Abstract: An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, <11-20> axes in the plane of the wurtzite type thin film 5 are parallel to <1-10> axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, <11-20> axes in the plane of the wurtzite type thin film 5 are parallel to <11-20> axes in the plane of the metal thin film 4.

Abstract: The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

Abstract: In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

Abstract: The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

Abstract: The invention has for its objects to provide a multilayer thin film including a ferroelectric thin film having much more improved properties on an Si substrate and its fabrication process as well as an electron device comprising the same. This object is achieved by the provision of a multilayer thin film formed on an Si substrate by epitaxial growth, which comprises a buffer layer formed on the Si substrate, which layer includes an oxide thin film, a perovskite oxide thin film formed on the buffer layer, which film has a (100) or (001) orientation, and a ferroelectric thin film epitaxially grown on the perovskite oxide thin film and its fabrication process as well as an electron device comprising the same.

Abstract: The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal.

Abstract: A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

Abstract: In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8.ltoreq.(Pb+Rn)/Ti.ltoreq.1.3 and 0.5.ltoreq.Pb/(Pb+Rn).ltoreq.0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

Abstract: A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.

Abstract: A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.

Abstract: On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

Abstract: On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

Abstract: The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

Abstract: The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available.Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

Abstract: A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.

Abstract: A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.

Abstract: A lubricant to be sprayed onto the surface of a steel material for forming a lubricant coat on the surface of the steel material to be forged. The lubricant comprises a particulate lubricant composed of thermally melting resin mixed with inorganic lubricant. The particulate lubricant is applied onto the surface of a steel material to be forged. Before or after applying the particulate lubricant onto the surface of the steel material, the surface of the steel material is heated. Consequently, the thermally melting resin melts and coheres with the inorganic lubricant over the surface of the steel material, resulting in the formation of a uniformly thick lubricant coat over the steel material. The lubricant coat prevents the steel material from being burnt in a forging device even during hot forging. The lubricant coat is fit for the forging of hard to work steel material. The lubricant coat also contributes to the decrease in forging cost, without deteriorating the forging environment.

Abstract: A method for forming a lubricant coat on a surface of steel slug to be forged and a forging device provided with a lubricant coat forming system. The method makes possible the forging of hard to work material, such as stainless steel. Highly durable parts can be manufactured easily. The durability of the metal molds of the forging device is increased, thereby decreasing the cost for the manufacture of the parts. In the method, the uniformly thick lubricant coat can be formed easily even on the transformed end surfaces of the material being worked, providing effective lubrication. The lubricant coat forming member can replace the oil lubrication of the related-art forging device of the inline type, in which the cut end surfaces of the material are not lubricated, without modifying the structure of the related-art forging device especially.

Abstract: An apparatus for continuously cooling a heated metal plate lying horizontally, which comprises: an upper cooling water ejecting means, arranged above the metal plate in parallel to the width direction thereof, for ejecting cooling water onto the upper surface of the metal plate; a water tank, arranged below the metal plate, for receiving cooling water; and a lower cooling water ejecting means having a lower cooling water ejecting bore, arranged in the water tank in parallel to the width direction of the metal plate. The lower cooling water ejecting means ejects, in the form of a jet stream, cooling water from the lower cooling water ejecting bore together with cooling water received in the water tank, onto the lower surface of the metal plate. The above-mentioned jet stream is surrounded by a jet stream guide duct arranged between the lower cooling water ejecting means and the lower surface of the metal plate.

Abstract: In continuous induction heat treatment of an elongated metal member, additional local induction heating is applied to an end portion or portions of the metal member, thereby to obtain uniform induction heating temperature distribution over the whole length of the metal member. The additional local heating or preheating the end portion of the metal member is performed by the use of a preliminary induction heating coil which is maintained in predetermined relative relationship with the metal member for a predetermined period of time.