Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

Abstract: A signal processing device according to one aspect of the present disclosure includes an acquisition unit, a counter, and a threshold changing unit. The acquisition unit acquires, of a plurality of electrical signals generated by a plurality of photoelectric conversion elements in response to incident light, a signal whose signal change amount exceeds a predetermined threshold as an event signal. The counter counts, of a plurality of event signals acquired by the acquisition unit, signals corresponding to noise. The threshold changing unit changes the threshold on the basis of the number of noise events obtained by the counter.

Abstract: A catalyst structure for synthesis gas production is used to produce a synthesis gas that includes carbon monoxide and hydrogen. The structure includes a carrier with a porous structure that comprises a zeolite-type compound; first catalyst particles that contain at least one iron-group element selected from the group consisting of nickel, iron, and cobalt; and a second catalyst that contains at least one transition metal element with redox capacity. The carrier includes, inside thereof, mutually communicating passages; the first catalyst particles are present at least in the passages of the carrier; and the second catalyst is present at least in the interior or on an outer surface of the carrier.

Abstract: A chemical mechanical polishing apparatus includes: an inner platen to support an inner polishing pad; an annular outer platen to support an outer polishing pad; a carrier head to hold a substrate; one or more motors to rotate the inner platen about a vertical axis at a first rotation rate and to rotate the outer platen about the vertical axis at a second rotation rate; and a controller configured to select values for multiple control parameters to minimize a difference between a target removal profile and an expected removal profile, the multiple control parameters including a first parameter representing a difference in rotational speeds between the inner and outer platens. The outer polishing pad can coaxially surround the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen can be separated by a gap.

Abstract: A chemical mechanical polishing apparatus includes an inner platen to support an inner polishing pad, aan annular outer platen to support an outer polishing pad, a carrier head to hold a substrate, a first motor to rotate the inner platen about a vertical axis at a first rotation rate, and a second motor to rotate the outer platen about the vertical axis at a second rotation rate. The outer polishing pad coaxially surrounds the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen are separated by a gap.

Abstract: A carrier head for chemical mechanical polishing includes a housing for attachment to a drive shaft, a membrane assembly arranged beneath the lower carrier body, and a flexure. The membrane assembly includes a membrane support and a flexible membrane secured to the membrane support to defining a plurality of pressurizable lower chambers, with the flexible membrane having a lower surface that provides a substrate mounting surface. A flexible seal forms a pressurizable upper chamber between the housing and the membrane support. The flexure connects the membrane support to the housing, and the flexure extends through the pressurizable upper chamber.

Abstract: Chemical mechanical polishing system and method include a substrate is loaded into a carrier head having a housing having an upper carrier body and a lower carrier body, and a membrane assembly beneath the lower carrier body. A space between the lower carrier body and the membrane assembly defines a pressurizable chamber, a distance from a sensor in the lower carrier body to the membrane assembly is measured, and pressure in the pressurizable chamber is controlled based on the measured distances to maintain a consistent total downforce on the membrane assembly as the distance between the sensor and the membrane assembly changes.

Abstract: A catalyst for synthesizing liquefied petroleum gas according to the present invention includes: a Cu—Zn-based catalytic material; and an MFI-type zeolite catalytic material supporting Pt, in which a ratio (M1/(M1+M2)) of mass (M1) of the Cu—Zn-based catalytic material to total mass of the mass (M1) of the Cu—Zn-based catalytic material and mass (M2) of the MFI-type zeolite catalytic material is 0.30 or more and 0.95 or less.

Abstract: A catalyst for synthesizing liquefied petroleum gas according to the present invention includes: a Cu—Zn-based catalytic material; and an MFI-type zeolite catalytic material supporting Pt, in which a ratio of the molar number of SiO2 to the molar number of Al2O3 contained in the MFI-type zeolite catalytic material (molar number of SiO2/molar number of Al2O3) is 20 or more and 60 or less.

Abstract: A catalyst for synthesizing liquefied petroleum gas according to the present invention includes: a Cu—Zn-based catalytic material; and an MFI-type zeolite catalytic material supporting a noble metal, in which the MFI-type zeolite catalytic material contains P, and a ratio of mass (MP) of P in the MFI-type zeolite catalytic material to mass (M2) of the MFI-type zeolite catalytic material is more than 0 mass % and less than 4.5 mass %.

Abstract: A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.

Abstract: A motion of a subject is detected, and an image is captured at timing desired by a user. An imaging device includes a first sensor, a position information acquiring unit, a second sensor, an acquisition condition generating unit, and a control unit. The first sensor acquires object information that is information regarding an object. The position information acquiring unit acquires position information that is information instructing the position of the object at the time of acquiring the object information. The second sensor acquires motion information that is information regarding the motion of the object. The acquisition condition generating unit generates an acquisition condition of the object information on the basis of the acquired position information and the acquired motion information. The control unit performs control to cause the first sensor to acquire the object information on the basis of the generated acquisition condition.

Abstract: Provided are a useful hydrocarbon production method and a useful hydrocarbon production device using methane-containing hydrocarbon and carbon dioxide which are easily obtainable source materials and can efficient produce over a long period. The present invention provides a useful hydrocarbon on production method including: a dry reforming step for generating a first gas containing carbon monoxide and hydrogen from a mixed gas containing a methane-containing hydrocarbon and carbon dioxide; a useful hydrocarbon generating step of generating a second gas containing a useful hydrocarbon from the carbon monoxide and the hydrogen in the first gas; and a recycling step of separating a carbon dioxide-containing gas from the second gas and supplying the carbon dioxide-containing gas to the dry reforming step.

Abstract: A catalyst structure for synthesis gas production is used to produce a synthesis gas that includes carbon monoxide and hydrogen. The structure includes a carrier with a porous structure that comprises a zeolite-type compound; first catalyst particles that contain at least one iron-group element selected from the group consisting of nickel, iron, and cobalt; and a second catalyst that contains at least one transition metal element with redox capacity. The carrier includes, inside thereof, mutually communicating passages; the first catalyst particles are present at least in the passages of the carrier; and the second catalyst is present at least in the interior or on an outer surface of the carrier.

Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

Abstract: A hydrodesulfurization catalyst supports one or more metals selected from elements in Group 6 of the Periodic table, one or more metals selected from elements in Group 9 or Group 10 of the same, phosphorus, and an organic acid on a composite oxide support having a specific content of both alumina and HY zeolite having a specific crystallite size. The catalyst includes 10% to 40% by mass of the Group 6 metal, 1% to 15% by mass of the Group 9 or Group 10 metal, and 1.5% to 8% by mass of phosphorus in terms of an oxide based on the catalyst. The catalyst includes 0.8% to 7% by mass of carbon derived from an organic acid and for 1 mole of the Group 9 or Group 10 element metal in terms of an element based on the catalyst, and includes 0.2 to 1.2 moles of the organic acid.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.