Abstract: There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Abstract: A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.

Abstract: An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst. The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.

Abstract: In a susceptor (10) having a wafer pocket (101) for receiving a wafer W at the time of vapor-phase growth, the wafer pocket has at least a first pocket portion (102) for loading an outer circumferential portion of the wafer and a second pocket portion (103) formed to be lower than the first pocket and having a smaller diameter than that of the first pocket portion, and a fluid passage (105) having one end (105a) opening on a vertical wall (103a) of said second pocket portion and the other end (105b) opening on a back surface (104) or a side surface (106) of the susceptor is formed.

Abstract: A catalyst for hydrotreating gas oil, which comprises an inorganic oxide support having provided thereon: at least one selected from metals in the Group 6 of the periodic table at from 10 to 30% by weight, at least one selected from metals in the Group 8 of the periodic table at from 1 to 15% by weight, phosphorus at from 1.5 to 6% by weight, and carbon at from 2 to 14% by weight, each in terms of a respective oxide amount based on the catalyst, wherein the catalyst has a specific surface area of from 220 to 300 m2/g, a pore volume of from 0.35 to 0.6 ml/g, and an average pore diameter of about from 65 to 95 ?; a process for producing the catalyst; and a method for hydrotreating gas oil, which comprises subjecting a gas oil fraction to a catalytic reaction in the presence of the catalyst under conditions at a hydrogen partial pressure of from 3 to 8 MPa, a temperature of from 300 to 420° C., and a liquid hourly space velocity of from 0.3 to 5 hr?1.

Abstract: There is provided a catalyst for hydrotreating a hydrocarbon oil, which comprises an inorganic oxide support containing a certain amount of phosphorus oxide having provided thereon: at least one selected from metals in the Group 6 of the periodic table, at least one selected from metals in the Group 8 of the periodic table, and carbon, and which has a certain specific surface area, pore volume, and mean pore diameter, a process for producing the same, and a method for hydrotreating a hydrocarbon oil using the same. Thereby, the catalyst can be produced in a simple and convenient manner and sulfur compounds in the hydrocarbon oil can be exceedingly highly desulfurized and simultaneously nitrogen compounds can be diminished without necessitating severe operating conditions.

Abstract: In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.

Abstract: An object of the present invention is to provide a hydrotreating catalyst capable of being produced by a simple method and capable of realizing ultra-deep desulfurization of sulfur components in gas oil without requiring severer operating conditions as well as capable of reducing nitrogen components simultaneously, to provide a process for producing the catalyst, and to provide a process for desulfurizing gas oil using the catalyst. The invention relates to a catalyst containing on an inorganic oxide support 10 to 40% by weight of a metal in the Group 6 of the periodic table, 1 to 15% by weight of a metal in the Group 8 of the periodic table, 1.5 to 8% by weight of phosphorus, each in terms of an oxide amount based on the catalyst, and 2 to 14% by weight of carbon in terms of an element amount based on the catalyst, wherein the catalyst has a specific surface area of 150 to 300 m2/g, a pore volume of 0.3 to 0.

Abstract: A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.

Abstract: A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

Abstract: A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block. The test elements can be efficiently formed on the substrate in view of the space on a display device substrate or the preference of characteristics to be evaluated. Moreover, characteristics of each test element can be conducted with a common probe regardless of the type of display device.

Abstract: A catalyst for hydrotreating gas oil, which comprises an inorganic oxide support having provided thereon: at least one selected from metals in the Group 6 of the periodic table at from 10 to 30% by weight, at least one selected from metals in the Group 8 of the periodic table at from 1 to 15% by weight, phosphorus at from 1.5 to 6% by weight, and carbon at from 2 to 14% by weight, each in terms of a respective oxide amount based on the catalyst, wherein the catalyst has a specific surface area of from 220 to 300 m2/g, a pore volume of from 0.35 to 0.6 ml/g, and an average pore diameter of about from 65 to 95 Å; a process for producing the catalyst; and a method for hydrotreating gas oil, which comprises subjecting a gas oil fraction to a catalytic reaction in the presence of the catalyst under conditions at a hydrogen partial pressure of from 3 to 8 MPa, a temperature of from 300 to 420° C., and a liquid hourly space velocity of from 0.3 to 5 hr−1.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.

Abstract: The method of the present invention of manufacturing a nozzle plate for an ink jet recording head comprises a first step of forming a layer of a resin comprising a benzene ring on a metal substrate, a second step of patterning the layer of the resin by means of excimer laser and partially exposing the metal substrate, a third step of forming a metal layer having a thickness smaller than that of the resin layer on the exposed surface of the metal substrate by electroforming, and a fourth step of separating the metal layer from the metal substrate and the resin layer.

Abstract: A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block.

Abstract: A method for manufacturing an ink jet recording head, which is provided with orifices for liquid discharge use, nozzles communicated with the orifices, electrothermal converting members arranged in the nozzles to form bubbles in the liquid by providing thermal energy for it, the liquid chamber communicated with the nozzles to supply liquid to the nozzles and a substrate having the electrothermal converting members provided therefor, comprises the steps of preparing the substrate to be a silicon substrate having (100) plane or (110) plane crystal axes therefor, forming organic resin layer at least in the liquid chamber on the silicon substrate, then, removing by means of anisotropic etching a part of the liquid chamber formation portion of the substrate from the reverse side of the formation surface of the organic resin layer and forming an elastic member portion formed by the membrane of the organic resin layer in the liquid chamber.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.

Abstract: The present invention has as an objective providing a silicon epi-wafer, and a manufacturing method therefor, which simplifies processing as much as possible in an attempt to lower the cost of an epi-wafer, and which is capable of manifesting a sufficient IG effect even in low-temperature device fabrication processing of under 1080° C. in an epi-wafer, and furthermore, in device processing, which enhances gettering capabilities for a variety of impurities in wafer device processing, without performing, following wafer slicing, any process from which an EG effect can be anticipated. As for the silicon single crystal, which is grown via the CZ method so as to make the oxygen concentration relatively high, and to intentionally make the carbon concentration high, outstanding gettering capabilities are manifested in the wafer itself, without performing EG processing.

Abstract: The objective of this invention is to provide a manufacturing method wherewith optimally low-COP substrates can be efficiently manufactured for epitaxial wafers in order to obtain high epitaxial surface quality that will not have an adverse effect on device characteristics. A phenomenon was discovered whereby COPs are eliminated by solution annealing or flattening when epitaxial films are formed on wafers wherein the density of grown-in defects (COPs) with a size of 0.130 &mgr;m or larger is 0.03 defects/cm2 or lower, the use of which phenomenon is characteristic of the invention.

Abstract: An active-matrix substrate includes: two kinds of lines arranged in a matrix on an insulating plate; switching elements each provided in the vicinity of an intersection of the two kinds of lines; an insulating film for flattening, covering an entire surface of the insulating plate so as to flatten the uneven surface of the insulating plate due to the presence of the lines and the switching elements; and pixel electrodes provided in a matrix on the insulating film for flattening. A concave portion for preventing a short-circuit from occurring between the pixel electrodes during a production process is formed in a region of the insulating film for flattening which corresponds to a gap between pixel electrodes which are adjacent to each other.