Patents by Inventor Takao Sakamoto
Takao Sakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7541646Abstract: A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.Type: GrantFiled: February 12, 2007Date of Patent: June 2, 2009Assignee: Mitsubishi Electric CorporationInventors: Hitoshi Nagata, Takao Sakamoto, Naoki Nakagawa
-
Patent number: 7514364Abstract: In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a small load with the contact of the mirror surface with a hydrophilicity treatment liquid, thereby making the mirror surface hydrophilic, the hydrophilicity treatment liquid is an aqueous liquid which comprises an organic compound having at least one hydrophilic group and having a molecular weight of 100 or more, a basic nitrogen-containing organic compound and a surfactant, and which has a pH of 9.5 to 10.5.Type: GrantFiled: February 23, 2007Date of Patent: April 7, 2009Assignee: Covalent Materials CorporationInventor: Takao Sakamoto
-
Patent number: 7396707Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.Type: GrantFiled: November 30, 2006Date of Patent: July 8, 2008Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yoshihiko Toyoda, Takao Sakamoto, Kazuyuki Sugahara
-
Patent number: 7388569Abstract: A reflective liquid crystal display device is integrated with a liquid crystal display panel (1), detects display surface illuminance by a plurality of light sensors (10) provided in the vicinity of the display surface, and in accordance with the detection result, controls luminous intensity of a front light (lighting means) (19) using a lighting control circuit (22) so that the display surface illuminance becomes a predetermined magnitude. Even if the use environment of the reflective liquid crystal display device changes, or more specifically, intensity of external light shone from outside of the device into the display surface varies, the configuration allows controlling automatically the amount of emission from the front light to automatically maintain an appropriate display luminance and to reduce electric power consumption.Type: GrantFiled: December 9, 2002Date of Patent: June 17, 2008Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Masafumi Agari, Mitsuo Inoue, Takashi Yamamoto, Shigeyuki Yoshida, Takao Sakamoto
-
Publication number: 20070210353Abstract: A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.Type: ApplicationFiled: February 12, 2007Publication date: September 13, 2007Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hitoshi NAGATA, Takao Sakamoto, Naoki Nakagawa
-
Publication number: 20070207615Abstract: In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a small load with the contact of the mirror surface with a hydrophilicity treatment liquid, thereby making the mirror surface hydrophilic, the hydrophilicity treatment liquid is an aqueous liquid which comprises an organic compound having at least one hydrophilic group and having a molecular weight of 100 or more, a basic nitrogen-containing organic compound and a surfactant, and which has a pH of 9.5 to 10.5.Type: ApplicationFiled: February 23, 2007Publication date: September 6, 2007Inventor: Takao Sakamoto
-
Patent number: 7262433Abstract: A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 ?m) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 ?m) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.Type: GrantFiled: May 26, 2005Date of Patent: August 28, 2007Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kazuyuki Sugahara, Naoki Nakagawa, Yoshihiko Toyoda, Takao Sakamoto
-
Publication number: 20070087535Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.Type: ApplicationFiled: November 30, 2006Publication date: April 19, 2007Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yoshihiko Toyoda, Takao Sakamoto, Kazuyuki Sugahara
-
Patent number: 7176491Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.Type: GrantFiled: March 29, 2005Date of Patent: February 13, 2007Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yoshihiko Toyoda, Takao Sakamoto, Kazuyuki Sugahara
-
Publication number: 20060182307Abstract: To keep sounds emitted from a speaker apparatus in high quality. According to one embodiment of the present invention, a top layer and a back layer in a diaphragm of a speaker unit built in a speaker apparatus, and a reinforcement board for reinforcement which is interposed between the top layer and the back layer, and is disposed from the center part of diaphragm to the outer circumference part of diaphragm of the speaker diaphragm are provided. Thereby, unnecessary vibration caused by lack of the rigidity of the diaphragm can be prevented, and a possibility that the reinforcement board comes off or falls off can be remarkably reduced.Type: ApplicationFiled: January 31, 2006Publication date: August 17, 2006Applicant: Sony CorporationInventor: Takao Sakamoto
-
Publication number: 20060046363Abstract: A semiconductor device fabricating method includes forming an amorphous silicon film on a substrate irradiating the amorphous silicon film with laser light to transform at least a part of the amorphous silicon film into a polycrystalline silicon film, and oxidizing the surface of the polycrystalline silicon film in an atmosphere including oxygen, after the irradiation. The laser light is a linear beam having an energy-density gradient of at least 3 (mJ/cm2)/?m in a widthwise direction, and the linear beam is generated by transforming pulsed laser light with a wavelength in a range between 350 nm and 800 nm. The oxidation is performed in a saturated water vapor ambient at a pressure of at least 10 atmospheres and at a temperature in a range between 500° C. and 650° C. With this method, a semiconductor device with excellent crystallinity can be easily fabricated.Type: ApplicationFiled: August 31, 2004Publication date: March 2, 2006Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Mitsuo Inoue, Osamu Miyakawa, Takao Sakamoto
-
Publication number: 20050263770Abstract: A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 ?m) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 ?m) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.Type: ApplicationFiled: May 26, 2005Publication date: December 1, 2005Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Kazuyuki Sugahara, Naoki Nakagawa, Yoshihiko Toyoda, Takao Sakamoto
-
Publication number: 20050253195Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the source region, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The gate electrode is formed overlapping with and facing the channel region and the GOLD region. A semiconductor device is obtained, directed to improving source-drain breakdown voltage and AC stress resistance, and achieving desired current property.Type: ApplicationFiled: April 20, 2005Publication date: November 17, 2005Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yoshihiko Toyoda, Takao Sakamoto, Kazuyuki Sugahara, Naoki Nakagawa
-
Publication number: 20050236618Abstract: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.Type: ApplicationFiled: March 29, 2005Publication date: October 27, 2005Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yoshihiko Toyoda, Takao Sakamoto, Kazuyuki Sugahara
-
Publication number: 20050067553Abstract: A reflective liquid crystal display device is integrated with a liquid crystal display panel (1), detects display surface illuminance by a plurality of light sensors (10) provided in the vicinity of the display surface, and in accordance with the detection result, controls luminous intensity of a front light (lighting means) (19) using a lighting control circuit (22) so that the display surface illuminance becomes a predetermined magnitude. Even if the use environment of the reflective liquid crystal display device changes, or more specifically, intensity of external light shone from outside of the device into the display surface varies, the configuration allows controlling automatically the amount of emission from the front light to automatically maintain an appropriate display luminance and to reduce electric power consumption.Type: ApplicationFiled: December 9, 2002Publication date: March 31, 2005Inventors: Masafumi Agari, Mitsuo Inoue, Takashi Yamamoto, Shigeyuki Yoshida, Takao Sakamoto
-
Publication number: 20040034104Abstract: 2,2-Diphenylbutanamide derivatives represented by the following formula (1): 1Type: ApplicationFiled: April 14, 2003Publication date: February 19, 2004Inventors: Susumu Sato, Tetsuo Oka, Takao Sakamoto, Yoshihiko Kanamaru, Kinichi Mogi, Shinichi Morimoto, Norimitsu Umehara, Junzo Kamei
-
Patent number: 6632749Abstract: The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.Type: GrantFiled: April 29, 2002Date of Patent: October 14, 2003Assignees: Seiko Epson Corporation, Mitsubishi Denki Kabushiki KaisyaInventors: Mitsutoshi Miyasaka, Takao Sakamoto
-
Patent number: 6517422Abstract: A polishing apparatus which attaches the semi-conductor wafers 5 to the polishing plate 4 for performing the polishing as applying pressure the polishing cloth with the semi-conductor wafers, is provided with a guide ring 7 disposed outside of the polishing plate for pressing the polishing cloth separately from the polishing plate, a retainer ring 8 provided at the lower end of the guide ring for contacting the polishing cloth, and a weight 9 detachably mounted on the upper surface of the guide ring for adjusting the pressure to the polishing cloth.Type: GrantFiled: March 6, 2001Date of Patent: February 11, 2003Assignee: Toshiba Ceramics Co., Ltd.Inventors: Takao Sakamoto, Shinya Kawamoto, Katsuaki Kotari, Katsuyoshi Kojima, Masayoshi Saitou, Yoshihiko Hoshi
-
Publication number: 20020119607Abstract: The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.Type: ApplicationFiled: April 29, 2002Publication date: August 29, 2002Applicant: Seiko Epson CorporationInventors: Mitsutoshi Miyasaka, Takao Sakamoto
-
Patent number: 6407012Abstract: The method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured.Type: GrantFiled: August 25, 1999Date of Patent: June 18, 2002Assignees: Seiko Epson Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Mitsutoshi Miyasaka, Takao Sakamoto