Aida, Shigehiko Yamamoto, Sadanori Taguchi, Isamu Yuito, Yukio Honda, Ushio Kawabe, Akira Misumi, Takao Kawamura, Hiroshi Fukushima, Yoshio Degawa
  • Patent number: 4273683
    Abstract: An oxide cathode wherein a base is made of an alloy comprising Ni as a main component and at least one reducing element selected from the group consisting of Mg, W, Zr, Si, Al and C, and the surface of the base is coated with an alkaline earth oxide layer containing at least BaO, the BaO content in the inner portion of the oxide layer contacting with the base being lower than that in the superficial portion of the oxide layer, if desired, forming a roughened layer made of powdered Ni or the like between the base and the inner portion of the oxide layer, can inhibit the formation of interface layer of, e.g. Ba.sub.3 WO.sub.6 and maintain stable thermion emitting characteristics for a long period of time.
    Type: Grant
    Filed: December 13, 1978
    Date of Patent: June 16, 1981
    Assignee: Hitachi, Ltd.
    Inventor: Takao Kawamura