Abstract: An evaluation apparatus according to the present disclosure includes at least one memory storing a set of instructions, and at least one processor configured to execute the set of instructions and thereby to acquire, from a sensor, time-space data on vibrations that have occurred in an overhead optical fiber strung between poles, and evaluate, for each of predetermined analysis sections, a wind velocity and a propagation speed of wind in the analysis section based on the time-space data, and evaluate a wind direction in the analysis section based on the evaluated wind velocity and the propagation speed of the wind.

Abstract: A signal processing apparatus according to the present disclosure includes: at least one memory configured to store instructions; and at least one processor configured to execute the instructions to: acquire signals measured by a signal measurement apparatus at a plurality of points located along an optical fiber; and determine whether there is an event based on a degree of similarity between the signals measured at points adjacent points.

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: An apparatus includes memory and processor configured to: input, from a sensor, a signal indicating a characteristic vibration occurring at each position of an optical fiber, and estimate, based on the input signal, an aerial section in which the optical fiber being aerially laid over a pole is present; calculate, based on the input signal, sensing data indicating a vibration characteristic of each position of the optical fiber being present in the aerial section, and calculate a difference degree of the sensing data between two neighboring points of the optical fiber; and temporally integrate the difference degree, calculate a time average of the difference degree, estimate, based on a time average value of the difference degree, a position of the pole and a position of an extra length section of the optical fiber, and output an estimation result of positions of the pole and the extra length section.

Abstract: The combine may include a threshing tank that is configured to store a threshing product obtained by the threshing device and includes a lower tapered portion formed in a bottom portion. A bottom screw is provided inside the lower tapered portion and configured to discharge the threshing product from the threshing tank. A threshing discharge device is connected to the bottom screw and configured to convey the threshing product from the bottom screw and discharge the threshing product in a body outward direction. The threshing tank includes an inspection port formed in a bottom section of the lower tapered portion, and a lid configured to open and close the inspection port, and the lid opens and closes by swinging upward and downward about a swing axis that is not parallel with a screw axis of the bottom screw.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the element, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein these layers are laminated in this order at least in a range in which the at least one inner chamber is provided in the element base, the outer is in contact with the inner layer in a range in which the at least one inner chamber is not provided, and a difference of porosity between the inner layer and the outer layer is 10% to 50%.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer, at least a part of which has contact with the inner layer, and having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the sensor element, having contact with the intermediate and the inner layer, having contact with a leading end surface of the element base or the intermediate layer on the leading end surface, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein a difference of porosity between the inner and the outer layer is 10% to 50%.

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 ?m or less.

Abstract: A sensor element for a gas sensor includes: an element base being a ceramic structure including a sensing part to sense a gas component to be measured; and a leading-end protective layer being a porous layer to surround a predetermined range from a leading end portion on a side of the sensing part of the element base. The leading-end protective layer protrudes at a first end portion thereof opposite to a portion surrounding the element base in a longitudinal direction of the element base. A/B?1.1 where A is maximum thickness of the leading-end protective layer, and B is thickness of the leading-end protective layer in a base portion that does not protrude.

Abstract: A sensor element includes an element base made of an oxygen-ion conductive solid electrolyte, an internal space provided inside the element base, an electrochemical pump cell that pumps oxygen in and out between the internal space and outside, and a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive. A thermal diffusion time at a leading end part of the thermal shock resistant layer covering the gas inlet at a farthest leading end position at the one end part is longest, and a thermal diffusion time at a pump surface is longer than a thermal diffusion time at a heater surface.

Abstract: A sensor element includes: an element base made of an oxygen-ion conductive solid electrolyte; an internal space provided inside the element base; an electrochemical pump cell configured to pump oxygen in and out between the internal space and outside; a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided; and a buffer layer adjacent to the thermal shock resistant layer on a pump surface and a heater surface. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive, and a total thermal diffusion time in a stacking direction of the thermal shock resistant layer and the buffer layer is 0.2 sec to 1.0 sec inclusive.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: A sensor element includes: an element base including: a ceramic body made of an oxygen-ion conductive solid electrolyte, and having an inlet at one end portion thereof; at least one internal chamber located inside the ceramic body, and communicating with the gas inlet; and an electrochemical pump cell including an outer electrode, an inner electrode facing the chamber, and a solid electrolyte therebetween, and a porous leading-end protective layer covering a leading end surface and four side surfaces in a predetermined range of the element base on the one end portion, wherein the protective layer has an extension extending into the gas inlet and fixed to an inner wall surface of the ceramic body demarcating the gas inlet, and a gap communicating with the gas inlet is located in the protective layer, with demarcated by a portion of the protective layer continuous with the extension.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 ?m or more and 0.1 ?m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 ?m or more and 48 ?m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Abstract: A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio ?22/?11 of a compressive stress ?11 to occur across a surface of the film to be exposed to plasma and a compressive stress ?22 to occur across the surface in a direction perpendicular to the compressive stress ?11 is 5 or less. A plasma processing apparatus includes the above component.

Abstract: A sensor element includes: an element base including: a ceramic body made of an oxygen-ion conductive solid electrolyte, and having a gas inlet at one end portion thereof; at least one internal chamber located inside the ceramic body, and communicating with the gas inlet under predetermined diffusion resistance; an electrochemical pump cell including an electrode located on an outer surface of the ceramic body, an electrode facing the chamber, and a solid electrolyte located therebetween; and a heater buried in the ceramic body, and an leading-end protective layer being porous, and covering a leading end surface and four side surfaces in a predetermined range of the element base on the one end portion. The leading-end protective layer has an extension extending into the gas inlet, and fixed to an inner wall surface of the ceramic body demarcating the gas inlet.

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: A gas sensor element includes: an element base being a ceramic structure including a sensing part; and a leading-end protective layer being a porous layer disposed around an outer periphery of the element base in a predetermined range on a side of the sensing part. The leading-end protective layer includes: a first layer disposed at least on two main surfaces of the element base; a second layer disposed to cover the end portion and four side surfaces of the element base including the two main surfaces; and a third layer disposed to cover the second layer. The second layer has a porosity of 30% to 80%, and has a thickness of 30 to 50 times thickness of the first layer, and the third layer has a porosity of 15% to 30%, and has a thickness of 5 to 10 times the thickness of the first layer.

Abstract: Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.