Abstract: An event recognition apparatus is configured to acquire an observation signal indicating sound or vibration that occurs at a point along an optical fiber and is detected by optical fiber sensing, also acquire a noise signal indicating optical noise present at a point along the optical fiber, and by using statistical information of a sound signal or a vibration signal acquired by a sound sensor or a vibration sensor, derive, from each of the observation signal and the noise signal, a posterior probability that at least one event occurs at a point along the optical fiber, and compare a posterior probability derived from the observation signal with a posterior probability derived from the noise signal, derive, from a result of the comparison, a posterior probability that the at least one event occurs at a point along the optical fiber, and output a result of the derivation.

Abstract: A sensor element includes: an element base including a gas distribution part communicating from a gas inlet; and a leading-end protective layer including an inner layer covering an end portion and four side surfaces of the element base and an outer layer covering the inner layer and having a lower porosity than the inner layer, and a total thickness representative value, defined as an average of total thicknesses of the protective layer at a plurality of positions including a starting point, an intermediate position, and an innermost end of the gas distribution part, is 250 ?m or more, and a film thickness variation degree, defined as a ratio of a difference between a maximum value and a minimum value of the total thicknesses with respect to the total thickness representative value when the value is based at 100, is 20 or less.

Abstract: Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the element, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein these layers are laminated in this order at least in a range in which the at least one inner chamber is provided in the element base, the outer is in contact with the inner layer in a range in which the at least one inner chamber is not provided, and a difference of porosity between the inner layer and the outer layer is 10% to 50%.

Abstract: A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer, at least a part of which has contact with the inner layer, and having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the sensor element, having contact with the intermediate and the inner layer, having contact with a leading end surface of the element base or the intermediate layer on the leading end surface, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein a difference of porosity between the inner and the outer layer is 10% to 50%.

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A?B1?1.2A, 0.8A?B2?1.2A, and 0.8A?B3?1.2A.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 ?m or less.

Abstract: A sensor element for a gas sensor includes: an element base being a ceramic structure including a sensing part to sense a gas component to be measured; and a leading-end protective layer being a porous layer to surround a predetermined range from a leading end portion on a side of the sensing part of the element base. The leading-end protective layer protrudes at a first end portion thereof opposite to a portion surrounding the element base in a longitudinal direction of the element base. A/B?1.1 where A is maximum thickness of the leading-end protective layer, and B is thickness of the leading-end protective layer in a base portion that does not protrude.

Abstract: A sensor element includes: an element base made of an oxygen-ion conductive solid electrolyte; an internal space provided inside the element base; an electrochemical pump cell configured to pump oxygen in and out between the internal space and outside; a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided; and a buffer layer adjacent to the thermal shock resistant layer on a pump surface and a heater surface. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive, and a total thermal diffusion time in a stacking direction of the thermal shock resistant layer and the buffer layer is 0.2 sec to 1.0 sec inclusive.

Abstract: A sensor element includes an element base made of an oxygen-ion conductive solid electrolyte, an internal space provided inside the element base, an electrochemical pump cell that pumps oxygen in and out between the internal space and outside, and a porous thermal shock resistant layer provided to an outermost peripheral part in a predetermined range at one end part of the element base, at which a gas inlet is provided. A thermal diffusion time in a thickness direction of the thermal shock resistant layer is 0.4 sec to 1.0 sec inclusive. A thermal diffusion time at a leading end part of the thermal shock resistant layer covering the gas inlet at a farthest leading end position at the one end part is longest, and a thermal diffusion time at a pump surface is longer than a thermal diffusion time at a heater surface.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: A sensor element includes: an element base including: a ceramic body made of an oxygen-ion conductive solid electrolyte, and having an inlet at one end portion thereof; at least one internal chamber located inside the ceramic body, and communicating with the gas inlet; and an electrochemical pump cell including an outer electrode, an inner electrode facing the chamber, and a solid electrolyte therebetween, and a porous leading-end protective layer covering a leading end surface and four side surfaces in a predetermined range of the element base on the one end portion, wherein the protective layer has an extension extending into the gas inlet and fixed to an inner wall surface of the ceramic body demarcating the gas inlet, and a gap communicating with the gas inlet is located in the protective layer, with demarcated by a portion of the protective layer continuous with the extension.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 ?m or more and 0.1 ?m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 ?m or more and 48 ?m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Abstract: A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio ?22/?11 of a compressive stress ?11 to occur across a surface of the film to be exposed to plasma and a compressive stress ?22 to occur across the surface in a direction perpendicular to the compressive stress ?11 is 5 or less. A plasma processing apparatus includes the above component.

Abstract: A sensor element includes: an element base including: a ceramic body made of an oxygen-ion conductive solid electrolyte, and having a gas inlet at one end portion thereof; at least one internal chamber located inside the ceramic body, and communicating with the gas inlet under predetermined diffusion resistance; an electrochemical pump cell including an electrode located on an outer surface of the ceramic body, an electrode facing the chamber, and a solid electrolyte located therebetween; and a heater buried in the ceramic body, and an leading-end protective layer being porous, and covering a leading end surface and four side surfaces in a predetermined range of the element base on the one end portion. The leading-end protective layer has an extension extending into the gas inlet, and fixed to an inner wall surface of the ceramic body demarcating the gas inlet.

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Abstract: A gas sensor element includes: an element base being a ceramic structure including a sensing part; and a leading-end protective layer being a porous layer disposed around an outer periphery of the element base in a predetermined range on a side of the sensing part. The leading-end protective layer includes: a first layer disposed at least on two main surfaces of the element base; a second layer disposed to cover the end portion and four side surfaces of the element base including the two main surfaces; and a third layer disposed to cover the second layer. The second layer has a porosity of 30% to 80%, and has a thickness of 30 to 50 times thickness of the first layer, and the third layer has a porosity of 15% to 30%, and has a thickness of 5 to 10 times the thickness of the first layer.

Abstract: Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Abstract: A sensor element includes a porous leading-end protective layer disposed around an outer periphery of an element base in a predetermined range from an end portion on a side where a sensing part is disposed, wherein the protective layer includes: a first layer disposed on two main surfaces of the element base; a second layer disposed to cover the end portion and four side surfaces of the element base including the two main surfaces on which the first layer is disposed; and a third layer disposed to cover the second layer, and having a lower porosity than the second layer, the first layer has a porosity of 40% or more, and L1?L2 and L1?L3 where L1, L2, and L3 are extension lengths of the first layer, the second layer, and the third layer, respectively, from an end surface of the element base in a longitudinal direction of the element base.