Patents by Inventor Takashi HAMOCHI

Takashi HAMOCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10453927
    Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: October 22, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Takashi Hamochi, Toshiyuki Miyamoto, Masafumi Nomura, Junichi Koezuka, Kenichi Okazaki
  • Publication number: 20190189466
    Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
    Type: Application
    Filed: February 8, 2019
    Publication date: June 20, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masami Jintyou, Junichi Koezuka, Takashi Hamochi, Yasuharu Hosaka
  • Publication number: 20190074382
    Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.
    Type: Application
    Filed: November 6, 2018
    Publication date: March 7, 2019
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA
  • Publication number: 20190067486
    Abstract: To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0×1021 molecules/cm3.
    Type: Application
    Filed: September 4, 2018
    Publication date: February 28, 2019
    Inventors: Shunpei YAMAZAKI, Toshinari SASAKI, Takashi HAMOCHI, Toshiyuki MIYAMOTO, Masafumi NOMURA, Junichi KOEZUKA, Kenichi OKAZAKI
  • Publication number: 20190051727
    Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Application
    Filed: October 5, 2018
    Publication date: February 14, 2019
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Toshimitsu Obonai, Yukinori Shima, Masami Jintyou, Daisuke Kurosaki, Takashi Hamochi, Junichi Koezuka, Kenichi Okazaki, Shunpei Yamazaki
  • Patent number: 10204798
    Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: February 12, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masami Jintyou, Junichi Koezuka, Takashi Hamochi, Yasuharu Hosaka
  • Patent number: 10205008
    Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: February 12, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Obonai, Hironobu Takahashi, Yasuharu Hosaka, Masahiro Watanabe, Takuya Handa, Yukinori Shima, Takashi Hamochi
  • Publication number: 20190035935
    Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
    Type: Application
    Filed: January 17, 2017
    Publication date: January 31, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasutaka NAKAZAWA, Junichi KOEZUKA, Takashi HAMOCHI
  • Publication number: 20190019894
    Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.
    Type: Application
    Filed: September 6, 2018
    Publication date: January 17, 2019
    Inventors: Kenichi Okazaki, Toshinari Sasaki, Shuhei Yokoyama, Takashi Hamochi
  • Patent number: 10170599
    Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: January 1, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Okazaki, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Shunpei Yamazaki, Toshinari Sasaki
  • Patent number: 10158008
    Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: December 18, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Masami Jintyou, Yukinori Shima, Yasuharu Hosaka, Yasutaka Nakazawa, Takashi Hamochi, Takahiro Sato, Shunpei Yamazaki
  • Patent number: 10141337
    Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: November 27, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Yoshinori Ieda, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki, Mitsuhiro Ichijo, Toshiya Endo
  • Patent number: 10134852
    Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: November 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Takashi Hamochi, Toshiyuki Miyamoto, Masafumi Nomura, Junichi Koezuka, Kenichi Okazaki
  • Patent number: 10128378
    Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: November 13, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa
  • Patent number: 10096684
    Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: October 9, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Toshimitsu Obonai, Yukinori Shima, Masami Jintyou, Daisuke Kurosaki, Takashi Hamochi, Junichi Koezuka, Kenichi Okazaki, Shunpei Yamazaki
  • Patent number: 10096719
    Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: October 9, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Okazaki, Toshinari Sasaki, Shuhei Yokoyama, Takashi Hamochi
  • Publication number: 20180182870
    Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.
    Type: Application
    Filed: December 19, 2017
    Publication date: June 28, 2018
    Inventors: Yasuharu HOSAKA, Takahiro IGUCHI, Masami JINTYOU, Takashi HAMOCHI, Junichi KOEZUKA
  • Patent number: 9991392
    Abstract: To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: June 5, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Yukinori Shima, Masami Jintyou, Takashi Hamochi, Satoshi Higano, Shunpei Yamazaki
  • Publication number: 20180145138
    Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
    Type: Application
    Filed: January 18, 2018
    Publication date: May 24, 2018
    Inventors: Toshinari SASAKI, Takashi HAMOCHI, Toshiyuki MIYAMOTO, Masafumi NOMURA, Junichi KOEZUKA, Kenichi OKAZAKI
  • Patent number: 9966475
    Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: May 8, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki