Patents by Inventor Takashi HAMOCHI

Takashi HAMOCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200365739
    Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.
    Type: Application
    Filed: August 6, 2020
    Publication date: November 19, 2020
    Inventors: Kenichi OKAZAKI, Toshinari SASAKI, Shuhei YOKOYAMA, Takashi HAMOCHI
  • Patent number: 10818795
    Abstract: A semiconductor device comprising a pixel portion comprising a capacitor and a transistor is provided. The capacitor comprises a first oxide semiconductor film and a transparent conductive material. The transistor comprises a second oxide semiconductor film, a source electrode, and a drain electrode. The transistor is electrically connected to the capacitor. The capacitor is provided to overlap with a first opening portion in an insulating film and a second opening portion in an organic resin film. The transparent conductive material comprises a region over the organic resin film. The second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region. Each of a carrier density of the first oxide semiconductor film and a carrier density of the first region is higher than a carrier density of the channel formation region.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: October 27, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Masami Jintyou, Yukinori Shima, Takashi Hamochi, Yasutaka Nakazawa
  • Publication number: 20200335609
    Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device is fabricated by a method that includes a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a conductive film over the semiconductor layer, a third step of etching the conductive film such that the conductive film is divided over the semiconductor layer and a portion of the semiconductor layer is uncovered, and a fourth step of performing first treatment on the conductive film and the portion of the semiconductor layer. The conductive film contains copper, silver, gold, or aluminum. The first treatment is plasma treatment in an atmosphere containing a mixed gas of a first gas containing an oxygen element and a second gas containing a hydrogen element.
    Type: Application
    Filed: January 11, 2019
    Publication date: October 22, 2020
    Inventors: Yasutaka NAKAZAWA, Takashi HAMOCHI, Takayuki OHIDE, Kenichi OKAZAKI
  • Publication number: 20200321454
    Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.
    Type: Application
    Filed: June 18, 2020
    Publication date: October 8, 2020
    Inventors: Yasuharu HOSAKA, Takahiro IGUCHI, Masami JINTYOU, Takashi HAMOCHI, Junichi KOEZUKA
  • Publication number: 20200295195
    Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasutaka NAKAZAWA, Junichi KOEZUKA, Takashi HAMOCHI
  • Patent number: 10770310
    Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: September 8, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Yukinori Shima, Masahiko Hayakawa, Takashi Hamochi, Suzunosuke Hiraishi
  • Patent number: 10741694
    Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: August 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Okazaki, Toshinari Sasaki, Shuhei Yokoyama, Takashi Hamochi
  • Patent number: 10741414
    Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: August 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Yukinori Shima, Masahiko Hayakawa, Takashi Hamochi, Suzunosuke Hiraishi
  • Patent number: 10734529
    Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: August 4, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasutaka Nakazawa, Junichi Koezuka, Takashi Hamochi
  • Patent number: 10692994
    Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: June 23, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Takahiro Iguchi, Masami Jintyou, Takashi Hamochi, Junichi Koezuka
  • Publication number: 20200185233
    Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
    Type: Application
    Filed: February 11, 2020
    Publication date: June 11, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masami JINTYOU, Junichi KOEZUKA, Takashi HAMOCHI, Yasuharu HOSAKA
  • Publication number: 20200161435
    Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Application
    Filed: January 10, 2020
    Publication date: May 21, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Toshimitsu OBONAI, Yukinori SHIMA, Masami JINTYOU, Daisuke KUROSAKI, Takashi HAMOCHI, Junichi KOEZUKA, Kenichi OKAZAKI, Shunpei YAMAZAKI
  • Patent number: 10580662
    Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: March 3, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masami Jintyou, Junichi Koezuka, Takashi Hamochi, Yasuharu Hosaka
  • Patent number: 10546759
    Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
    Type: Grant
    Filed: May 2, 2017
    Date of Patent: January 28, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Yukinori Shima, Masahiko Hayakawa, Takashi Hamochi, Suzunosuke Hiraishi
  • Publication number: 20200020810
    Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.
    Type: Application
    Filed: September 25, 2019
    Publication date: January 16, 2020
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA
  • Patent number: 10535742
    Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: January 14, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Toshimitsu Obonai, Yukinori Shima, Masami Jintyou, Daisuke Kurosaki, Takashi Hamochi, Junichi Koezuka, Kenichi Okazaki, Shunpei Yamazaki
  • Publication number: 20190355591
    Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.
    Type: Application
    Filed: July 29, 2019
    Publication date: November 21, 2019
    Inventors: Shunpei YAMAZAKI, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Yukinori SHIMA, Masahiko HAYAKAWA, Takashi HAMOCHI, Suzunosuke HIRAISHI
  • Patent number: 10453927
    Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: October 22, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Takashi Hamochi, Toshiyuki Miyamoto, Masafumi Nomura, Junichi Koezuka, Kenichi Okazaki
  • Publication number: 20190189466
    Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.
    Type: Application
    Filed: February 8, 2019
    Publication date: June 20, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masami Jintyou, Junichi Koezuka, Takashi Hamochi, Yasuharu Hosaka
  • Publication number: 20190074382
    Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.
    Type: Application
    Filed: November 6, 2018
    Publication date: March 7, 2019
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA, Takashi HAMOCHI, Yasutaka NAKAZAWA